1.

Schematic Diagram
The typical NMOS transistor circuit is as shown below:

Figure 1

2 Result and Analysis

a) IDS vs VGS(VDS = 1.2V)

Analysis:
From the graph we can observe that the IDS are proportional to VGS. When VGS
increased, the IDS will also increase. This can be explain by when VGS increased, the
channel depth will also be increased casing more electrons can flow from source to
drain. Thus a large current can flow through the channel.

b) IDS vs VDS(VGS = 600mV)

Analysis:
From the graph it can be shown that as VDS increased, the IDS will also increased.
Which is not as predicted which suppose to be flat when the transistors reach
saturation. This is due to the channel length modulation effect. When the transistor
reaches saturation, as the VDS continue to increase, the length of the channel continue
to reduce which in turn caused the current to continue increase.

c) IDS vs VD(Parametric Analysis)

Table 1: Result of IDS vs VDS

VGS(V) 0.5 0.6 0.7

IDS(uA) 920.4 1936 3238
VDS(V) 0.9 0.9 0.9

When IDS = 150uA and VGS = 0.6V, the value of VDS is equal to 0.0187V
Analysis:
From both the above graph, it can show that as VGS increased, the IDS will also increase
which is the same as the equation predicted. As the gate voltage increased, the depth
of the inversion layer increased, causing a larger current can flow through the devices.

d) IDS vs VGS (Parametric Analysis)

Analysis:
From the graph, it can show that as the VSB become more negative, the higher the IDS
will be. This is due to the decrease in the threshold voltage due to the body effect
which is the same as the threshold voltage equation predicted.

e) gm vs VGS – VTN (W/L constant)

Analysis:
 From the graph it can be showing that, as the overdrive voltage increased, the gm
will also increased. This is the same as the result predicted by the first gm equation
which describe that the gm is proportional to overdrive voltage.

f) gm vs IDS (W/L constant)

Analysis:
As show from the graph, the gm is increased with the IDS and become saturated due
to the channel pinched off in saturation. This is also the same result that is predicted
by the gm second equation.

g) gm vs VGS – VTH( IDS constant)

Analysis:
From the graph it can be shown that the gm is inversely proportional to the overdrive
voltage. This is because the current going through the MOSFET is limited by the
current source. When the MOSFET is working in the linear region the gm is increased
as the overdrive voltage increase because increase in channel conductivity which will
allow more current flow. But when the transistor work in saturation region, although
the conductivity of the channel still increased but the maximum available current is
limited by the current source. Thus gm will decrease.

3 Discussion
I. When considering characteristic of the NMOS transistor, there are
several parameter that will need to take into account due to their
influence on the performance of the transistor.
II. Parameter such as VGS, VSB, VDS, gm, Voverdrive and etc need to be
take into account carefully especially doing design practically. Any
mistake may cause the whole circuit to malfunction.
III. By using parametric analysis in cadence, the effect of the parameter
state above to the overall performance of a NMOS can be simulated
and analysis.
IV. The NMOS have three operation mode that is cut off, linear and
saturation. Working in each mode, the NMOS transistor characteristic
can be predicted using the corresponding equations as given in the lab
manual 1.

V. The body effect describes the changes in the threshold voltage by the
change in VSB, the source-bulk voltage. Since the body influences the
threshold voltage (when it is not tied to the source), it can be thought
of as a second gate, and is sometimes referred to as the "back gate". the
equation is as shown below:

VTN =VTo+ γ ( √VSB+2 ∅ F−√ 2 ∅ F )

VI. Another important parameter of the MOSFET is the gm which is the

transconductance of the transistor. It is used to describe the ability of
the device to convert a voltage to current.
VII. From the IDS vs VGS graph, the drain current can be increased by
applying a larger VGS. But this will reach a limit which limit by the VDS
source.
VIII. Body effect is one of the considerations that have to be taking into
account when dealing with MOSFET. As illustrated in IDS vs VGS
graph, the more negative the VSB voltage the higher the current will be
but when the more positive the VSB, the lower the current will be.
Although there it a preferable that the substrate to be connected to the
most negative part in the design, there is a trade off that is the
depletion layer will be reduce and maybe causing short circuit between
transistor in the design if the transistor is too near each other.
 IX. As predicted by equation 4, the gm is proportional to the overdrive
voltage. This is because when overdrive voltage increase, the channel
of the MOSFET becomes wider and deeper and causing a larger
current can flow through the MOSFET.
X. As shown by the gm vs IDS graph, the gm become saturation because of
the channel in the MOSFET become pinched off when saturation is
reach and causing only a fixed amount of current can flow through at a
time.
XI. As shown by the gm vs VGS – VTN graph, the gm is inversely
proportional to the overdrive voltage because as the VGS increased, the
channel conductivity increased but the current is still constant casing
the gm to decreased with increased in overdrive voltage.

4 Conclusion
As conclusion, the semiconductor characteristic and behavior of the NMOS
transistor can be related to its input and output terminal voltage and current.IDS
depend on VGS, VDS and VSB. While gm depend on IDS and Voverdrive.