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EECS240 Lecture 4 4
• Hand analysis
• Velocity-sat model (good mostly for intuition)
• Small-signal model
• Challenge
• How to accurately design when hand analysis
models may be way off?
Hopeless to model this with a simple equation
(e.g. gds = λ ID)
Parameters Designers Care About What You Really Care About: Gain av0
• Layout designer:
• Mostly care about just W and L • Represents maximum attainable
gain from a transistor
• Often more useful than ro
• Circuit designer:
• Gain gm, ro
• Bandwidth gm, CGS, CGD, …
• Simulation Notes:
• Power ID • Bias current idc sets VGS - VT
• Voltage swing minimum VDS • Use feedback to find correct VGS
• Noise while sweeping VDS
• Use relatively small gain (100) for
fast DC convergence
• Can get many of the circuit parameters without
resorting to BSIM
• Or rather, by just using BSIM as a look-up table
range 0.35µm
g m⋅r o
25
20 0.25µm
15
0.18µm
10
0
several device 0.0 0.1 0.2 0.3 0.4
L↑ av0 ↑
Vod
70 0.5µm
60 0.35µm ?
50
gm⋅ro
0.25µm
40
30 0.18µm
20
10
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
• How much gm per unit current
VDS [V]
• Purely a DC metric
Short channel devices usually have lower • Will look at dynamic implications later
peak gain
• Why does gm/ID flatten out at low Vgs?
EECS240 Lecture 4 9 EECS240 Lecture 4 12
Weak Inversion gm Substitute for gm/ID: V*
• In weak inversion we have bipolar behavior • Define:
2I D gm 2
V* = ⇔ =
gm ID V *
• g m ≈ 2πf u C L = 3.14mS
• Units (V-1) and physical interpretation a little
strange
• But we’ll just redefine things slightly to fix this • Pick V* = 200mV
g mV *
ID = = 314µA
• 2
• ID = 0.5 gm V* = 314µA
• W from graph
(generate with SPICE)
141uA
W = 10µm (314µA /141µA)
= 22µm
• MOSFET:
• 4 terminals: S, G, D, B
• 4 charges: QS + QG + QD + QB = 0 (3 free variables)
• 3 independent voltages: VGS, VDS, VSB
• Amplifier gain > 70; gain-bandwidth “dead on” • 9 derivatives: Cij = dQi / dVj, e.g. CG,GS ~ CGS
• Output range to 0.6V – 1.5V for gain (about ±0.45V • Cij != Cji
swing)
Ref: HSPICE manual, “Introduction to Transcapacitance”, pp.
• How did we pick V* = 200mV? Why not 75mV? 15:42, Metasoft, 1996.
• Need to look at AC model…
EECS240 Lecture 4 20 EECS240 Lecture 4 23
0.35u Process
40
fT [GHz]
• GEO = 0: No sharing 30
0.25µm
• GEO = 1: Drain shared 20 0.35µm
300
fT⋅gm/ID [GHz/V]
250
od 200
0.35µm
100
0
-0.1 0.0 0.1 0.2 0.3 0.4 0.5
V G S -V TH [V]
• Pick L
• Short channel high fT
• Long channel high ro, av0, better matching