Professional Documents
Culture Documents
Lecture 2
Lecture 2
September 5, 2002
Contents:
Reading assignment:
Announcement:
Key questions
energy
conduction band
Ec Ec
bandgap Eg
Ev ↓ Ev ↓
valence band
space coordinate
+
-
+
a) b) c)
6.720J/3.43J - Integrated Microelectronic Devices - Fall 2002 Lecture 2-4
-
-
- -
Ec
electron energy
hole energy
Ev
+
+ +
- -
electron energy
Ec
hυ = Eg hυ > Eg
Ev
+ +
hυ > Eg
a) b)
6.720J/3.43J - Integrated Microelectronic Devices - Fall 2002 Lecture 2-5
2. Intrinsic semiconductor
Answer requires fairly elaborate model [lecture 3], but key dependen-
cies can be readily identified.
Define:
no = po = ni
Key dependencies of ni :
• Temperature:
T ↑⇒ ni
• Bandgap:
Eg ↑⇒ ni
) e− + h+
bond *
) H + + OH −
H2O *
[H + ][OH − ] E
K= ∼ exp(− )
[H2O] kT
nopo Eg
K= ∼ exp(− )
[bonds] kT
[bonds] no, po
and
Then:
Eg
nopo ∼ exp(− )
kT
• First,
Eg
ni ∼ exp(− )
2kT
As expected: T ↑⇒ ni ↑
Eg ↑⇒ ni ↓
300 K
1E+15
1E+10
1E+05
ni (cm-3)
1E+00
1E-05
1E-10 0.612 eV
1E-15
1E-20
30 50 70 90 110 130 150
-1
1/kT (eV )
nopo = n2i
3. Extrinsic semiconductor
- -
+
+
-
Ed
Ec
ED
Ea
Ev EA
ND+ ' ND
NA− ' NA
2 n-type semiconductor
no ' ND
n2i
po '
ND
log no
intrinsic regime
full ionization
ND
carrier
freeze-out
-Eg/2
1/kT
2 p-type semiconductor
po ' NA
n2i
no '
NA
6.720J/3.43J - Integrated Microelectronic Devices - Fall 2002 Lecture 2-14
5E+22
4E+22
DOS (cm eV )
-1
-3
3E+22
2E+22
1E+22
0E+00
-5 -4 -3 -2 -1 0 1 2 3 4 5 6
E-Ev (eV)
Close to edges:
√
gc(E) ∝ E − Ec E ≥ Ec
√
gv (E) ∝ Ev − E E ≤ Ev
g(E) ∧
gv(E)
gc(E)
0 >
Ev Ec E
6.720J/3.43J - Integrated Microelectronic Devices - Fall 2002 Lecture 2-15
2m∗de 3/2 √
gc(E) = 4π E − Ec E ≥ Ec
h2
2m∗dh 3/2 √
gv (E) = 4π Ev − E E ≤ Ev
h2
Three comments:
Key conclusions
nopo = n2i
• Equilibrium carrier concentrations can be engineered through
shallow dopants ⇒ extrinsic semiconductor.
– n-type semiconductor:
n2i
no ' ND , po '
ND
– p-type semiconductor:
n2i
po ' NA , no '
NA
• Around edges, conduction
√ and valence bands in semiconductors
feature DOS ∼ E.
• Order of magnitude of key parameters for Si at 300 K:
– intrinsic carrier concentration: ni ∼ 1010 cm−3
– typical doping level range: ND , NA ∼ 1015 − 1020 cm−3
6.720J/3.43J - Integrated Microelectronic Devices - Fall 2002 Lecture 2-17
Self study
• Charge neutrality