1MBC15-060,1MB15D-060, Molded IGBT

600V / 15A
Molded Package

Features
· Small molded package
· Low power loss
· Soft switching with low switching surge and noise
· High reliability, high ruggedness (RBSOA, SCSOA etc.)
· Comprehensive line-up

Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply

Maximum ratings and characteristics Equivalent Circuit Schematic

Absolute maximum ratings (at Tc=25°C unless otherwise specified)

1MBC15-060 / IGBT
IGBT
Item Symbol Rating Unit
Collector-Emitter voltage VCES 600 V C:Collector

Gate-Emitter voltaga VGES ±20 V

Collector DC Tc=25°C IC25 24 A
current Tc=80°C IC80 15 A
1ms Tc=25°C Icp 96 A
G:Gate
Max. power dissipation(IGBT) PC 90 W
Operating temperature Tj +150 °C
Storage temperature Tstg -40 to +150 °C
E:Emitter
Screw torque - 40 N·m

1MB15D-060 / IGBT+FWD
IGBT + FWD
Item Symbol Rating Unit
Collector-Emitter voltage VCES 600 V
C:Collector
Gate-Emitter voltaga VGES ±20 V
Collector DC Tc=25°C IC25 33 A
current Tc=100°C IC100 15 A
1ms Tc=25°C Icp 132 A
Max. power dissipation (IGBT) PC 120 W G:Gate
Max. power dissipation (FWD) PC 60 W
Operating temperature Tj +150 °C
Storage temperature Tstg -40 to +150 °C E:Emitter
Screw torque - 50 N·m
1MBC15-060, 1MB15D-060 Molded IGBT

Electrical characteristics (at Tj=25°C unless otherwise specified)

1MBC15-060 / IGBT
Item Symbol Characteristics Conditions Unit
Min. Typ. Max.
Zero gate voltage collector current ICES – – 1.0 VGE=0V, VCE=600V mA
Gate-Emitter leakage current IGES – – 20 VCE=0V, VGE=±20V µA
Gate-Emitter threshold voltage VGE(th) 5.5 – 8.5 VCE=20V, IC=15mA V
Collector-Emitter saturation voltage VCE(sat) – – 3.0 VGE=15V, IC=15A V
Input capacitance Cies – 1000 – VGE=0V pF
Output capacitance Coes – 200 – VCE=10V
Reverse transfer capacitance Cres – 40 – f=1MHz
Turn-on time ton – – 1.2 VCC=300V IC=15A µs
tr – – 0.6 VGE=±15V
Turn-off time toff – – 1.0 RG=160 ohm
tf – – 0.35 (Half Bridge)

1MB15D-060 / IGBT+FWD
Item Symbol Characteristics Conditions Unit
Min. Typ. Max.
Zero gate voltage collector current ICES – – 1.0 VGE=0V, VCE=600V mA
Gate-Emitter leakage current IGES – – 20 VCE=0V, VGE=±20V µA
Gate-Emitter threshold voltage VGE(th) 5.5 – 8.5 VCE=20V, IC=15mA V
Collector-Emitter saturation voltage VCE(sat) – – 3.0 VGE=15V, IC=15A V
Input capacitance Cies – 1000 – VGE=0V pF
Output capacitance Coes – 200 – V CE=10V
Reverse transfer capacitance Cres – 40 – f=1MHz
Turn-on time ton – – 1.2 VCC=300V, I C=15A µs
tr – – 0.6 VGE=±15V
Turn-off time toff – – 1.0 RG=160 ohm
tf – – 0.35 (Half Bridge)
FWD forward on voltage VF – – 3.0 IF=15A, VGE=0V V
Reverse recovery time trr – – 0.3 IF=15A, VGE=-10V, di/dt=100A/µs µs

Thermal resistance characteristics

1MBC15-060 / IGBT
Item Symbol Characteristics Conditions Unit
Min. Typ. Max.
Thermal resistance Rth(j-c) – – 1.38 IGBT °C/W

1MB15D-060 / IGBT+FWD
Item Symbol Characteristics Conditions Unit
Min. Typ. Max.
Thermal resistance Rth(j-c) – – 1.04 IGBT °C/W
Rth(j-c) – – 2.08 FWD °C/W

Outline drawings, mm
1MBC15-060 1MB15D-060
TO-220AB TO-3P
1MBC15-060, 1MB15D-060 Molded IGBT
Characteristics
1MBC15-060,1MB15D-060

Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage
Tj=25°C Tj=125°C

50 50

40 40
Collector current : Ic [A]

Collector current : Ic [A]

30 30

20 20

10 10

0 0
0 1 2 3 4 5 0 1 2 3 4 5
Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V]

Collector-Emitter vs. Gate-Emitter voltage Collector-Emitter vs. Gate-Emitter voltage

Tj=25°C Tj=125°C

10 10
Collector-Emitter voltage : VCE [V]

Collector-Emitter voltage : VCE [V]

8 8

6 6

4 4

2 2

0 0
0 5 10 15 20 0 5 10 15 20
Gate-Emitter voltage : VGE [V] Gate-Emitter voltage : VGE [V]

Switching time vs. Collector current Switching time vs. Collector current
Vcc=300V, RG=160 ohm, VGE=±15V, Tj=25°C Vcc=300V, RG=160 ohm, VGE=±15V, Tj=125°C
1000 1000
Switching time : ton, tr, toff, tf [n sec.]
Switching time : ton, tr, toff, tf [n sec.]

100 100

10 10
0 5 10 15 20 25 30 0 5 10 15 20 25 30
Collector current : Ic [A] Collector current : Ic [A]
1MBC15-060, 1MB15D-060 IGBT Module
Characteristics
1MBC15-060,1MB15D-060

Switching time vs. RG Switching time vs. RG

Vcc=300V, Ic=15A, VGE=±15V, Tj=25°C Vcc=300V, Ic=15A, VGE=±15V, Tj=125°C

Switching time : ton, tr, toff, tf [n sec.]

Switching time : ton, tr, toff, tf [n sec.]

1000 1000

100 100

10 10
0 100 200 300 400 500 600 700 800 0 100 200 300 400 500 600 700 800
Gate resistance : RG [ohm] Gate resistance : RG [ohm]

Dynamic input characteristics Capacitance vs. Collector-Emitter voltage

Tj=25°C Tj=25°C
500 25

400
Collector-Emitter voltage : VCE [V]

20
1000
Capacitance : Cies, Coes, Cres [nF]
Gate-Emitter voltage : VGE [V]

300 15

100
200 10

100 5

10

0 0
0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30 35
Gate charge : Qg [nC] Collector-Emitter voltage : VCE [V]

Reversed biased safe operating area Typical short circuit capability

<
+VGE=15V, -VGE = 15V, Tj <
= 125°C, RG >
= 160 ohm Vcc=400V, RG=160 ohm, Tj=125°C
35 250 100

30
200 80
Short circuit time current : Isc [A]

25
Collector current : Ic [A]

Short circuit time : tsc [µs]

150 60
20

15
100 40

10

50 20
5

0 0 0
0 100 200 300 400 500 600 700 5 10 15 20 25
Collector-Emitter voltage : VCE [V] Gate voltage : VGE [V]
1MBC15-060, 1MB15D-060 IGBT Module

Characteristics
1MBC15-060,1MB15D-060

Transient thermal resistance

101
Thermal resistance : Rth (j-c) [°C/W]

100

10-1

10-2
10-4 10-3 10-2 10-1 100
Pulse width : PW [sec.]

1MB15D-060
Reverse recovery time vs. Forward current Reverse recovery current vs. Forward current
-di/dt=45A / µsec -di/dt=45A / µsec
4

500

3
400
reverse recovery time : trr [nsec]

reverse recovery current : Irr [A]

300
2

200

100

0 0
0 5 10 15 20 25 0 5 10 15 20 25

Forward current : IF [A] Forward current : IF [A]

Forward current vs. Foeward voltage Reverse recovery time characteristics vs. -di/dt
IF=15A, Tj=125°C
500 10

50

400 8
40
reverse recovery current : Irr [A]
reverse recovery time : trr [nsec]

300 6
30
Forward current : IF [A]

200 4
20

10 100 2

0 0 0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 50 100 150 200 250 300
Forward voltage : VF [V] -di/dt [ A / µsec ]