PD - 9.

1383A

IRFP064N
HEXFET® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance D
VDSS = 55V
l Dynamic dv/dt Rating
l 175°C Operating Temperature
RDS(on) = 0.008Ω
l Fast Switching
G
l Fully Avalanche Rated
ID = 110A†
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.

The TO-247 package is preferred for commercial-industrial

applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the TO-247AC
earlier TO-218 package because of its isolated mounting
hole.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 110†
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 80† A
IDM Pulsed Drain Current … 390
PD @TC = 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy‚… 480 mJ
IAR Avalanche Current 59 A
EAR Repetitive Avalanche Energy 20 mJ
dv/dt Peak Diode Recovery dv/dt ƒ… 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.75
RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
RθJA Junction-to-Ambient ––– 40

8/25/97
IRFP064N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆T J Breakdown Voltage Temp. Coefficient ––– 0.057 ––– V/°C Reference to 25°C, ID = 1mA…
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.008 Ω VGS = 10V, ID = 59A „
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS , ID = 250µA
gfs Forward Transconductance 42 ––– ––– S V DS = 25V, I D = 59A…
––– ––– 25 VDS = 55V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 V GS = 20V
I GSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Qg Total Gate Charge ––– ––– 170 ID = 59A
Q gs Gate-to-Source Charge ––– ––– 32 nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 74 VGS = 10V, See Fig. 6 and 13 „…
t d(on) Turn-On Delay Time ––– 14 ––– VDD = 28V
tr Rise Time ––– 100 ––– I D = 59A
ns
t d(off) Turn-Off Delay Time ––– 43 ––– RG = 2.5Ω
tf Fall Time ––– 70 ––– RD = 0.39Ω, See Fig. 10„…
Between lead, D
LD Internal Drain Inductance ––– 5.0 –––
6mm (0.25in.)
nH G
from package
LS Internal Source Inductance ––– 13 –––
and center of die contact S

Ciss Input Capacitance ––– 4000 ––– VGS = 0V

Coss Output Capacitance ––– 1300 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 480 ––– ƒ = 1.0MHz, See Fig. 5…

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
D
IS Continuous Source Current MOSFET symbol
––– ––– 110†
(Body Diode) showing the
ISM Pulsed Source Current integral reverse G

––– ––– 390

(Body Diode)  p-n junction diode. S

VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 59A, VGS = 0V „
t rr Reverse Recovery Time ––– 110 170 ns TJ = 25°C, IF = 59A
Q rr Reverse Recovery Charge ––– 450 680 nC di/dt = 100A/µs „…

Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ VDD = 25V, starting TJ = 25°C, L = 190µH
RG = 25Ω, IAS = 59A. (See Figure 12)
ƒ I SD ≤ 59A, di/dt ≤ 290A/µs, VDD ≤ V(BR)DSS ,
TJ ≤ 175°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… Uses IRF3205 data and test conditions
† Caculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4
 IRFP064N
1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V
7.0V 7.0V
I , D ra in -to -S o u rce C u rre n t (A )

I , D ra in -to -S o u rc e C u rre n t (A )
6.0V 6.0V
5.5V 5.5V
5.0V 5.0V
BOTT OM 4.5V BOTT OM 4.5V

100 100

4.5V
D

D
4.5 V
2 0µ s PU LSE W ID TH 20 µs P UL SE W IDTH
TC = 2 5°C TC = 17 5°C
10 A 10 A
0.1 1 10 100 0.1 1 10 100
V D S , D rain-to-S ource V oltage (V ) V D S , Drain-to-Source V oltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 2.0
I D = 98 A
R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce
I D , D r ain- to-S ourc e C urre nt (A )

TJ = 2 5 °C
1.5
TJ = 1 7 5 ° C
100
(N o rm a li ze d )

1.0

10

0.5

V DS = 2 5 V
2 0 µ s P U L SE W ID TH V G S = 10 V
1 0.0
A A
4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
V G S , Ga te-to-S o urce V oltage (V ) T J , Junction T emperature (°C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
IRFP064N
8000 20
V GS = 0V, f = 1 MH z I D = 5 9A
C iss = C gs + C gd , C ds SH O R TED V DS = 44 V

V G S , G a te -to -S o u rc e V o lta g e (V )
7000 C rss = C gd
V DS = 28 V
C oss = C ds + C gd 16
V DS = 11 V
6000
C i ss
C , C a p a c ita n c e (p F )

5000 12

4000 C os s

8
3000

2000
C rs s 4

1000
FO R TES T C IR CU IT
SEE FIG U R E 13
0 A 0 A
1 10 100 0 30 60 90 120 150 180

V D S , Drain-to-Source V oltage (V) Q G , Total Gate Charge (nC )

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000 1000
O PER ATION IN TH IS AR EA LIM ITE D
BY R D S(o n)
IS D , R e ve rs e D ra in C u rre n t (A )

10µs
I D , D ra in C u rre n t (A )

100
1 00µs
TJ = 175 °C
100

1m s

10
T J = 2 5°C
10m s

T C = 25 °C
T J = 17 5°C
VG S = 0 V S ing le Pulse
10 A 1 A
0.6 1.0 1.4 1.8 2.2 2.6 3.0 1 10 100
V S D , Source-to-D rain V oltage (V ) V D S , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
 IRFP064N
RD
VDS
120
LIMITED BY PACKAGE VGS
D.U.T.
100 RG
+
- VDD
ID , Drain Current (A)

80 10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
60

Fig 10a. Switching Time Test Circuit

40
VDS
90%
20

0
25 50 75 100 125 150 175
10%
TC , Case Temperature ( ° C)
VGS
td(on) tr t d(off) tf

Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms
Case Temperature

1
Thermal Response (Z thJC )

D = 0.50

0.20

0.1 0.10

PDM
0.05
t1
0.02 t2
SINGLE PULSE
0.01 (THERMAL RESPONSE)
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + T C
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRFP064N

L
VDS 1200
ID

E A S , S in g le P u ls e A va la n c h e E n e rg y (m J)
D.U.T. TO P 24 A
4 2A
RG 1000
+ B OTTO M 59 A
VDD
-
800
10 V IAS
tp
0.01Ω
600

Fig 12a. Unclamped Inductive Test Circuit

400
V(BR)DSS
tp 200

VDD
VD D = 2 5V
0 A
25 50 75 100 125 150 175
VDS Starting T J , Junction Temperature (°C)

Fig 12c. Maximum Avalanche Energy

IAS Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

50KΩ

12V .2µF
QG .3µF

10 V +
V
D.U.T. - DS
QGS QGD
VGS
VG 3mA

IG ID
Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
 IRFP064N

Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T
• Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-


RG • dv/dt controlled by RG +
• Driver same type as D.U.T. VDD
-
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test

Driver Gate Drive

P.W.
Period D=
P.W. Period

VGS=10V *

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFETS

IRFP064N
Package Outline
TO-247AC Outline
Dimensions are shown in millimeters (inches)
3 .6 5 (.1 4 3 ) -D -
1 5 .90 (.6 2 6) 3 .5 5 (.1 4 0 ) 5 .3 0 (.2 0 9 )
1 5 .30 (.6 0 2) 4 .7 0 (.1 8 5 )
0 .25 (.0 1 0) M D B M
-B - -A - 2 .5 0 (.0 8 9)
1 .5 0 (.0 5 9)
5 .5 0 (.2 1 7 ) 4

2 0 .3 0 (.80 0 )
5. 50 (.2 17 ) NOT ES :
1 9 .7 0 (.77 5 ) 2X
4. 50 (.1 77 ) 1 DIME NSIO NING & TO LERAN CING
PE R AN SI Y 14.5M, 1982.
1 2 3 2 CO NTRO LLING DIMENS IO N : IN CH .
3 CO NF ORM S T O JEDE C O UTLINE
-C - T O-247-A C.
1 4.8 0 (.5 8 3 )
4 .3 0 (.1 7 0 )
1 4.2 0 (.5 5 9 )
3 .7 0 (.1 4 5 )

2 .4 0 (.09 4 ) LEAD AS SIGN MENT S

1 .4 0 (.0 56 ) 0 .8 0 (. 03 1 )
2 .0 0 (.07 9 ) 3 X 1 .0 0 (.0 39 ) 3 X 0 .4 0 (. 01 6 ) 1 - G ATE
2X 2 - DRAIN
0 .25 (.0 10 ) M C A S 2.6 0 (.10 2 ) 3 - SO URCE
5 .45 (.2 1 5) 2.2 0 (.08 7 ) 4 - DRAIN
3 .4 0 (.1 3 3 )
2X 3 .0 0 (.1 1 8 )

Part Marking Information

TO-247AC
E X AM PL E : T H IS I S A N IR F1 010
E XAM P LE : HT HAISS SISE MB
W IT A N LY
IR FP E3 0 A A
L OT WCO IT H
D EAS9SE MB L Y
B1M I NT E RN A TIO N AL
IN TER N AT IO N AL
P AR T N
P AR T U NU
M B ER
M BE R
L O T C O D E 3 A1 Q
R E C TIF IE R IRIRF
F PE10
3 010
R EC T IF IER
LLOG
O G OO 9246
3 A19B
Q 9 310 2M D A TE C OD E
A SSBELMB
A S SEM Y LY D A TE C O D E
(Y YW W )
L O TLOTC O DCEOD E (Y YW W )
Y Y = YE A R
YY = YE A R
W W = W EE K
W W W EE K

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http://www.irf.com/ Data and specifications subject to change without notice. 8/97