2SK2850-01 FUJI POWER MOSFET

N-CHANNEL SILICON POWER MOSFET

FAP-2S Series Outline Drawings
TO-3P

Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof

Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters

Maximum ratings and characteristicAbsolute maximum ratings

Equivalent circuit schematic
(Tc=25°C unless otherwise specified)
Item Symbol Ratings Unit
Drain(D)
Drain-source voltage V DS 900 V
Continuous drain current ID ±6 A
Pulsed drain current ID(puls] ±24 A
Gate-source voltage VGS ±30 V
Repetitive or non-repetitive IAR *2 6 A Gate(G)
Maximum Avalanche Energy EAS *1 277 mJ Source(S)
Max. power dissipation PD 125 W
Operating and storage Tch +150 °C
temperature range Tstg -55 to +150 °C
*1 L=14.1mH, Vcc=90V <
*2 Tch=150°C

Electrical characteristics (Tc =25°C unless otherwise specified)

Item Symbol Test Conditions Min. Typ. Max. Units
Drain-source breakdown voltaget V(BR)DSS ID=1mA VGS=0V 900 V
Gate threshold voltage VGS(th) ID=1mA VDS=VGS 2.5 3.0 3.5 V
VDS=900V Tch=25°C 10 500 µA
Zero gate voltage drain current IDSS
VGS=0V Tch=125°C 0.2 1.0 mA
Gate-source leakage current IGSS VGS=±30V VDS=0V 10 100 nA
Drain-source on-state resistance RDS(on) ID=3.0A VGS=10V 1.87 2.50 Ω
Forward transcondutance gfs ID=3.0A VDS=25V 2.0 4.0 S
Input capacitance Ciss VDS =25V 950 1450 pF
Output capacitance Coss VGS=0V 140 210
Reverse transfer capacitance Crss f=1MHz 80 120
Turn-on time ton td(on) VCC=600V ID=6A 20 30 ns
tr VGS=10V 50 80
Turn-off time toff td(off) RGS=10 Ω 110 170
tf 60 90
Avalanche capability IAV L=100 µH Tch=25°C 6 A
Diode forward on-voltage V SD IF=2xIDR VGS=0V Tch=25°C 1.0 1.5 V
Reverse recovery time t rr IF=IDR VGS=0V 900 ns
Reverse recovery charge Qrr -di/dt=100A/µs Tch=25°C 10 µC

Thermalcharacteristics
Item Symbol Test Conditions Min. Typ. Max. Units
Rth(ch-c) channel to case 1.0 °C/W
Thermal resistance
Rth(ch-a) channel to ambient 35.0 °C/W

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2SK2850-01 FUJI POWER MOSFET
Characteristics

Power Dissipation Safe operating area

PD=f(Tc) ID=f(VDS):D=0.01,Tc=25°C
150 10
2

125

1
10 t=0.01 µs
100 1µ s

DC 10µs
PD [W]

ID [A]
75 10
0

100µs

50
1ms
-1
10 t
t
25 D=
T
T 10ms

0 -2
100ms
0 50 100 150 10 0 1 2 3
10 10 10 10
o
Tc [ C] VDS [V]

Typical output characteristics Typical transfer characteristic

ID=f(VDS):80µs Pulse test,Tch=25°C ID=f(VGS):80µs Pulse test,VDS=25V,Tch=25°C
14

VGS=20V 10V
12
8V
1
7V 10
10 6V

8
5.5V
ID [A]

0
10
ID [A]

5.0V
4 -1
10

2 4.5V

4.0V
0 -2
10
0 5 10 15 20 25 30 35 0 1 2 3 4 5 6 7 8 9 10

VDS [V] VGS [V]

Typical forward transconductance Typical drain-source on-state resistance

gfs=f(ID):80µs Pulse test,VDS=25V,Tch=25°C RDS(on)=f(ID):80µs Pulse test, Tch=25°C
7

6
VGS=
1 4.0V 4.5V 5.0V 5.5V
10
5
RDS(on) [ Ω ]

4
gfs [s]

6V
7V
8V
3
0 10V
10
20V
2

-1 0
10 -1 0 1
10 10 10 0 5 10 15
ID [A] ID [A]

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2SK2850-01 FUJI POWER MOSFET

Drain-source on-state resistance Gate threshold voltage

RDS(on)=f(Tch):ID=3A,VGS=10V VGS(th)=f(Tch):ID=1mA,VDS=VGS
8 5.0

4.0
6
max.

VGS(th) [V]
3.0
RDS(on) [ Ω ]

typ.

4
max. min.

2.0

typ.
2
1.0

0 0.0
-50 0 50 100 150 -50 0 50 100 150
o
Tch [••] Tch [ C]

Typical gate charge characteristic Typical capacitances

VGS=f(Qg):ID=6A,Tch=25°C C=f(VDS):VGS=0V,f=1MHz
800 40 10n
Vcc=720V
700 0V 35
18
cc= 0V
V 45 V
0
600 72 30

1n Ciss
500 25
450V
VDS [V]

VGS [V]

C [F]

400 20

300 15 Coss
100p

Crss
200 180V 10

100 5

0 0 10p -2 -1 0 1 2
0 20 40 60 80 100 120 140 160 180 10 10 10 10 10
Qg [nC] VDS [V]

Forward characteristic of reverse of diode Avalanche energy derating

IF=f(VSD):80µs Pulse test,VGS=0V Eas=f(starting Tch):Vcc=90V,IAV=6A
2
10 300

250
1
10

200
o
Tch=25 C typ.
IF [A]

Eas [mJ]

0
10 150

100
-1
10

50

-2
10 0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 50 100 150
VSD [V] Starting Tch [ C]
o

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2SK2850-01 FUJI POWER MOSFET

Transient thermal impedande

1
Zthch=f(t) parameter:D=t/T
10

0
10
D=0.5
Zthch-c [K/W]

0.2
0.1
-1
10 0.05
t
t
D=
T
0.02
T
0 0.01
-2
10
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

t [s]