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5.5.2 Mott Insulators Versus Charge Transfer Insulators
5.5.2 Mott Insulators Versus Charge Transfer Insulators
4 9
> 3d (lower) U
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holes
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3 3d (low.)
Figure 5.8: Shifting the relative positions of the Hubbard subbands and the 2p
band gives rise to different kinds of systems. In a Mott insulator (MI), the smallest
gap is between two Hubbard subbands. In a charge transfer insulator (CTI), the
lowest-energy process is the excitation of an electron from the 2p band to the upper
Hubbard subband. In both cases, the activation energy Aac is marked. In the right-
hand panel, the overlapping of the 21, band with the upper Hubbard subband gives
a metal (2pM) in which the dominant charge carriers are 2p holes. The horizontal
lines indicate the F'ermi level (FF.