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Of Ucr,: For N
Of Ucr,: For N
Of Ucr,: For N
(10.23)
,k
0.8
0.6
0.4
0.2
q
"
n(k)
qEj
0.2
,
k
0 2 4 6 8 0.2 0 . 4 0.6 0.8 1
Figure 10.3: The behaviour at band filling n = 0.8. Left: the dependence of the
Fermi step height q on u = U / W , where W is the bandwidth. Right: the band state
distribution function n(k) for several different values of u. Thick line: u + 00, thin
line: u = 1, thinnest h e : u = 0. w e set k s z = 1.
allows us to.map out m* in the entire n-U plane. The result for the
case of a band with a constant density of states is shown in Fig. 10.4.
The Mott-insulating region lies at n = 1, U/W 2 2. The contour
plot shows that m* diverges if we approach the Mott-insulating state
from any direction. If we set n = 1, (10.7) describes the divergence
with increasing U. We can also fix a U > U,, = 2W, and change n