EXPERIMENT 01

Plotting the VI characteristics of Silicon Diode

Procedure:
1) First fix the module KL-23001 in the KL-200 Linear Circuit Lab, then locate the block
marked 23001-block a
2) Insert the short circuit clip to make the circuit according to the circuit diagram (a) on the
breadboard. Connect the voltmeter and ammeter.
3) Connect 12V to the input terminals, then adjust VR(VR10K) to apply voltage to the
terminals of the diode as shown in Table(1) from 0.1V to 0.7V, and view the
corresponding forward current, Use VR to continuously adjust Vf to view how it will
change, then record in Table(1).
4) Insert the short-circuit clip to make the circuit according to the circuit diagram (b) on the
bread board. Connect the voltmeter and ammeter.
5) Connect 12V to the input terminals, and then adjust VR (VR10K) to apply reverse
voltage to the terminals of the diode as shown in Table (2).
6) Plot the values of Table (1) & (2).

Circuit Diagram:

Forward Biased:
Reverse Biased:

Experimental Result:

Table 1:
Vf(V) 0.108 0.212 0.304 0.406 0.519 0.603 0.66

If(mA) 0 0 0 0.083 0.73 3.72 11.27

Table 2:
Vf(V) 1 2 3 4 5

If(mA) 0 0 0 0 0
Graph:

VI characterstic of silicon diode

12

10

6
If(mA)

0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
-2
Vf(V)

Conclusion:
During forward biased when voltage exceeds and avalanche occurs then the forward current

increaes rapidly for a very small increase in voltage producing a non linear curve.

Likewise, when the diode is reverse biased the diode blocks the current.