TRP Engineering College

Department of Electronics & Communication Engineering

Unit wise objective type question

Course code : EC 8351

Title of the Course : Electronics Circuits - I

Name of the University : Anna University - Chennai

Regulation of the curriculum : 2013

Course Coordinator : D.Sankareswaran

UNIT I

1. Calculate VCE.

A.–4.52 V
B. 4.52 V
C. –9 V
D.9 V

Answer: Option B

2. For the BJT to operate in the active (linear) region, the base-emitter junction must be
________-biased and the base-collector junction must be ________-biased.
A.forward, forward
B. forward, reverse
C. reverse, reverse
D.reverse, forward

Answer: Option B
3. The cutoff region is defined by IB ________ 0 A.
A.>
B. <
C.
D.

Answer: Option C

4. Determine the reading on the meter when VCC = 20 V, RC = 5 k , and IC = 2 mA.

A.10 V
B. –10 V
C. 0.7 V
D.20 V

Answer: Option A

5. In a fixed-bias circuit, which one of the stability factors overrides the other factors?
A.S(ICO)
B. S(VBE)
C. S( )
D.Undefined

Answer: Option C

6. Calculate the voltage across the 91 k resistor.

A.18 V
B. 9.22 V
C. 3.23 V
D.None of the above

Answer: Option C
7. Calculate the value of VCEQ.

A.8.78 V
B. 0 V
C. 7.86 V
D.18 V

Answer: Option

8. Calculate the approximate value of the maximum power rating for the transistor represented
by the output characteristics of Figure 4.1?
A.250 mW
B. 170 mW
C. 50 mW
D.0 mW

Answer: Option B

9. For what value of does the transistor enter the saturation region?

A.20
B. 50
C. 75
D.116

Answer: Option D
10. Determine the change in IC from 25ºC to 175ºC for the transistor defined in this table for
fixed-bias with RB = 240 k and = 100 due to the S(VBE) stability factor.

A.145.8 A
B. 145.8 nA
C. –145.8 A
D.–145.8 nA

Answer: Option A

11. Which of the following is (are) related to an emitter-follower configuration?

A.The input and output signals are in phase.
B. The voltage gain is slightly less than 1.
C. Output is drawn from the emitter terminal.
D.All of the above

Answer: Option D

12. At what region of operation is the base-emitter junction forward biased and the base-
collector junction reverse biased?
A.Saturation
B. Linear or active
C. Cutoff
D.None of the above

Answer: Option B

13. You can select the values for the emitter and collector resistors from the information that
is provided for this circuit.

A.True
B. False

Answer: Option B
 14. In the case of this circuit, you must assume that VE = 0.1·VCC in order to calculate RC and
R E.

A.True
B. False

15. For an "on" transistor, the voltage VBE should be in the neighborhood of 0.7 V.
A.True
B. False

Answer: Option A

16. In a voltage-divider circuit, which one of the stability factors has the least effect on the
device at very high temperature?
A.S(ICO)
B. S(VBE)
C. S( )
D.Undefined

Answer: Option C

17. Which of the following is (are) a stability factor?

A.S(ICO)
B. S(VBE)
C. S( )
D.All of the above

Answer: Option D
18. Calculate ICsat.

A.35.29 mA
B. 5.45 mA
C. 1.86 mA
D.4.72 mA

Answer: Option D

19. Calculate the storage time in a transistor switching network if toff is 56 ns, tf = 14 ns, and tr =
20 ns.
A.70 ns
B. 42 ns
C. 36 ns
D.34 ns

Answer: Option B

20. Determine ICQ at a temperature of 175º C if ICQ = 2 mA at 25º C for RB / RE = 20 due to the
S( ) stability factor.
A.2.417 mA
B. 2.392 mA
C. 2.25 mA
D.2.58 mA

Answer: Option A

UNIT II

1. The current gain for the Darlington connection is ________.

A.
B.
C.
D.

Answer: Option B
 2. Which of the following configurations has the lowest output impedance?
A.Fixed-bias
B. Voltage-divider
C. Emitter-follower
D.None of the above

Answer: Option C

3. Which of the h-parameters corresponds to re in a common-base configuration?

A.hib
B. hfb
C. hrb
D.hob

Answer: Option A

4. Refer to this figure. Find the value of IE.

A.2 mA
B. 4 mA
C. 5 mA
D.6 mA

Answer: Option D

5. Which of the following is referred to as the reverse transfer voltage ratio?

A.hi
B. hr
C. hf
D.ho

Answer: Option B

6. Which of the following conditions must be met to allow the use of the approximate approach
in a voltage-divider bias configuration?
A. re > 10R2
B. RE > 10R2
C. RE < 10R2
D. re < 10R2
 Answer: Option D

7. Refer to this figure. Determine the value of Av.

A.49.6
B. 5
C. 100
D.595

Answer: Option B

8. For a common-emitter amplifier, the purpose of swamping is

A.to minimize gain.
B. to reduce the effects of r'e
C. to maximize gain.
D.no purpose.

Answer: Option B

9. What is the typical value of the current gain of a common-base configuration?

A.Less than 1
B. Between 1 and 50
C. Between 100 and 200
D.Undefined

Answer: Option A

10. What is the most important r parameter for amplifier analysis?

A.rb′
B. rc′
C. re′

Answer: Option C
11. An emitter-follower is also known as a
A.common-emitter amplifier.
B. common-base amplifier.
C. common-collector amplifier.
D.Darlington pair.

Answer: Option C

12. The ________ model fails to account for the output impedance level of the device and the
feedback effect from output to input.
A.hybrid equivalent
B. re
C.
D.Thevenin

Answer: Option B

13. Refer to this figure. Calculate the value of VB.

A.5 V
B. 3.7 V
C. 20 V
D.3 V

Answer: Option B

14. You have a need to apply an amplifier with a very high power gain. Which of the following
would you choose?
A.common-collector
B. common-base
C. common-emitter
D.emitter-follower

Answer: Option C

15. What is the voltage gain of a feedback pair connection?

A.1
B. –1
C. 100
D.–100

Answer: Option A
16. A common-emitter amplifier has ________ voltage gain, ________ current gain, ________
power gain, and ________ input impedance.
A.high, low, high, low
B. high, high, high, low
C. high, high, high, high
D.low, low, low, high

Answer: Option B

17. What is the range of the input impedance of a common-base configuration?

A.A few ohms to a maximum of 50
B. 1 k to 5 k
C. 100 k to 500 k
D.1 M to 2 M

Answer: Option A

18. The advantage that a Sziklai pair has over a Darlington pair is
A.higher current gain.
B. less input voltage is needed to turn it on.
C. higher input impedance.
D.higher voltage gain.

Answer: Option B

19. What is the typical range of the output impedance of a common-emitter configuration?
A.10 to 100
B. 1 k to 5 k
C. 40 k to 50 k
D.500 k to 1 k

Answer: Option C

20. What is the unit of the parameter ho?

A.Volt
B. Ohm
C. Siemen
D.No unit

Answer: Option C

UNIT III

1. A common-gate amplifier is similar in configuration to which BJT amplifier?

A.common-emitter
B. common-collector
C. common-base
D.emitter-follower

Answer: Option C
2. The theoretical efficiency of a class D amplifier is
A.75%.
B. 85%.
C. 90%.
D.100%.

Answer: Option D

3. A common-source amplifier is similar in configuration to which BJT amplifier?

A.common-base
B. common-collector
C. common-emitter
D.emitter-follower

Answer: Option C

4. Refer to this figure. If R6 opened, the signal at the drain of Q1 would

A.increase.
B. decrease.
C. remain the same.
D.distort.

Answer: Option C

5. Refer to this figure. Find the value of VD.

A.20 V
B. 11 V
C. 10 V
D.9 V

Answer: Option D
6. A BJT is a ________-controlled device.
A.current
B. voltage

Answer: Option A

7. Referring to this figure, calculate Av if rd = 19 k .

A.–2.85
B. –3.26
C. –2.95
D.–3.21

Answer: Option C

8. A common-drain amplifier is similar in configuration to which BJT amplifier?

A.common-emitter
B. common-collector
C. common-base
D.common-gate

Answer: Option B

9. Referring to this figure, calculate Av for yos = 58 S.

A.–7.29
B. –7.50
C. –8.05
D.–8.55

Answer: Option A
10. Refer to this figure. If Vin = 1 V p-p, the output voltage Vout would be

A.undistorted.
B. clipped on the negative peaks.
C. clipped on the positive peaks.
D.0 V p-p.

Answer: Option A

11. Use the following equation to calculate gm for a JFET having IDSS = 10 mA, VP = –5 V,
and VGSQ = –2.5 V.

A.2 mS
B. 3 mS
C. 4 mS
D.5 mS

Answer: Option A

12. For what value of ID is gm equal to 0.5 gm0?

A.0 mA
B. 0.25 IDSS
C. 0.5 IDSS
D.IDSS

Answer: Option B
13. Refer to this figure. If Vin = 20 mV p-p what is the output voltage?

A.176 mV p-p
B. 88 mV p-p
C. 48 mV p-p
D.24 mV p-p

Answer: Option A

14. Referring to the following figure, calculate gm for VGSQ = –1.25 V.

A.2 mS
B. 2.5 mS
C. 2.75 mS
D.3.25 mS

Answer: Option C

15. Referring to this figure, calculate the value of RD if the ac gain is 10. Assume VGSQ =
¼Vp.

A.2.2 k
B. 2.42 k
C. 2.62 k
D.2.82 k

Answer: Option D
16. Where do you get the level of gm and rd for an FET transistor?
A.from the dc biasing arrangement
B. from the specification sheet
C. from the characteristics
D.All of the above

Answer: Option D

17. The class D amplifier uses what type of transistors?

A.JFETs
B. BJTs
C. MOSFETs
D.any of the above

Answer: Option C

18. What is (are) the function(s) of the coupling capacitors C1 and C2 in an FET circuit?
A.to create an open circuit for dc analysis
B. to isolate the dc biasing arrangement from the applied signal and load
C. to create a short-circuit equivalent for ac analysis
D.All of the above

Answer: Option D

19. An FET is a ________-controlled device.

A.current
B. voltage

Answer: Option B

20. What is the input resistance (Rin(source)) of a common-gate amplifier?

A.Rs
B.
C. 1 / gm
D.none of the above

Answer: Option C

UNIT IV

1. A change in frequency by a factor of ________ is equivalent to 1 octave.

A.2
B. 10
C. 5
D.20

Answer: Option A
2. What is the ratio of the capacitive reactance XCS to the input resistance RI of the input RC
circuit of a single-stage BJT amplifier at the low-frequency cutoff?
A.0.25
B. 0.50
C. 0.75
D.1.0

Answer: Option D

3. For which of the following frequency region(s) can the coupling and bypass capacitors no
longer be replaced by the short-circuit approximation?
A.Low-frequency
B. Mid-frequency
C. High-frequency
D.All of the above

Answer: Option A

4. Determine the lower cutoff frequency of this network.

A.15.8 Hz
B. 46.13 Hz
C. 238.73 Hz
D.1575.8 Hz

Answer: Option C

5. The smaller capacitive elements of the design will determine the ________ cutoff
frequencies.
A.low
B. mid
C. high
Answer: Option C

6. What is the range of the capacitor Cds?

A.0.01 to 0.1 pF
B. 0.1 to 1 pF
C. 0.1 to 1 nF
D.0.1 to 1 F

Answer: Option B

7. An amplifier rated at 30-W output is connected to a 5- speaker. Calculate the input

voltage for the rated output if the amplifier voltage gain is 20 dB.
A.1.225 mV
B. 12.25 mV
C. 122.5 mV
D.1.225 V

Answer: Option D

8. A 3-dB drop in hfe will occur at a frequency defined by ________.

A.
B.
C. 1
D.2

Answer: Option B

9. An amplifier rated at 30-W output is connected to a 5- speaker. Calculate the input

power required for full power output if the power gain is 20 dB.
A.3 mW
B. 30 mW
C. 300 mW
D.3 W

Answer: Option C

10. The larger capacitive elements of the design will determine the ________ cutoff
frequency.
A.low
B. mid
C. high

Answer: Option A

11. Which of the following elements is (are) important in determining the gain of the
system in the high-frequency region?
A.Interelectrode capacitances
B. Wiring capacitances
C. Miller effect capacitance
D.All of the above

Answer: Option D
 12. The input power to a device is 10,000 W at 1000 V. The output power is 500 W, and
the output impedance is 100 . Find the voltage gain in decibels.
A.–30.01 dB
B. –20.0 dB
C. –13.01 dB
D.–3.01 dB

Answer: Option C

13. By what factor does an audio level change if the power level changes from 4 W to
4096 W?
A.2
B. 4
C. 6
D.8

Answer: Option C

14. For audio systems, the reference level is generally accepted as ________.
A.1 mW
B. 1 W
C. 10 mW
D.100 mW

Answer: Option A

15. What is the range of the capacitors Cgs and Cgd?

A.1 to 10 pF
B. 1 to 10 nF
C. 1 to 10 F
D.1 to 10 F

Answer: Option A

16. For the low-frequency response of a BJT amplifier, the maximum gain is where ________ .
A.RB = 0
B. RC = 0
C. RE = 0

Answer: Option C

17. In the input RC circuit of a single-stage BJT, by how much does the base voltage lead the
input voltage at the cutoff frequency in the low-frequency region?
A.About 0º
B. 45º
C. About 90º
D.None of the above
 Answer: Option B

18. What is the normalized gain expressed in dB for the cutoff frequencies?
A.–3 dB
B. +3 dB
C. –6 dB
D.–20 dB

Answer: Option A

19. Which of the low-frequency cutoffs determined by CS, CC, or CE will be the predominant
factor in determining the low-frequency response for the complete system?
A.lowest
B. middle
C. highest
D.None of the above

Answer: Option C

20. Determine the break frequency for this circuit.

A.15.915 Hz
B. 159.15 Hz
C. 31.85 Hz
D.318.5 Hz

Answer: Option B