Professional Documents
Culture Documents
Vs 60cph03p
Vs 60cph03p
com
FSDH0265RN, FSDM0265RN
Green Mode Fairchild Power Switch (FPSTM)
Features
OUTPUT POWER TABLE
• Internal Avalanche Rugged Sense FET
• Consumes only 0.65W at 240VAC & 0.3W load with 230VAC ±15%(3) 85-265VAC
Advanced Burst-Mode Operation PRODUCT Adapt- Open Adapt- Open
• Frequency Modulation for EMI Reduction er(1) Frame(2) er(1) Frame(2)
• Precision Fixed Operating Frequency FSDL321 11W 17W 8W 12W
• Internal Start-up Circuit
FSDH321 11W 17W 8W 12W
• Pulse-by-Pulse Current Limiting
• Abnormal Over Current Protection (AOCP) FSDL0165RN 13W 23W 11W 17W
• Over Voltage Protection (OVP) FSDM0265RN 16W 27W 13W 20W
• Over Load Protection (OLP) FSDH0265RN 16W 27W 13W 20W
• Internal Thermal Shutdown Function (TSD)
FSDL0365RN 19W 30W 16W 24W
• Auto-Restart Mode
• Under Voltage Lockout (UVLO) FSDM0365RN 19W 30W 16W 24W
• Low Operating Current (3mA) FSDL321L 11W 17W 8W 12W
• Adjustable Peak Current Limit FSDH321L 11W 17W 8W 12W
• Built-in Soft Start
FSDL0165RL 13W 23W 11W 17W
+ ICH
V BURH -
8V/12V
Vcc good Internal
Vcc Vref
Freq.
Bias
V BURL /V BURH
Modulation
IBUR(pk)
Vcc Vcc
OSC
IDELAY I FB
Vfb Normal S Q
3 PWM
Gate
2.5R Burst R Q
driver
Ipk R
4 Soft
Start LEB
V SD
Vcc 1 GND
S Q
Vovp
Vcc good R Q
AOCP
TSD Vocp
2
FSDH0265RN, FSDM0265RN
Pin Definitions
Pin Configuration
8DIP
8LSOP
GND 1 8 Drain
Vcc 2 7 Drain
Vfb 3 6 Drain
Ipk 4 5 Vstr
3
FSDH0265RN, FSDM0265RN
Note:
1. Repetitive rating: Pulse width is limited by maximum junction temperature
2. L = 51mH, starting Tj = 25°C
Thermal Impedance
(Ta=25°C, unless otherwise specified)
Note:
1. Free standing with no heatsink; Without copper clad.
/ Measurement Condition : Just before junction temperature TJ enters into OTP.
2. Measured on the DRAIN pin close to plastic interface.
3. Measured on the PKG top surface.
- all items are tested with the standards JESD 51-2 and 51-10 (DIP).
4
FSDH0265RN, FSDM0265RN
Electrical Characteristics
(Ta = 25°C unless otherwise specified)
Note:
1. Pulse test: Pulse width ≤ 300us, duty ≤ 2%
2. These parameters, although guaranteed, are tested in EDS (wafer test) process
3. These parameters, although guaranteed, are not 100% tested in production
5
FSDH0265RN, FSDM0265RN
6
FSDH0265RN, FSDM0265RN
1.20 1.20
1.00 1.00
Normalized
0.80
Normalized
0.80
0.60 0.60
0.40 0.40
0.20 0.20
0.00 0.00
-50 0 50 100 150 -50 0 50 100 150
T emp[ ℃] T emp[℃]
1.20 1.20
1.00 1.00
0.80
Normalized
Normalized
0.80
0.60 0.60
0.40 0.40
0.20 0.20
0.00 0.00
-50 0 50 100 150 -50 0 50 100 150
T emp[℃] T emp[ ℃]
Maximum Duty Cycle (DMAX) vs. Ta Operating Supply Current (IOP) vs. Ta
1.20 1.20
1.00 1.00
0.80
Normalized
Normalized
0.80
0.60 0.60
0.40 0.40
0.20 0.20
0.00 0.00
-50 0 50 100 150 -50 0 50 100 150
T emp[℃] T emp[℃]
Start Threshold Voltage (VSTART) vs. Ta Stop Threshold Voltage (VSTOP) vs. Ta
7
FSDH0265RN, FSDM0265RN
1.20 1.20
1.00 1.00
0.80
Normalized
Normalized
0.80
0.60 0.60
0.40 0.40
0.20 0.20
0.00 0.00
-50 0 50 100 150 -50 0 50 100 150
T emp[℃] T emp[℃]
Feedback Source Current (IFB) vs. Ta Start Up Charging Current (ICH) vs. Ta
1.20 1.20
1.00 1.00
0.80
Normalized
Normalized
0.80
0.60 0.60
0.40 0.40
0.20 0.20
0.00 0.00
-50 0 50 100 150 -50 0 50 100 150
T emp[℃] T emp[ ℃]
Peak Current Limit (ILIM) vs. Ta Burst Peak Current (IBUR(pk)) vs. Ta
1.20
1.00
Normalized
0.80
0.60
0.40
0.20
0.00
-50 0 50 100 150
T emp[℃]
8
FSDH0265RN, FSDM0265RN
Functional Description
3. Leading Edge Blanking (LEB) : At the instant the inter-
nal Sense FET is turned on, the primary side capacitance and
1. Startup : In previous generations of Fairchild Power secondary side rectifier diode reverse recovery typically
Switches (FPSTM) the Vstr pin had an external resistor to the cause a high current spike through the Sense FET. Excessive
DC input voltage line. In this generation the startup resistor voltage across the Rsense resistor leads to incorrect feedback
is replaced by an internal high voltage current source and a operation in the current mode PWM control. To counter this
switch that shuts off when 15ms goes by after the supply effect, the FPS employs a leading edge blanking (LEB) cir-
voltage, Vcc, gets above 12V. The source turns back on if cuit. This circuit inhibits the PWM comparator for a short
Vcc drops below 8V. time (tLEB) after the Sense FET is turned on.
Vin,dc
ISTR
4. Protection Circuits : The FPS has several protective
functions such as over load protection (OLP), over voltage
Vstr
protection (OVP), abnormal over current protection
Vcc Vcc<8V
(AOCP), under voltage lock out (UVLO) and thermal shut-
UVLO on
J-FET down (TSD). Because these protection circuits are fully inte-
15ms after ICH
Vcc≥12V grated inside the IC without external components, the
UVLO off reliability is improved without increasing cost. Once a fault
condition occurs, switching is terminated and the Sense FET
remains off. This causes Vcc to fall. When Vcc reaches the
UVLO stop voltage VSTOP (8V), the protection is reset and
the internal high voltage current source charges the Vcc
Figure 4. High Voltage Current Source capacitor via the Vstr pin. When Vcc reaches the UVLO
start voltage VSTART (12V), the FPS resumes its normal
operation. In this manner, the auto-restart can alternately
enable and disable the switching of the power Sense FET
2. Feedback Control : The FSDx0265RN employs current until the fault condition is eliminated.
mode control, as shown in Figure 5. An opto-coupler (such
as the H11A817A) and shunt regulator (such as the KA431)
are typically used to implement the feedback network. Com-
paring the feedback voltage with the voltage across the 4.1 Over Load Protection (OLP) : Overload is defined as
Rsense resistor plus an offset voltage makes it possible to the load current exceeding a pre-set level due to an unex-
control the switching duty cycle. When the KA431 reference pected event. In this situation, the protection circuit should
pin voltage exceeds the internal reference voltage of 2.5V, be activated in order to protect the SMPS. However, even
the optocoupler LED current increases, the feedback voltage when the SMPS is operating normally, the over load protec-
Vfb is pulled down and it reduces the duty cycle. This event tion (OLP) circuit can be activated during the load transition.
typically happens when the input voltage is increased or the In order to avoid this undesired operation, the OLP circuit is
output load is decreased. designed to be activated after a specified time to determine
whether it is a transient situation or an overload situation. In
conjunction with the Ipk current limit pin (if used) the cur-
rent mode feedback path would limit the current in the Sense
Vcc Vcc
FET when the maximum PWM duty cycle is attained. If the
5uA 0.9mA
output consumes more than this maximum power, the output
Vo Vfb
voltage (Vo) decreases below its rating voltage. This reduces
3 OSC
CFB
+ D1 D2
2.5R the current through the opto-coupler LED, which also
VFB
VFB,in
Gate
reduces the opto-coupler transistor current, thus increasing
- R driver the feedback voltage (VFB). If VFB exceeds 3V, the feed-
431
back input diode is blocked and the 5uA current source (IDE-
LAY) starts to charge Cfb slowly up to Vcc. In this condition,
OLP VFB increases until it reaches 6V, when the switching opera-
VSD
tion is terminated as shown in Figure 6. The shutdown delay
time is the time required to charge Cfb from 3V to 6V with
5uA current source.
Figure 5. Pulse Width Modulation (PWM) Circuit
9
FSDH0265RN, FSDM0265RN
PWM
VFB COMPARATOR
VFB,in CLK
Over Load Protection LEB Drain
Gate Driver
6V Vsense
AOCP
COMPARATOR
S Q
R
3V
VAOCP Rsense
t12= CFB×(V(t2)-V(t1)) / IDELAY
t1 t2 t
Figure 7. Abnormal Over Current Protection (AOCP)
V (t 2 ) − V (t1 )
t12 = C FB ; I DELAY = 5 µA, V (t1 ) = 3V , V (t 2 ) = 6V
I DELAY
10
FSDH0265RN, FSDM0265RN
5. Soft Start : The FPS has an internal soft start circuit that Burst Burst
slowly increases the feedback voltage together with the Operation Operation
Sense FET current after it starts up. The typical soft start VFB Normal
Operation
time is 15msec, as shown in Figure 8, where progressive
increments of the Sense FET current are allowed during the VBURH
start-up phase. The pulse width to the power switching
VBURL
device is progressively increased to establish the correct
Current
working conditions for transformers, inductors, and capaci- Waveform
tors. The voltage on the output capacitors is progressively Switching Switching
OFF OFF
increased with the intention of smoothly establishing the
required output voltage. It also helps to prevent transformer
saturation and reduce the stress on the secondary diode. +
VBURH -
IFB
Vfb IDELAY Normal
Current limit 3 PWM
0.68A 2.5R Burst
R
t MOSFET
Current
69kHz
67kHz
65kHz
4ms t
11
FSDH0265RN, FSDM0265RN
Vcc Vcc
0.8kΩ
Ipk
Frequency (MHz) 4 SenseFET
Current
Sense
Rx
Figure 11. KA5-series FPS Full Range EMI scan(67KHz,
no Frequency Modulation) with DVD Player SET
inserting Rx between the Ipk pin and the ground. The value
of the Rx can be estimated by the following equations:
X = Rx || 2.8kΩ .
Frequency (MHz)
12
FSDH0265RN, FSDM0265RN
Application Tips
Glue or Varnish
Ceramic Capacitor
13
FSDH0265RN, FSDM0265RN
Features
• High efficiency (>76% at universal input)
• Low standby mode power consumption (<1W at 230Vac input and 0.5W load)
• Low component count
• Enhanced system reliability through various protection functions
• Low EMI through frequency modulation
• Internal soft-start (15ms)
1. Schematic
T101
L203 10uH
EER2828
16V
11
RT101 1 D203 C205 C206
5D-9 EGP20D 470uF 470uF
R105 C104 35V 35V
R102 2
200kΩ 56kΩ 3.3nF
630V L205 10uH
C103 D101 10
47uF UF 4007 12V
400V 3 D204 C207 C208
2 EGP20D 470uF 470uF
IC101 35V 35V
FSDH0265RN 12
5 8
1 3 Vstr Drain
BD101 7
Drain L207 4.7uH
4 6
Ipk Drain 6
D103 5.1V
R106 R104
UF 4004
4 300kΩ 3.3kΩ 3
Vfb Vcc 2 D207
C213 C214
GND C106 D102 R103 4 1000uF 1000uF
C107 SB360
C102 1 47uF UF 4004 5Ω 10V 10V
47nF
100nF 50V
50V 5 L206 4.7uH
AC275V
9 3.3V
C108
1uF D205 C209 C210
100V SB360 1000uF 1000uF
10V 10V
LF101
55mH
8
C302
2.2nF R201
C101 510Ω
100nF R203
AC275V 6.2kΩ
R202
R204 C215
1kΩ
20kΩ 100nF
IC302
TNR
FOD817A
F101
FUSE IC301 R205
KA431 6kΩ
14
FSDH0265RN, FSDM0265RN
EER2828
12
Np/2
1
Np/2 11
N16V N16V
Np/2 2 10
N12V N12V
3
9 N Na
3.3V
Na 4 N5.1V
8
6mm 3mm
5 N3.3V
7
Np/2
6
N5.1V
3. Winding Specification
P in (S → F ) W ire T u rn s W in d in g M e th o d
N p /2 3 → 2 0 .2 5 φ × 1 50 C e n te r S o le n o id w in d in g
In s u la tio n : P o ly e s te r T a p e t = 0 .0 5 0 m m , 2 L a ye rs
N 3 .3 V 9 → 8 0 .3 3 φ × 2 4 C e n te r S o le n o id w in d in g
In s u la tio n : P o ly e s te r T a p e t = 0 .0 5 0 m m , 2 L a ye rs
N 5 .1 V 6 → 9 0 .3 3 φ × 1 2 C e n te r S o le n o id w in d in g
In s u la tio n : P o ly e s te r T a p e t = 0 .0 5 0 m m , 2 L a ye rs
Na 4 → 5 0 .2 5 φ × 1 16 C e n te r S o le n o id w in d in g
In s u la tio n : P o ly e s te r T a p e t = 0 .0 5 0 m m , 2 L a ye rs
N 12V 10 → 12 0 .3 3 φ × 1 14 C e n te r S o le n o id w in d in g
In s u la tio n : P o ly e s te r T a p e t = 0 .0 5 0 m m , 3 L a ye rs
N 16V 11 → 12 0 .3 3 φ × 1 18 C e n te r S o le n o id w in d in g
In s u la tio n : P o ly e s te r T a p e t = 0 .0 5 0 m m , 2 L a ye rs
N p /2 2→ 1 0 .2 5 φ × 1 50 C e n te r S o le n o id w in d in g
In s u la tio n : P o ly e s te r T a p e t = 0 .0 5 0 m m , 2 L a ye rs
4. Electrical Characteristics
P in Spec. R e m a rk
In d u c ta n c e 1- 3 1 .4 m H ± 1 0 % 100kH z, 1V
Leakage 1- 3 25 uH M ax. S h o r t a ll o t h e r p in s
15
FSDH0265RN, FSDM0265RN
16
FSDH0265RN, FSDM0265RN
7. Layout
17
FSDH0265RN, FSDM0265RN
Package Dimensions
8DIP
18
FSDH0265RN, FSDM0265RN
8LSOP
19
FSDH0265RN, FSDM0265RN
Ordering Information
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER
DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
www.fairchildsemi.com