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T T R Q: 2.3.6 Creep Law For Aluminum Based Mmcs
T T R Q: 2.3.6 Creep Law For Aluminum Based Mmcs
and,
R ln (ε&1 / ε& 2 )
Q=
(1 / T2 − 1 / T1 )
An extensive correlation between creep and diffusion data for pure metals
(refer Fig. 2.7) indicates that the activation energy for high temperature creep is
equal to the activation energy for self diffusion. The activation energy for self
diffusion is the sum of energies for the formation and movement of vacancies,
which strongly supports the view that dislocation climb is the rate controlling step
another factor in support of this view. Therefore, it is expected that the metals in
which the vacancies move rapidly would have better creep resistance.
creep rate ( ε&e ) is related to the effective stress ( σ e ) through the following well
documented threshold stress ( σ o ) based creep law (Park et al, 1990; Mishra and
Pandey, 1990; Mohamed et al, 1992; Pandey et al, 1992; Gonzalez and Sherby,
1993; Pandey et al, 1994; Park and Mohamed, 1995; Cadek et al, 1995; Li and
Mohamed, 1997; Li and Langdon, 1997a, 1999a; Yoshioka et al, 1998; Tjong and
n
⎛σ −σo ⎞ ⎛−Q⎞
ε&e = A ⎜ e
'
⎟ exp⎜ ⎟ (2.18)
⎝ E ⎠ ⎝ RT ⎠