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TPS2376-H IEEE802.3af, 600-Ma Capable, PD Controller: 1 Features 3 Description
TPS2376-H IEEE802.3af, 600-Ma Capable, PD Controller: 1 Features 3 Description
TPS2376-H
SLVS646B – SEPTEMBER 2006 – REVISED NOVEMBER 2018
2
Data to
3 T1A Ethernet
PHY
6 T1B
VDD
DET
CLASS CBULK
To DC/DC Converter
RJ-45 23.2 .Ÿ
UVLO
SMAJ58A
0.1 µF ILIM
4 TPS2376-H PG
5 PAD
287 .Ÿ 1.62 .Ÿ
7
VSS RTN
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPS2376-H
SLVS646B – SEPTEMBER 2006 – REVISED NOVEMBER 2018 www.ti.com
Table of Contents
1 Features .................................................................. 1 9.1 Application Information............................................ 12
2 Applications ........................................................... 1 9.2 Typical Application .................................................. 14
3 Description ............................................................. 1 10 Power Supply Recommendations ..................... 15
4 Revision History..................................................... 2 10.1 Maintain Power Signature..................................... 15
10.2 DC/DC Converter Startup ..................................... 15
5 Device Comparison Table..................................... 3
10.3 Auxiliary Power Source ORing.............................. 16
6 Pin Configuration and Functions ......................... 3
11 Layout................................................................... 17
7 Specifications......................................................... 4
11.1 Layout Guidelines ................................................. 17
7.1 Absolute Maximum Ratings ..................................... 4
11.2 Layout Example .................................................... 18
7.2 ESD Ratings ............................................................ 4
11.3 Thermal Protection................................................ 18
7.3 ESD Ratings IEC ..................................................... 4
11.4 ESD....................................................................... 18
7.4 Recommended Operating Conditions....................... 4
7.5 Thermal Information ................................................. 5 12 Device and Documentation Support ................. 19
12.1 Documentation Support ....................................... 19
7.6 Electrical Characteristics.......................................... 5
12.2 Receiving Notification of Documentation Updates 19
7.7 Typical Characteristics .............................................. 7
12.3 Community Resources.......................................... 19
8 Detailed Description .............................................. 9
12.4 Trademarks ........................................................... 19
8.1 Overview ................................................................... 9
12.5 Electrostatic Discharge Caution ............................ 19
8.2 Functional Block Diagram ....................................... 10
12.6 Glossary ................................................................ 19
8.3 Feature Description................................................. 10
13 Mechanical, Packaging, and Orderable
9 Application and Implementation ........................ 12
Information ........................................................... 19
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
• Changed title from IEEE 802.3af PoE High Power PD Controller to IEEE 802.3af, 600-mA Capable, PD Controller ......... 1
• Added Device Information table, ESD Ratings table, Thermal Information table, Feature Description section,
Application and Implementation section, Power Supply Recommendations section, Device and Documentation
Support section, Mechanical, Packaging, and Orderable Information section ...................................................................... 1
• Deleted the Product Selector table see the Device Comparison table ................................................................................. 3
• Deleted Dissipation Rating Table see Thermal Information table ......................................................................................... 5
• Deleted Available Options table see Packaging Information at the end of the data sheet .................................................. 19
Rated
Device UVLO Protection Package (1)
Current
TPS2376-H Adjustable Auto-Retry DDA 600 mA
TPS2375-1 802.3af Auto-Retry PW 400 mA
TPS2377-1 Legacy Auto-Retry D 400 mA
TPS2375 802.3af Latch PW, D 400 mA
TPS2376 Adjustable Latch PW, D 400 mA
TPS2377 Legacy Latch PW, D 400 mA
DDA PACKAGE
8-Pin SOIC
Top View
1 8
ILIM VDD
2 7
CLASS UVLO
3 6
DET PG
4 5
VSS RTN
Pin Functions
PIN
NO. I/O DESCRIPTION
NAME
'76-H
Connect a resistor from CLASS to VSS to set the classification of the powered device
CLASS 2 O (PD). The IEEE classification levels and corresponding resistor values are shown in
Table 1.
DET 3 O Connect a 24.9-kΩ detection resistor from DET to VDD.
Connect a resistor from ILIM to VSS to set the start-up inrush current limit. The equation
ILIM 1 O
for calculating the resistor is shown in the detailed pin description section for ILIM.
PG 6 O Open-drain, power-good output, active high, referenced to RTN.
RTN 5 O Switched output side return line used as the low-side reference for the TPS2376-H load.
UVLO comparator input that controls pass-device turn-on and off. Connect UVLO to a
UVLO 7 I
resistor divider from VDD to VSS.
VDD 8 I Positive line from the rectified PSE provided input.
VSS 4 I Return line on the source side of the TPS2376-H from the PSE.
The PowerPad must be connected to VSS. The VSS copper on the circuit board must be
PowerPad™ — I
a large fill area to assist in heat dissipation.
7 Specifications
7.1 Absolute Maximum Ratings
(1)
over operating free-air temperature range (unless otherwise noted) , voltages are referenced to V(VSS)
MIN MAX UNIT
VDD, RTN (2), DET, PG –0.3 100
Voltage ILIM, UVLO –0.3 10 V
CLASS –0.3 12
RTN (3) Internally Limited
Current, sinking PG 0 5
DET 0 1 mA
CLASS 0 50
Current, sourcing
ILIM 0 1
TJ Maximum junction temperature range Internally Limited
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260
°C
Tstg Storage temperature –65 150
(1) Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating
conditions” is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.
(2) I(RTN) = 0
(3) SOA limited to V(RTN) = 80 V and I(RTN) = 900 mA.
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(1) Classification is tested with exact resistor values. A 1% tolerance classification resistor ensures compliance with IEEE 802.3af limits.
(2) This parameter specifies the RTN current value, as a percentage of the steady state inrush current, below which it must fall to make PG
assert (open-drain).
(3) Start with V(RTN) = 0 V, then increase V(RTN) until PG switches. Measure before thermal shutdown occurs.
Resistance - kΩ
o
TJ = 125 C
4
Current − mA
3
o
TJ = 25 C
2
1 o
TJ = -40 C
0
0 1 2 3 4 5 6 7 8 9 10 11
V(VDD) − V
V(PI) - V
21.92
11.1
21.91
11.0 21.90
−40 −20 0 20 40 60 80 100 120 −40 −20 0 20 40 60 80 100 120
o
TJ − Junction Temperature − C
o TJ − Junction Temperature − C
Figure 3. Classification Turn On Voltage vs Temperature Figure 4. Classification Turn Off Voltage vs Temperature
0.350 0.9
o
TJ = 125 C
Pass Device Resistance − W
0.300 0.8
o
TJ = 25 C
I (VDD) − mA
0.250 o 0.7
TJ = -40 C
0.200 0.6
0.150 0.5
0.100 0.4
22 27 32 37 42 47 52 57 −40 −20 0 20 40 60 80 100 120
o
VDD − V TJ − Junction Temperature − C
1.928
2.488
1.927
V(UVLO) − V
V(UVLO) − V
2.487
1.926
2.486
1.925
2.485
1.924
2.484 1.923
−40 −20 0 20 40 60 80 100 120 −40 −20 0 20 40 60 80 100 120
TJ − Junction Temperature − °C TJ − Junction Temperature − °C
778
8 Detailed Description
8.1 Overview
The following descriptions refer to the schematic of Typical Application Circuit and the Functional Block Diagram.
ILIM : A resistor from this pin to VSS sets the inrush current limit per Equation 1:
I(LIM) = 40000
R(ILIM)
(1)
where ILIM is the desired inrush current value, in Amperes, and R(ILIM) is the value of the programming resistor
from ILIM to VSS, in ohms. The practical limits on R(ILIM) are 125 kΩ to 1 MΩ. A value of 287 kΩ is
recommended for compatibility with legacy power sourcing equipment (PSE).
Inrush current limiting prevents current drawn by the bulk capacitor from causing the line voltage to sag below
the lower UVLO threshold. Adjustable inrush current limiting allows the use of arbitrarily large capacitors and also
accommodates legacy systems that require low inrush currents.
The ILIM pin must not be left open or shorted to VSS.
CLASS: Classification is implemented by means of an external resistor, R(CLASS), connected between CLASS
and VSS. The controller draws current from the input line through R(CLASS) when the input voltage lies between
13 V and 21 V. The classification currents specified in the electrical characteristics table include the bias current
flowing into VDD and any RTN leakage current.
A high power system will not meet the standard power CLASS ranges defined in IEEE 802.3af, which are shown
for reference in Table 1. An end-to-end high power system may either redefine the CLASS power, or dispense
with CLASS entirely.
The CLASS pin must not be shorted to ground.
DET: R(DET) should be connected between VDD and the DET pin when it is used. R(DET) is connected across the
input line when V(VDD) lies between 1.4 V and 11.3 V, and is disconnected when the line voltage exceeds this
range to conserve power.
The parallel combination of R(DET) and the UVLO program resistors must equal 24.9 kΩ, ±1%. Minimizing R(DET),
and maximizing the UVLO program resistors, improves efficiency during normal operation. Conversely, R(DET)
may be eliminated with the UVLO divider providing the 24.9 kΩ signature to reduce component count.
VSS: This is the input supply negative rail that serves as a local ground. The PowerPad must be connected to
this pin.
RTN: This pin provides the switched negative power rail used by the downstream circuits. The operational and
inrush current limit control current into the pin. The PG circuit monitors the RTN voltage and also uses it as the
return for the PG pin pulldown transistor. The internal MOSFET body diode clamps VSS to RTN when voltage is
present between VDD and RTN and the Power-over-Ethernet (PoE) input is not present.
PG: This pin goes to a high resistance state when the internal MOSFET that feeds the RTN pin is enabled, and
the device is not in inrush current limiting. In all other states except detection, the PG output is pulled to RTN by
the internal open-drain transistor. Performance is ensured with at least 4 V between VDD and RTN.
PG is an open-drain output, which may require a pullup resistor or other interface to the dc/dc converter. PG may
be left open if not used.
UVLO: The UVLO pin is used with an external resistor divider between VDD and VSS to set the upper and lower
UVLO thresholds. The TPS2376-H enables the output when V(UVLO) exceeds the upper UVLO threshold, and
turns it off when the input falls below the lower threshold.
The UVLO divider resistance may be used alone to provide the 24.9 kΩ detection signature, or be used in
conjunction with R(DET). Eliminating R(DET) reduces the component count at the cost of lower operating efficiency.
The Typical Application Circuit demonstrates the elimination of R(DET).
VDD: This is the positive input supply that is also common to downstream load circuits. This pin provides
operating power and allows the controller to monitor the line voltage to determine the mode of operation.
Detection DET
Comparator 3
11.3 V
And 9.5 V +
VDD
8 ±
CLASS
Classification 10-V
Comparator 2
Regulator
21.9 V + PG
And 21.1 V 6
± PG Comparator Delay
150 µS
1.5 V +
And 10 V
±
Thermal Shutdown
S Q
1 = Inrush
R
UVLO RTN
Comp. 5
2.49 V +
UVLO And 11.93 V
7 ±
Current
1
Mirror 36 mV + EN
1:1
2.5 V ± Current
+ 0
UVLO Limit Amp.
1 ±
800 PŸ
VSS 50 m
4
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
Proper Operation
Maximum Input
Voltage Falling
Voltage Rising
Classification
Classification
Lower Limit -
Lower Limit
Upper Limit
Lower Limit
Upper Limit
Detection
Detection
Voltage
PD Powered
Operational Mode
Idle
Classification
Detection
V(VDD)
V(CU_H)
1.4 V V(CL_ON) V(CL_OFF) V(UVLO_F) V(UVLO_R)
9.1.2 Detection
The 25 kΩ PD signature is measured by applying two voltages between 2.7 V to 10.1 V, that are at least 1 V
apart, to the PD's PI and measuring the current. The resistance is calculated as a ΔV/ΔI, with an acceptable
range of 23.75 kΩ to 26.25 kΩ.
The TPS2376-H is in detection mode whenever the supply voltage is below the lower classification threshold.
The TPS2376-H draws a minimum of bias power in this condition, while PG and RTN are high impedance and
the circuits associated with ILIM and CLASS are disabled. The DET pin is pulled to VSS during detection.
Current flowing through R(DET) to VSS shown in Figure 13 produces the detection signature.
9.1.3 Classification
The classification process applies a voltage between 14.5 V and 20.5 V, for a maximum of 75 ms, to the input of
the PD, which in turn draws a fixed current set by R(CLASS). An 802.3af PSE measures the PD current to
determine which of the five available classes shown in Table 1 that the PD is signaling. The total current drawn
from the PSE during classification is the sum of bias currents and current through R(CLASS). The TPS2376-H
disconnects R(CLASS) at voltages above the classification range to avoid excessive power dissipation see
Figure 11 and Figure 12.
A high power end-to-end system may choose to not implement classification, or redefine the power associated
with each class. Low-voltage systems, for example 24 V, may not be able to use CLASS because the operational
voltage may lie within the classification voltage range. This would cause the TPS2376-H classification circuits to
dissipate power continuously.
The power rating of the class resistor should be chosen so that it is not overstressed for the required 75-ms
classification period, during which 10 V is applied. A higher wattage resistor might be required to withstand
testing over longer time periods.
2
Data to
3 T1A Ethernet
PHY
6 T1B
VDD
DET
CLASS CBULK
To DC/DC Converter
RJ-45 23.2 .Ÿ
UVLO
SMAJ58A
0.1 µF ILIM
4 TPS2376-H PG
5 PAD
287 .Ÿ 1.62 .Ÿ
7
VSS RTN
9.2.1.2 Magnetics
A high-power PoE system places additional burden on power extraction from data pairs. Data transmission
properties must be maintained while carrying higher current and withstanding higher difference current between
the conductors in a pair. This difference current is the result of unbalanced resistances between the conductors
of a pair (see IEEE 802.3af annex 33E).
Either a higher current center-tapped transformer as shown in Figure 13, or the addition of a center-tapped
inductor, can be implemented. Proper termination is required around the transformer to provide correct
impedance matching and to avoid radiated and conducted emissions.
14 Submit Documentation Feedback Copyright © 2006–2018, Texas Instruments Incorporated
~ +
VDD
Main
~ ± 0.1 …F R(DET)
DC/DC
DC/DC
RJ-45
Converter
DET 22 …F Converter Output
SMAJ58A TPS237X
UCC3809
ILIM Or
~ + R(ILIM) UCC3813
CLASS
~ ± RTN
VSS
Option 3 R(CLASS)
For Option 2.
The Capacitor Must Be
Auxiliary Option 2 Right At The Output
Power To Control The
Input Transients.
11 Layout
0.01 mF
R(CLASS)
R(DET)
VSS
COPPER FILL
TPS2376-H RTN COPPER FILL
11.4 ESD
The TPS2376-H has been tested using the surge of EN61000-4-2 in evaluation circuit similar to the Typical
Application Circuit. The levels used were 8-kV contact discharge and 15-kV air discharge. Surges were applied
between the RJ-45 and the outputs, and between an auxiliary power input jack and the dc outputs. No failures
were observed.
ESD requirements for a unit that incorporates the TPS2376-H have much broader scope and operational
implications than those used in TI’s testing. Unit level requirements should not be confused with EVM testing that
only validated the TPS2376-H.
12.4 Trademarks
PowerPad, E2E are trademarks of Texas Instruments.
12.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
12.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
www.ti.com 9-Nov-2018
PACKAGING INFORMATION
Orderable Device Status Package Type Package Pins Package Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) (6) (3) (4/5)
TPS2376DDA-H ACTIVE SO PowerPAD DDA 8 75 Green (RoHS CU NIPDAU Level-1-260C-UNLIM -40 to 85 2376H
& no Sb/Br)
TPS2376DDA-HG4 ACTIVE SO PowerPAD DDA 8 75 Green (RoHS CU NIPDAU Level-1-260C-UNLIM -40 to 85 2376H
& no Sb/Br)
TPS2376DDAR-H ACTIVE SO PowerPAD DDA 8 2500 Green (RoHS CU NIPDAU Level-1-260C-UNLIM -40 to 85 2376H
& no Sb/Br)
TPS2376DDAR-HG4 ACTIVE SO PowerPAD DDA 8 2500 Green (RoHS CU NIPDAU Level-1-260C-UNLIM -40 to 85 2376H
& no Sb/Br)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com 9-Nov-2018
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com 9-Nov-2018
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com 9-Nov-2018
Pack Materials-Page 2
GENERIC PACKAGE VIEW
DDA 8 PowerPAD TM SOIC - 1.7 mm max height
PLASTIC SMALL OUTLINE
Images above are just a representation of the package family, actual package may vary.
Refer to the product data sheet for package details.
4202561/G
PACKAGE OUTLINE
DDA0008J SCALE 2.400
PowerPAD TM SOIC - 1.7 mm max height
PLASTIC SMALL OUTLINE
C
6.2
TYP SEATING PLANE
5.8
A PIN 1 ID
AREA 0.1 C
6X 1.27
8
1
5.0 2X
4.8 3.81
NOTE 3
4
5
0.51
8X
4.0 0.31
B 1.7 MAX
3.8 0.1 C A B
NOTE 4
0.25
TYP
0.10
SEE DETAIL A
4 5
EXPOSED
THERMAL PAD
3.1 0.25
2.5 GAGE PLANE
0.15
0 -8 1.27 0.00
1 8
0.40
DETAIL A
2.6 TYPICAL
2.0
4221637/B 03/2016
PowerPAD is a trademark of Texas Instruments.
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0.15 mm per side.
4. This dimension does not include interlead flash. Interlead flash shall not exceed 0.25 mm per side.
5. Reference JEDEC registration MS-012, variation BA.
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EXAMPLE BOARD LAYOUT
DDA0008J PowerPAD TM SOIC - 1.7 mm max height
PLASTIC SMALL OUTLINE
(2.95)
NOTE 9
SOLDER MASK
(2.6) DEFINED PAD
SOLDER MASK
OPENING
8X (1.55) SEE DETAILS
1
8
8X (0.6)
(3.1)
SYMM SOLDER MASK
(1.3) OPENING
TYP (4.9)
NOTE 9
6X (1.27)
5
4
( 0.2) TYP
VIA SYMM METAL COVERED
BY SOLDER MASK
(1.3) TYP
(5.4)
4221637/B 03/2016
NOTES: (continued)
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EXAMPLE STENCIL DESIGN
DDA0008J PowerPAD TM SOIC - 1.7 mm max height
PLASTIC SMALL OUTLINE
(2.6)
BASED ON
0.125 THICK
STENCIL
8X (1.55)
1
8
8X (0.6)
(3.1)
SYMM
BASED ON
0.127 THICK
STENCIL
6X (1.27)
5
4
4221637/B 03/2016
NOTES: (continued)
10. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
11. Board assembly site may have different recommendations for stencil design.
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