BJT T

BJT, Relación salida - entrada

unction (1) BJTBJT
BJT Transfer
Transfer
Transfer KVLFunction
BE -Function (1
: v = R i (1
+v i B B
Considere el siguiente circuito con BJT
BJT Transfer
Las LVK resultan:
BJT Transfer CEFunction
- KVL : V (1)
Function =(1)
R i CC C C

BEBE
- KVL BE: - KVL
v = R : vi i =+ Rv B iB + v BE
- KVL : i vi = BRBBiB + BE vBE
BE CE
- KVL- KVL
: : vi v:= =RVBRCC = vRBEvC iC + vCE
i +
CECE
- KVLBE
- KVL-: KVL VCC= i=RCRCBiBCiiBC+++
:VCC vBEvCE
CE
Cut - off : iB = 0 and vB
CE - KVL : VCC = RC iC + vCE
CE - KVL : VCC = RCEniCcorte:
+ vCE
BE - KVL : v = R × 0 + i B
Cut - off : iB = 0 and vBE < VD 0
CutCut
- off :- off
-Cut
Cutoff iB: i=
:off 0i=0=0and
iB= and
and vBE
vvBE <<<V VV
< iC = 0
BE - KVLB: vi = RB ×
- :
B 0 and v
BE BE 0 +DgV v0D00BE →
D0D
vBE = vi
: : v:i v= R× 0×B 0×++0+v+vBE
vBEvBEBE→ =
0 :i = BBR× →
BEBE- KVL
- KVL
BE BE- KVL viR
v=iBR= → →vvBE vvBE==v=i vviv-i i KVL : V = R × 0
BECE
i -=KVL
C
BE CC C
iC 0=iC0i=CCE
iC = 00
=
- KVL : VCC = RC × 0 + vCE → vCE = VCC
CE - KVL
CE - KVL VCC= =
: : VCC RCR× 0 + v vCE→→vCE
C × 0 +CE vCE= =
VCC
VCC
CECE
- KVL VCC= =RCRC××0 0++vCE
: :VCC
- KVL vCE →
→ vvCE
For
CE ==VVvCC
i < VD 0 → BJT in C
CC

For For
For <iDV<
vi v<i vV VD 0BJT
0D 0 →→
→inBJT
BJT in CutoffiB
inCutoff
Cutoff = 0, iC = 0, vCE = VCC
viiBv<
ForFor i= <,D=
iiV
=
0 0V0,iD0 →=i0→
0,i= v, BJT
BJT
C,0= v0,=in=in
vV Cutoff
VCutoff
= VCC
B B C C CECE CE
CCCC
iB 0=, 0,iC i=
iB = =,0v, CE
C 0 vCE= =VCC
VCC
BEON
BE ON:BE
:vBE = =VV
vBEON andi i ≥≥00
BE =BVBD 0 an
D:0D 0vand

BE vBEi =R=
ON: ::: vvvBE =RBV and iiB→
:v =V and i ≥ 0 BE
BE
BE - ON
KVL
- KVLBE - KVL i = :B×DD×i00BviB+and
V =+VVDR0D 0→ ×
B
 B BE BJT
D 0 Transfer Function (1)
CE - KVL : VCC = RC iC + vCE
KVL : vi = RB × 0 + vBE → vBE = vi
BE - KVL : vi = RB iB + vBE
BJT Transfer Function (3) Functio
BJT Transfer
0 CutCE : :iB V=CC0= Rand
- KVL
- off + vCE< V
C iC v BE - KVL : vi = RB iB + v BE
BE D0
vi −CE
VD 0- KVL :
=BER-CKVL
× 0ON :+ vvi: =vR =× 0V+ vBEand→ B =
VCC = RC iC + vCE
CEBEB→ Dv0 CE = VviBE
KVL : VCC BE = vi
Cut - off : i = 0 and v < V
CC RB
BJT, Relación
C
BE - KVL :salida
i =
v = R × 0-+ entrada
v → v =v
0 B BE D0
Cut - off : BJT Transfer Function
iB = 0 and v BE < VD 0

nction
v <V
BJT
(1) BJT Transfer
Transfer
→ BJT in Cutoff
Function
Function (2) (2) CE -: KVL
CE - KVL
iC = 0
× 0=+ R
: RVC CC
VCC = vCE C +vvCE
C i→
i
CE = VCC
B
BE - KVL :
BE BE i

iC = 0
v = R × 0 + v BE → v BE = vi
Las LVKi resultan:
B

i D0 CE - KVL : VCC = RC × 0 + vCE → vCE = VCC

Considere elFor v <vV− V
siguiente vi −BJT
VDcon
circuito
→ BJT BE - KVL vi =: RV
CE -:KVL iB +
=v C × 0 + vCE
RBE → vCE = VCC
ON= BE ,= Vv and= V
: v = V and = i = BJT 0 in Cutoff B CC
0, BEiBE : v0 n : Transfer Function
< β: i V (2)
ON i Saturaatio i i D0 D0
C BEDCE
0 v = V andCE -iKVL
D 0 B CC B
R =R C iC + vCE BJT Transfer Fun
BEiBON= 0: , vBE
R
iB = 0, vi i<C V=DB00,→vCE
For
iC == V0D, 0vCE
and= VCC
iB =
B =in
BJT
vi − VD 0
Cutoff
VCC CE
sat c For vB <CC
V →
BJT
BJT in Cutoff BJT Transfe
Transfer Fun i D0

i = 0, ViBE=- V BJT Transfer Functio

CE - KVL : V =
CE - KVL : VCC = RCCC iC +CvCE
R i +
CEC - KVL
v : V =RRB BJT i BJT Transfer
+ VTransfer
BJT
en
= Function
→ i Transfer
0, directa
CCFunction
sat
v =V
(2)BJT(2)
(2)
Function Transfer Fu B C CE CC

CC BJT Transfer
: v C=Function
and i(2)≥ 0
CE
CE - KVL : VCC = RC iC + vCE BEC CON
BJT Transfer Function
sat V (2) BE Cut
BE ON
ONv:i-− voff
BE =
:: vBE
VBE i ==
ON
andD
V00
VRD
i:g0≥
v
andvBE
and
0 = V
iB B≥ON
< 0V : v = V vi −
and i = and
v
BE
VD 0
− VON i = :
vi − VD 0
v BE = V
i −
vBE
V V
D 0 D 0D 0 B v −BE V BC BE
ON : v BED 0
= V D 0 BE B
and v i −
D0
=
V i DB0
BEBE ONON : vBE : vv=BE V = V and and ivB=i −=i = iDB0 =andvi −iBVB=DR0R v − V RB
ON0 D 0: v VBV D 0and i:B = vBE=ONi D 0
: BE
vBE ON = VD:0 vvand
BE D 0 i B D 0
i − =VVV
v −V
i D 0
V −
× + → =
BE D
BE ON : v BE = VBE ON : v = V and D 0 i BE =
B BE - BE BE - KVL
R :B−vV
- KVL R :RB vi×i Ri=BB+RVR 0
×→iBCE v
i+ V D 0 →: iBE
v BV= =
v
RV
and i = D0
V BE g Ri B BE - KVL : vi =
i = B =
i D 0 B
BEB D0 KVL B BB BE
+R
BE - KVL : v = R × i + V - KVL
→ i = R i Bv
D0

icvβ VCC: =VR C C+ iv

g i D 0
βActive :c ≥<V ≥iB→ > VV =R=CVRiDC: 0+iViC+CvCCCE+=v=CE0RC iC +CE
RB - KVL
βiciB=- KVL B CC
-:KVL =VBi0iR
sat RBC C CE
andiB v:CEiand iβBRCE -v
D0
Active
Active : ic: = CE =CE VCE
-Dand
KVL KVLv:CE : CC
≥
CE V VD-=CC
0KVL v
i CE CE
- KVL
B CE: V
-B KVL = R: CR
D + =v R
CC
CCE +ivBCE + ivBCE≥ 0 → vi ≥ V
β
D 0= 0 + i IH CC
CC = R + vi CE≥ activa
VCC CE - KVL
i − VD
vWinter
C iC: v
VCE C iC zona
BJT → R /
≥
iB ≥ 0Ci → DBv0 i ≥ VD 0
0 v RV
CE CC C C
CC
R
CE C
BJT saturación
C

vDi 0−F. Najmabadi,

F. Najmabadi, ECE65, Winter 2012
B
vi −F.VNajmabadi,VDi0C ECE65, BJT Transfer Function (2) B
β ×Winter
= ECE65, 0
2012 CE - KVL : VCC = RC × 0 + vCE → vCE = VCC
iC =iCβ =× β × Active : i =RβB i Active
2012
Saturaatio nV : viCE =β V and ic < β
BE 2012ON RB : RvBBE CE =V -DKVLand
c
: Active
V i= =
B andActive
: viiic −
R
:
v :ic≥
CEV Active
= i
V β
+= vβCEDi0B →Band
c =
D0
i β
B i i ≥ 0 → v ≥V
and and v
: i =Vβ iB and
B
vCE v=CEVc≥
CE
CC - DR
v ≥
CE VV≥D
0C iC i
g0V D 0 Saturaatio
Saturaatio
vCE ≥DV0D 0 n
Saturaatio :
n :
Saturaatio nvv :
CE
CE =nv V
:V
CE sat
sat =
v and
CE and
=
sat V c
sat
<
andi c <
and i c
B β<
sat
ici β
B< iβB i B
E65, Winter vi0− VD 0 CC B C C R v −vV− D 0VD 0 =+iR iV +-VVVsatVCC VV V-isat
- satVs
iC = β × iC =iCvβi=− ×VβVCCiD×B0−iV vi − VV For vi < VCE → -BJT : VCE
in -Cutoff -=VKVL :+ V=V → C= C→ = -→
−
CC
CE KVL CE VKVL R: C = iCCC
V R + iV CV → i=Csat CC
CECE -CE
KVL - KVL
- :KVLVCC: =:VRCC vCV i= ≥+R
Vv RR i →+
→ i vv
v = ≤ β=
V→
× V V
v
+ - R = Ri V V
iRD 0=
C - R i β × Dg 0 D 0 - KVLCE - :KVL :
CC = R
CC i R C+ i
V CC
sat
C C C →
sat i
sat i
= R
C
CC
R
C

= DR0C + < =viVRCC B → BJT in saturation

= i + v CC D 0 R
CE - KVL : For VCC V
C C CE C
B CECE CC CE C C CC C C CC C C sat C
CECC D0 C CCi D
CE 0
iC + RβBvRC / → B B
RB vCE i -= RC0,iC iC = 0, vCE = VCC
C
RC C C

VCC − VVDCC − VCED 0CE

0CE - KVL
- KVLβ- KVL
RCC
V: CCV− C V/=
: V
CE :R
CE CCV
RB-CC
=KVL
i +
R=C R i :C +iCVvCE
vCCE →
B + v=CE
CC v
→R→ vCEv= CEV=
C iC + vCE i →
CCV -CC
CE = VCC - RC ciC i <Bβ ci →
R- RiCC i=C V - R i
< CβvCE i → i <CCviβci > <iBCVβ→ BV→
Ci =vV
V −V
>0V+vIHi CC>
=VV Vsat
V+VDIH
g0 − +
VCCV− Vsat
=VV− + CC
V − Vsa
≥ VD 0 v:i→
vCE v≥CEVActive
D0 →
v≤CEVvD≥i0 V
ic =
≤+DVβ0D 0i→+ vand i ≤ Vv D0 +≥ V
D0 C C
VCCV−CCV−D 0VD 0 Vi < − V β i c
→ B
v > V
v IH>
i
=
i D
V
IH = V
+ β
CC
βDR0 CCC/ RB βsat
sat
RC / RBβ R / R
D 0

β R B
/ R β R
v C /
≥
vRV
CE
B
v ≥ Vβ
→
≥ RVD
v
→0 /
CE CE D 0 CD 0 vBi ≥i V
R
≤
→v
VCE
≤v
+
V ≤V V +
D 0CCD →
D 0
− +
0 VD V
βRCC vβR 0i ≤ −V VV +
/ R / DRg0 β RBJT
D 0
CCc D 0 B i IH D 0
BE β ON
R
R
/: R
C
v
/ RB
= V
C
an
B

v − VD 0 C B CE D 0 For ViV ≤Dv0 ≤ V

g 0 +/ RC C B B →
βVDR C / Rin B active
C BBE D0
iC = β × i Dg0 i C βRC / RB
B
RB
VCC − VD 0 V − VD 0VCC − VBE = RB ×
For V ≤ v ≤ V + → BJT For inV active+ForCCVV D 0 + −< V vi V→ D0
CC BJT
<-V
− vKVLin0→ BJT: in
saturation vi saturatio
CE - KVL : VCC = RC iC + vCE →D 0vCE i= VCC D 0- R i
β RCC / RB
C VCCV− For
V −
D
V
0
VV 0D V
β RFor
+− / R
CC
C − VB D 0
V β R +
D 0/ R
iD
< vi → BJT iin saturation< v → BJT in
−VVD 0− V VCCFor − VVDD00 ≤ vi ≤D 0VD 0 +i For
For For V V ≤ v ≤ ≤v
ForV ≤ V V
V + − +V
≤ v
CC
≤
D0 D
V →
+ →
0 BJT
CC V
BJT in
βR / R D0active
0in active
→
C
β
BJT
B
R in/ R
active
V
/+RB β RC / RCB < Bvi i →
CC D
D00 β RV C BJT B in saturation
DC0→
D 0 i D 0CC D 0
β D 0BJT in active
D
≤ ≤ + → ≥ → vi ≥ VD 0
i/R
CR
vCE ≥ VD 0 → vi ≤ V
For V For D≤ 0vV ≤
+ CC
V v+ CC
D 0βDR0 C i / RBD 0V D0
→ BJT in active BJT in active
β R / R B
β R / R B 0
R / R βR / R
F. Najmabadi, ECE65, D 0 Winteri 2012
F. Najmabadi, ECE65, Winterβ2012 F. Najmabadi, ECE65, Winter C
2012 B C B
C B C B
F. Najmabadi, ECE65, Winter 2012

VCC − VD 0 F. Najmabadi, ECE65, Winter 2012

v =V and i ≥ 0 F.For 0 ≤
VDECE65, vi ≤ VD2012 + → BJT in active
F. Najmabadi, ECE65, Winter 2012
Najmabadi,
F. Najmabadi, Winter
ECE65, 2012
Winter
F. Najmabadi, ECE65, WinterF. 2012
Najmabadi, ECE65, β
0
R 2012
Winter /R
 vi < VD 0 → BJT in Cutoff
VCC − VD 0
VD 0 ≤ vi ≤ VD 0 + → BJT in active
βRC / RB
BJT, RelaciónBJT Transfer
salida Function
- entrada
V −V
(4)
V + CC sat
< vi → BJT in deep saturation
vi < VVDg0 → BJTDin βRC / RB
0 Cutoff

VCC − VVD g0
VVDg0 ≤ vi ≤ VVDg0 + → BJT in active
βRC / RB
VCC − Vsat
VVDg0 + < vi → BJT in deep saturation
βRC / RB

CORTE ACTIVA SATURACIÓN

BJT Transfer
vi < VD 0 → BJT in Cu
VCC − VD 0
VD 0 ≤ vi ≤ VD 0 + → BJT in act
βRC / RB
Vg VCC − Vsat
=VVDg0 + < vi → BJT in dee
βRC / RB

F. Najmabadi, ECE65, Winter 2012 F. Najmabadi, ECE65, Winter 2012

 BJT Transfer Function (4)
BJT transfer function on the load line
<V → BJT in Cutoff
BJT, Recta de vcarga i D0

V − VD 0
VD 0 ≤ vi ≤ VD 0 + CC → BJT in active
Saturación : VIH < vi
Saturation β RC / R B

iB Incrementa VCC − Vsat

but iCVunchanged
increasespero D0 + <Recta → (LVK-CE)
No cambia vi Line
Load (CE BJT in deep
- KVL ) saturation
de carga
βRC / RB
vCE = VCC − RC iC

CORTE ACTIVA SATURACIÓN

Active D 0 ≤ vi ≤ VIH
Activa : VV Cut − off :
Corte
g Corte
iB F.&Najmabadi,
iC increase
Ambas together
crecen
ECE65, Winter 2012
vi < VVDg0

F. Najmabadi, ECE65, Winter 2012

 BJT, como interruptor (switch)
BJT as a switch
La carga
Load se coloca
is placed in
en el circuito del
collector
colector
circuit

Use: Logic gate can turn loads ON (BJT in saturation) or OFF

☑ La entrada Vi (puerta lógica) PRENDE (ON) o APAGA (OFF) al BJT
(BJT in cut-off)
☑ iC está únicamente determinada por el circuito CE (vCE = Vsat)
ic is uniquely set by CE circuit (as vce = Vsat)
☑ RB se elige de manera que el BJT entre en saturación con un amplio margen iB = 0.2 iC
RB is chosen such that BJT is in deep saturation with a wide /b
margin (e.g., iB = 0.2 ic /β)

*Lab 4 circuit
F. Najmabadi, ECE65, Winter 2012 Solved in Lecture notes (problems 12 & 13)
 vi < VD 0 → BJT in Cutoff
VCC − VD 0
VD 0 ≤ vi ≤ VD 0 + → BJT in active
BJT as a Digital GateβRC / RB
VCC − Vsat
BJT,BJT
como
as compuerta VD 0 +
digital
a Digital Gate < vi → BJT in deep saturation
βRC / RB
Resistor-Transistor logic (RTL)
Resistor-Transistor logic (RTL)
Compuerta NOT
RTL NOT gate (VLRTL=NOR
TL NOT gate (VL = Vsat , VH = VCC)
Vgate*
sat , VH RTL
= NAND
VCCgate*
) RTL NOR gate* RTL N

CORTE ACTIVA SATURACIÓN

her variants: Diode-transistor logic (DTL) and transistor-transistor logic (TTL)

T logic gates are not used anymore except for high-speed emitter-coupled
gic circuits
Low speed (switching to saturation is quite slow).
Large space and power requirements on ICs Vg
ECE65, Winter 2012 *Solved in Lecture notes (problems 14 & 15)
Other variants: F.Diode-transistor
Najmabadi, ECE65, Winter 2012 logic (DTL) and transistor-transistor
BJT logic gates are not used anymore except for high-speed emitter-c
logic circuits
o Low speed (switching to saturation is quite slow).
as a Digital Gate BJT as a Digital Gate
a Digital Gate Resistor-Transistor logic (RTL)

BJT, como
stor-Transistor compuerta
logic (RTL) digital
RTL NOT gate (V L = Vsat , VH = VCC) RTL NOR gate* RTL NAND g

ransistor logic (RTL)

Compuerta NOR Compuerta NAND
=) VCC) RTL NOR gate*
RTL NOR gate*
RTL NAND gate*
RTL NAND gate*
C

Other variants: Diode-transistor logic (DTL) and transistor-transistor logic (

BJT logic gates are not used anymore except for high-speed emitter-couple
logic circuits
o Low speed (switching to saturation is quite slow).
o Large space and power requirements on ICs
F. Najmabadi, ECE65, Winter 2012 *Solved in Lecture notes (problems 14

Participación
logic (DTL) and transistor-transistor logic (TTL)
more
sistorexcept
logicfor high-speed
(DTL) emitter-coupled
and transistor-transistor logic (TTL)
anymore
ion except
is quite slow). for high-speed emitter-coupled
ments on ICs