ELECTRONICS 3

NAME: _____________________________ 4. Write your answers on the space

provided after this number. Draw
1. Determine the minimum amount of the diode equivalent circuit of the
Vbb neded to saturate the following gates:
transistor. The silicon transistor a. OR GATE b. AND GATE
has a β = 80 ad Vce(sat) = 0.3 V. c. NOR GATE d. NAND GATE

Vcc = 5 V

Rc = 1 kΩ

Rb = 10 kΩ

Vbb

2. What must be the value of Rb to

ensure that the transistor would
saturate? Vcc = 5 V, Rc = 500 Ω, β
= 75, Vce(sat) = 0.20 V.
+Vcc

Rc
Rb
5. What are the possible solutions in
improving the performance of the
saturating logic circuit from the effect of
Vo noise? Draw the circuit if necessary.

3. What is meant by the following

terms?
- RISE TIME
- DELAY TME
- STORAGE TIME
- FALL TIME
- FAN-OUT
- NOISE MARGIN