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Data Sheet
Data Sheet
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
BST72A in SOT54 (TO-92 variant).
2. Features
■ TrenchMOS™ technology
■ Very fast switching
■ Logic level compatible.
3. Applications
■ Relay driver
■ High speed line driver
c
■ Logic level translator.
c
4. Pinning information
Table 1: Pinning - SOT54, simplified outline and symbol
Pin Description Simplified outline Symbol
1 source (s)
d
2 gate (g)
3 drain (d)
g
03ab40
3 21 03ab30
s
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) Tj = 25 to 150 °C − 100 V
VDGR drain-gate voltage (DC) Tj = 25 to 150 °C; RGS = 20 kΩ − 100 V
VGS gate-source voltage (DC) − ±20 V
ID drain current (DC) Tamb = 25 °C; VGS = 5 V; − 190 mA
Figure 2 and 3
Tamb = 100 °C; VGS = 5 V; Figure 2 − 120 mA
IDM peak drain current Tamb = 25 °C; pulsed; tp ≤ 10 µs; − 0.8 A
Figure 3
Ptot total power dissipation Tamb = 25 °C; Figure 1 − 0.83 W
Tstg storage temperature −65 +150 °C
Tj operating junction temperature −65 +150 °C
Source-drain diode
IS source (diode forward) current (DC) Tamb = 25 °C − 190 mA
ISM peak source (diode forward) current Tamb = 25 °C; pulsed; tp ≤ 10 µs − 0.8 A
9397 750 07296 © Philips Electronics N.V. 2000. All rights reserved.
03aa11
120 03aa19
120
Pder 100 I
der 100
(%) (%)
80
80
60
60
40
40
20 20
0 0
0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175
o o
Tamb ( C) Tamb ( C)
P tot VGS ≥ 5 V
P der = ---------------------- × 100%
P °
ID
tot ( 25 C ) I der = ------------------- × 100%
I °
D ( 25 C )
Fig 1. Normalized total power dissipation as a Fig 2. Normalized continuous drain current as a
function of ambient temperature. function of ambient temperature.
03aa62
1
tp = 10 µs
RDSon = VDS/ ID
ID
(A)
100 µs
1 ms
10-1
10 ms
100 ms
D.C.
tp
10-2
P δ=
T
tp t
Ta = 25oC
T
10-3
1 10 102 VDS (V) 103
9397 750 07296 © Philips Electronics N.V. 2000. All rights reserved.
7. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter Conditions Value Unit
Rth(j-a) thermal resistance from junction to ambient vertical in still air; lead 150 K/W
length ≤ 5 mm; Figure 4
03aa59
103
Zth(j-a)
(K/W)
102 δ = 0.5
0.2
0.1
10
0.05
0.02 tp
P δ=
T
single pulse
1
tp t
T
10-1
10-5 10-4 10-3 10-2 10-1 1 10 102
tp (s)
9397 750 07296 © Philips Electronics N.V. 2000. All rights reserved.
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source breakdown ID = 10 µA; VGS = 0 V
voltage Tj = 25 °C 100 130 − V
Tj = −55 °C 89 − − V
VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS;
Figure 9
Tj = 25 °C 1 2 − V
Tj = 150 °C 0.6 − − V
Tj = −55 °C − − 3.5 V
IDSS drain-source leakage current VDS = 60 V; VGS = 0 V
Tj = 25 °C − 0.01 1.0 µA
Tj = 150 °C − − 10 µA
IGSS gate-source leakage current VGS = ±20 V; VDS = 0 V − 10 100 nA
RDSon drain-source on-state VGS = 5 V; ID = 150 mA;
resistance Figure 7 and 8
Tj = 25 °C − 5 10 Ω
Tj = 150 °C − − 23 Ω
Dynamic characteristics
gfs forward transconductance VDS = 5 V; ID = 175 mA; − 350 − mS
Figure 11
Ciss input capacitance VGS = 0 V; VDS = 10 V; − 25 40 pF
Coss output capacitance f = 1 MHz; Figure 12 − 8.5 15 pF
Crss reverse transfer capacitance − 5 10 pF
ton turn-on time VDD = 50 V; RD = 250 Ω; − 3 10 ns
toff turn-off time VGS = 10 V; RG = 50 Ω; − 12 15 ns
RGS = 50 Ω
Source-drain diode
VSD source-drain (diode forward) IS = 300 mA; VGS = 0 V; − 0.95 1.5 V
voltage Figure 13
trr reverse recovery time IS = 300 mA; − 30 − ns
Qr recovered charge dIS/dt = −100 A/µs; − 30 − nC
VGS = 0 V; VDS = 25 V
9397 750 07296 © Philips Electronics N.V. 2000. All rights reserved.
03aa63 03aa65
0.5 0.7
ID Tj = 25oC VGS = 10V ID
(A) 0.45 (A) VDS > ID X RDSon
0.6
0.4 5V
0.35 0.5
0.3 Tj = 25oC
0.4
4V
0.25 150oC
0.3
0.2
3.5 V
0.15 0.2
0.1
3V 0.1
0.05
0 0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 1 2 3 4 5 6 7 8
VDS (V) VGS (V)
03aa29
03aa64
12 3
Tj = 25oC a 2.8
RDSon 11 3V 3.5V
(Ω) 2.6
10 2.4
9 4V 2.2
8 2
1.8
7
1.6
6 5V 1.4
5 1.2
4 1
VGS = 10V 0.8
3
0.6
2 0.4
1 0.2
0 0
0 0.1 0.2 0.3 0.4 0.5 -60 -20 20 60 100 140 180
ID (A) Tj (oC)
Tj = 25 °C R DSon
a = ---------------------------
-
R DSon ( 25 °C )
Fig 7. Drain-source on-state resistance as a function Fig 8. Normalized drain-source on-state resistance
of drain current; typical values. factor as a function of junction temperature.
9397 750 07296 © Philips Electronics N.V. 2000. All rights reserved.
03aa34
3 03aa37
10-1
VGS(th) I
D
(V) 2.5 (A)
10-2
typ
2
min typ
10-3
1.5
min 10-4
1
10-5
0.5
0 10-6
-60 -20 20 60 100 140 180 0 0.5 1 1.5 2 2.5 3
Tj (oC) VGS (V)
03aa66
0.5 03aa68
gfs 102
(S) 0.45 VDS > ID X RDSon
Ciss, Coss,
0.4 Tj = 25oC Crss (pF)
Ciss
0.35
0.3
0.25
150oC 10
Coss
0.2
0.15
0.1
0.05
Crss
0
1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
10-1 1 10 102
ID (A) VDS (V)
9397 750 07296 © Philips Electronics N.V. 2000. All rights reserved.
03aa67
1
IS
(A) 0.9 VGS = 0 V
0.8
0.7
0.6 150oC
0.5
0.4
Tj = 25oC
0.3
0.2
0.1
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD (V)
9397 750 07296 © Philips Electronics N.V. 2000. All rights reserved.
9. Package outline
Plastic single-ended leaded (through hole) package; 3 leads SOT54
d A L
1
e1
2
D e
b1
L1
0 2.5 5 mm
scale
UNIT A b b1 c D d E e e1 L L1(1)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
9397 750 07296 © Philips Electronics N.V. 2000. All rights reserved.
9397 750 07296 © Philips Electronics N.V. 2000. All rights reserved.
[1] Please consult the most recently issued data sheet before initiating or completing a design.
9397 750 07296 © Philips Electronics N.V. 2000 All rights reserved.
For all other countries apply to: Philips Semiconductors, Internet: http://www.semiconductors.philips.com
Marketing Communications,
Building BE, P.O. Box 218, 5600 MD EINDHOVEN,
The Netherlands, Fax. +31 40 272 4825 (SCA70)
9397 750 07296 © Philips Electronics N.V. 2000. All rights reserved.
Contents
1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
4 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
5 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
6 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
7 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
7.1 Transient thermal impedance . . . . . . . . . . . . . . 4
8 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11