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4V Drive NCH MOSFET: Data Sheet
4V Drive NCH MOSFET: Data Sheet
1.5
Features
1) Low on-resistance.
5.5
9.5
1.5
0.9
2) Fast switching speed.
2.5
0.75
3) Drive circuits can be simple. 0.65
0.8Min.
0.9 2.3
3) Parallel use is easy. (1) (2) (3) 2.3 0.5
1.0
Applications
Switching
Thermal resistance
Parameter Symbol Limits Unit
Channel to Case Rth (ch-c) * 8.33 °C / W
* T c=25C
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© 2014 ROHM Co., Ltd. All rights reserved. 1/6 2014.02 - Rev.B
DataSheet
RSD050N06
Electrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Gate-source leakage IGSS - - 10 A VGS=20V, VDS=0V
Drain-source breakdown voltage V(BR)DSS 60 - - V ID=1mA, VGS=0V
Zero gate voltage drain current IDSS - - 1 A VDS=60V, VGS=0V
Gate threshold voltage VGS (th) 1.0 - 3.0 V VDS=10V, ID=1mA
- 78 109 ID=5.0A, VGS=10V
Static drain-source on-state
RDS (on)* - 94 131 m ID=5.0A, VGS=4.5V
resistance
- 100 140 ID=5.0A, VGS=4.0V
Forward transfer admittance l Yfs l* 3.5 - - S ID=5.0A, VDS=10V
Input capacitance Ciss - 290 - pF VDS=10V
Output capacitance Coss - 90 - pF VGS=0V
Reverse transfer capacitance Crss - 35 - pF f=1MHz
Turn-on delay time td(on) * - 8 - ns ID=2.5A, VDD 30V
Rise time tr * - 17 - ns VGS=10V
Turn-off delay time td(off) * - 26 - ns RL=12
Fall time tf * - 8 - ns RG=10
Total gate charge Qg * - 8.0 - nC VDD 30V
Gate-source charge Qgs * - 1.4 - nC ID=5.0A
Gate-drain charge Qgd * - 1.4 - nC VGS=10V
*Pulsed
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© 2014 ROHM Co., Ltd. All rights reserved. 2/6 2014.02 - Rev.B
DataSheet
RSD050N06
Electrical characteristic curves (Ta=25C)
Fig.1 Typical Output Characteristics (Ⅰ) Fig.2 Typical Output Characteristics (Ⅱ)
15.0 15.0
Ta=25°C Ta=25°C
pulsed pulsed
12.5 12.5
VGS=10.0V
VGS=10.0V
VGS=4.5V
Drain Current : ID [A]
VGS=3.5V
5.0 5.0
2.5 2.5
VGS=3.0V
0.0 0.0
0 0.2 0.4 0.6 0.8 1 0 2 4 6 8 10
Fig.3 Static Drain-Source On-State Resistance vs. Drain Current Fig.4 Static Drain-Source On-State Resistance vs. Drain Current
1000 1000
Ta=25°C VGS=10V
pulsed
pulsed
Static Drain-Source On-State Resistance
VGS=4.0V
100
VGS=4.5V
RDS(on) [mΩ]
RDS(on) [mΩ]
VGS=10V
100
Ta=125°C
Ta=75°C
Ta=25°C
10 Ta=-25°C
10 1
0.01 0.1 1 10 0.01 0.1 1 10
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current Fig.6 Static Drain-Source On-State Resistance vs. Drain Current
1000 1000
VGS=4.5V VGS=4.0V
pulsed pulsed
Static Drain-Source On-State Resistance
100 100
RDS(on) [mΩ]
RDS(on) [mΩ]
Ta=125°C
Ta=125°C Ta=75°C
Ta=75°C Ta=25°C
Ta=25°C Ta=-25°C
10 Ta=-25°C 10
1 1
0.01 0.1 1 10 0.01 0.1 1 10
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© 2014 ROHM Co., Ltd. All rights reserved. 3/6 2014.02 - Rev.B
DataSheet
RSD050N06
Fig.7 Forward Transfer Admittance vs. Drain Current Fig.8 Typical Transfer Characteristics
10 10
VDS=10V VDS=10V
pulsed pulsed
1
Forward Transfer Admittance
1 0.1 Ta=125°C
Ta=25°C
Ta=-25°C 0.01 Ta=-25°C
0.1 0.001
0.0001
0.01 0.00001
0.01 0.1 1 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Fif.9 Source Current vs. Source-Drain Voltage Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
10 1000
VGS=0V Ta=25°C
pulsed
pulsed
Static Drain-Source On-State Resistance
1 ID=2.5A
Ta=125°C
Ta=75°C
Source Current : Is [A]
Ta=25°C
0.1 Ta=-25°C
RDS(on) [mΩ]
500
0.01 ID=5.0A
0.001
0.0001 0
0.0 0.5 1.0 0 2 4 6 8 10 12 14 16 18 20
1000 12
VDD≒30V Ta=25°C
VGS=10V VDD=30V
RG=10Ω 10 ID=5A
Ta=25°C Pulsed
tf
Pulsed
Gate-Source Voltage : VGS [V]
Switching Time : t [ns]
100 8
td(off) 6
td(on)
10 4
2
tr
1 0
0.01 0.1 1 10 0 2 4 6 8 10
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© 2014 ROHM Co., Ltd. All rights reserved. 4/6 2014.02 - Rev.B
DataSheet
RSD050N06
Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Maximum Safe Operating Area
1000 100
Ta=25°C Operation in this area is limited by RDS(on)
f=1MHz ( VGS = 10V )
VGS=0V
10
Drain Current : ID [ A ]
Capacitance : C [pF]
Ciss PW = 100μs
100 1
PW = 1ms
Coss
PW = 10ms
0.1
DC Operation
Tc=25°C
Crss Single Pulse
10 0.01
0.01 0.1 1 10 100 0.1 1 10 100
10
Tc=25°C
Normalized Transient Thermal Resistance : r(t)
Single Pulse
Rth(ch-c)=8.33°C/W
1 Rth(ch-c)(t)=r(t)×Rth(ch-c)
0.1
0.01
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
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© 2014 ROHM Co., Ltd. All rights reserved. 5/6 2014.02 - Rev.B
DataSheet
RSD050N06
Measurement circuits
Pulse width
VGS ID
VDS 90%
50% 50%
RL VGS 10%
VDS
D.U.T. 10% 10%
ton toff
VG
VGS ID
VDS
Qg
RL
VGS
IG(Const.) D.U.T.
Qgs Qgd
VDD
Charge
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© 2014 ROHM Co., Ltd. All rights reserved. 6/6 2014.02 - Rev.B