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Product/Process Change Notification: PCN MMS-MMY/13/7714 Dated 18 Feb 2013
Product/Process Change Notification: PCN MMS-MMY/13/7714 Dated 18 Feb 2013
Product/Process Change Notification: PCN MMS-MMY/13/7714 Dated 18 Feb 2013
® CHANGE NOTIFICATION
PCN MMS-MMY/13/7714
Dated 18 Feb 2013
1/77
PCN MMS-MMY/13/7714 - Dated 18 Feb 2013
Description of the change Redesign and upgrade to the new CMOSF8H+ process technology.
Manufacturing Location(s)
® 2/77
PCN MMS-MMY/13/7714 - Dated 18 Feb 2013
DOCUMENT APPROVAL
Name Function
® 4/77
PRODUCT / PROCESS
CHANGE NOTIFICATION
M24C01, M24C02, M24C04, M24C16 1-, 2-, 4-, 16-Kbit I2C Bus EEPROM
Industrial grade / UFDFPN8 & TSSOP8 packages
Redesign and upgrade to the CMOSF8H+ process technology
The new M24C01, M24C02, M24C04 and M24C16 in CMOSF8H+ version are functionally compatible
with the current CMOSF6SP 36% version as per common datasheet rev. 17 – April 2011, attached.
These new M24C01, M24C02, M24C04 and M24C16 are described in specific datasheets:
A common datasheet for both M24C01 and M24C02 (rev. 1, Dec. 2012), a single datasheet for
M24C04 (rev. 2, Jan. 2013), a single datasheet for M24C16 (rev. 1, Oct. 2012) with following
differences versus previous common datasheet rev. 17:
Concurrent to this change, the UFDFPN8 and TSSOP8 packages will be assembled with 0.8 mil
Copper wire (Copper wire assembly process already qualified and in full production for M24C01,
M24C02, M24C04 and M24C16 in CMOSF8H+, when assembled on SO8N SHD line at ST Shenzhen
(China)).
Why?
The strategy of STMicroelectronics Memory Division is to support our customers on a long-term basis.
In line with this commitment, the qualification of the M24C01, M24C02, M24C04 and M24C16 in the
new CMOSF8H+ process technology will increase the production capacity throughput and
consequently improve the service to our customers.
M24C01, M24C02, M24C04, M24C16, 1-, 2-, 4-, 16-Kbit I²C Bus EEPROM
Industrial grade / UFDFPN8 & TSSOP8 packages
Redesign and upgrade to the CMOSF8H+ process technology
When?
The production of the upgraded M24C01, M24C02, M24C04 and M24C16 with the new CMOSF8H+
and assembled in UFDFPN8 and TSSOP8 packages will ramp up from April 2013 and shipments can
start from May 2013 onward (or earlier upon customer approval).
The intermediate Qualification Reports QRMMY1207 (M24C01, M24C02, M24C04) and QRMMY1126
(M24C16) are available and included inside this document.
- Fit: No change
- Function:
- Change on DC characteristic ICC1 standby supply current
- Change on Absolute maximum rating VESD HBM
2
M24C01, M24C02, M24C04, M24C16, 1-, 2-, 4-, 16-Kbit I²C Bus EEPROM
Industrial grade / UFDFPN8 & TSSOP8 packages
Redesign and upgrade to the CMOSF8H+ process technology
On the BOX LABEL MARKING, the difference is visible inside the Finished Good Part Number:
the process technology identifier is “T” for the upgraded version in CMOSF8H+, this identifier
being “G” or “S” for the current version in CMOSF6SP 36%.
TYPE: M24C02-RDW6TP
M24C02-RDW6TPT X X
Total Qty: 2500 Mask revision
and/or
Wafer diffusion plant
Process Technology:
“T” for CMOSF8H+
“G” or “S” for CMOSF6SP 36% Assembly and Test & Finishing plants
Marking 402RT
Bulk ID X0X00XXX0000
3
M24C01, M24C02, M24C04, M24C16, 1-, 2-, 4-, 16-Kbit I²C Bus EEPROM
Industrial grade / UFDFPN8 & TSSOP8 packages
Redesign and upgrade to the CMOSF8H+ process technology
- DEVICE MARKING
For the TSSOP8 package, the difference is visible inside the product name where the last digit is
“T” for the upgraded version in CMOSF8H+, this digit being “6” for current versions.
Upgraded Current
CMOSF8H+ CMOSF6SP 36%
(ST Rousset) (ST Ang Mo Kio)
or
GLOBALFOUNDRIES
For the UFDFPN8 package, the difference is visible inside the product name.
Example for M24C02-RMC6TG: upgraded version in CMOSF8H+ is 4ART, current version is
402R.
Upgraded Current
CMOSF8H+ CMOSF6SP 36%
(ST Rousset) (ST Ang Mo Kio)
or
GLOBALFOUNDRIES
4
M24C01, M24C02, M24C04, M24C16, 1-, 2-, 4-, 16-Kbit I²C Bus EEPROM
Industrial grade / UFDFPN8 & TSSOP8 packages
Redesign and upgrade to the CMOSF8H+ process technology
Forecast date of
Qualification samples availability for
customer(s): See details in APPENDIX B
5
M24C01, M24C02, M24C04, M24C16, 1-, 2-, 4-, 16-Kbit I²C Bus EEPROM
Industrial grade / UFDFPN8 & TSSOP8 packages
Redesign and upgrade to the CMOSF8H+ process technology
(*) Following product line rationalization, we recommend customer to use –R version (1.8 V – 5.5 V)
when –W (2.5 V – 5.5 V) is used.
For instance, M24C02-RDW6TP should be preferred to M24C02-WDW6TP.
6
M24C01, M24C02, M24C04, M24C16, 1-, 2-, 4-, 16-Kbit I²C Bus EEPROM
Industrial grade / UFDFPN8 & TSSOP8 packages
Redesign and upgrade to the CMOSF8H+ process technology
7
QRMMY1207
Qualification report
New design / M24C04 M24C02 M24C01
using the CMOSF8H+ technology at the Rousset 8” Fab
M24C04-FMC5TG M24C02-FMN6TP
M24C04-FMC6TG M24C02-RMC6TG
M24C04-FMN6TP M24C02-RMC6TG/12
Commercial product M24C04-RMC6TG M24C02-RMN6TP
M24C04-RMN6TP M24C02-WMN6TP
M24C04-WMN6TP M24C01-RMN6TP
M24C02-FMC6TG M24C01-WMN6TP
M24C04: 4-Kbit serial I²C bus EEPROM
Product description M24C02: 2-Kbit serial I²C bus EEPROM
M24C01: 1-Kbit serial I²C bus EEPROM
Product group MMS
Product division MMY - Memory
Silicon process technology CMOSF8H+
Wafer fabrication location RS8F - ST Rousset 8”, France
ST Rousset, France
Electrical Wafer Sort test plant location
ST Toa Payoh, Singapore
1.1 Objectives
This qualification report summarizes the results of the reliability trials that were performed to
qualify the new design M24C04, M24C02 and M24C01 using the CMOSF8H+ silicon
process technology at the ST Rousset 8” diffusion fab.
The CMOSF8H+ is closely derived from CMOSF8H silicon process technology (already
used for production of EEPROM densities ranging from 32 Kb to 2 Mb), with a more
compact layout, in order to achieve a competitive die size.
The CMOSF8H+ technology is already qualified in the ST Rousset 8” fab using M24C16 as
driver product.
The voltage and temperature ranges covered by this document are:
● 2.5 to 5.5 V at –40 to 85 °C for -W devices
● 1.8 to 5.5 V at –40 to 85 °C for -R devices
● 1.7 to 5.5 V at –40 to 85 °C for -F devices
This document serves for the qualification of the named product using the named silicon
process technology in the named diffusion plant.
1.2 Conclusion
The new design M24C04, M24C02 and M24C01 using the CMOSF8H+ silicon process
technology at the ST Rousset 8” diffusion fab have passed all the reliability requirements
and all products described in Table 1 are qualified.
Qualification tests for products assembled in TSSOP8 (not yet listed in Table 1) are ongoing
with positive preliminary reliability results.
Refer to Section 3: Reliability test results for details on the test results.
2/14 Rev 3
QRMMY1207 Device characteristics
2 Device characteristics
Device description
The M24C04-x, M24C02-x and M24C01-x devices are I2C-compatible electrically erasable
programmable memories (EEPROM). They are organized as 512 / 256 / 128 × 8 bits
respectively.
The device behaves as a slave in the I2C protocol, with all memory operations synchronized
by the serial clock. Read and Write operations are initiated by a Start condition, generated
by the bus master. The Start condition is followed by a device select code and a Read/Write
bit (RW) terminated by an acknowledge bit.
When writing data to the memory, the device inserts an acknowledge bit during the 9th bit
time, following the bus master’s 8-bit transmission. When data is read by the bus master, the
bus master acknowledges the receipt of the data byte in the same way. Data transfers are
terminated by a Stop condition after an Ack for Write, and after a NoAck for Read.
Refer to the product datasheet for more details.
Rev 3 3/14
Reliability test results QRMMY1207
Engineering assy
M24C16 CMOSF8H+ ST Rousset 8” CDIP8 (1)
1. CDIP8 is a engineering ceramic package used only for die-oriented reliability trials.
2. Qualification on 3 lots using the driver product M24C16 - Qualification of M24C04/M24C02/M24C01
benefits of the family approach (1 lot).
3. The M24C02, M24C01 products are derived from M24C04 product during test flow. Consequently,
M24C04 reliability results are used to qualify all named products.
The package qualifications were mainly obtained by similarity. The product vehicles used for
package qualification are presented in Table 4.
ST Shenzhen /
SO8N
Subcon Amkor
ST Shenzhen /
M24C16 (1) CMOSF8H+ ST Rousset 8” TSSOP8
Subcon Amkor
UFDFPN8 (MLP8) ST Calamba /
2 x 3 mm Subcon Amkor
1. Larger memory array using the same silicon process technology in the same diffusion fab. Package
qualification results of M24C16 are applicable to M24C04/M24C02/M24C01.
4/14 Rev 3
QRMMY1207 Reliability test results
Table 5. Die-oriented reliability test plan and result summary (CDIP8 / Engineering
package)
Test short description (1)
Rev 3 5/14
Reliability test results QRMMY1207
Table 5. Die-oriented reliability test plan and result summary (CDIP8 / Engineering
package) (continued)
Test short description (1)
6/14 Rev 3
QRMMY1207 Reliability test results
Table 6. Package-oriented reliability test plan and result summary (SO8N / ST Shenzhen &
subcontractor Amkor)
Test short description(1)
M24C04
Test Sample No. M24C02
Method Conditions size / of Duration M24C16 M24C01
lots lots (2)
PC MSL1, peak
JESD22-A113
temperature at 260 °C, 3 1145 1 N/A 0/1145 0/1145 0/1145 -
J-STD-020D
IReflow
Temperature humidity bias
THB
(3) AEC-Q100- 85 °C, 85% RH, 1008 hrs 0/80 0/80 0/80 -
80 1
JESD22-A101 bias 5.5 V 2008 hrs 0/80 0/80 0/80 -
Temperature cycling
TC
(3) AEC-Q100- 1000
–65 °C / +150 °C 80 1 0/80 0/80 0/80 -
JESD22-A104 cycles
Thermal shocks
TMSK
(3) 200
JESD22-A106 –55 °C / +125 °C 25 1 0/25 0/25 0/25 -
shocks
Autoclave (pressure pot)
AC
(3) AEC-Q100- 121 °C, 100% RH
80 1 168 hrs 0/80 0/80 0/80 -
JESD22-A102 at 2 ATM
High temperature storage life
HTSL
(3) AEC-Q100- Retention bake 1008 hrs 0/80 0/80 0/80 -
80 1
JESD22-A103 at 150 °C 2008 hrs 0/80 0/80 0/80 -
Early life failure rate
ELFR
(3) AEC-Q100-
HTOL at 150 °C, 6V 800 1 48 hrs 0/800 0/800 0/800 -
008
Electrostatic discharge (charge device model)
ESD AEC-Q100-
CDM Field induced charging PASS PASS
011 18 1 N/A - -
method > 1500V > 1500V
JESD22-C101
1. See Table 9: List of terms for a definition of abbreviations.
2. Larger memory array using the same silicon process technology in the same diffusion fab - Package qualification results of
M24C16 are applicable to M24C04/M24C02/M24C01.
3. THB-, TC-, TMSK-, AC-, HTSL and ELFR- dedicated parts are first subject to preconditioning flow.
Rev 3 7/14
Reliability test results QRMMY1207
Table 7. Package-oriented reliability test plan and result summary (TSSOP8 / ST Shenzhen &
subcontractor Amkor)
Test short description(1)
M24C04
Test Sample No. M24C02
Method Conditions size / of Duration M24C16 M24C01
lots lots (2)
PC MSL1, peak
JESD22-A113 temperature at 1145 1 N/A 0/1145 0/1145 0/1145 -
J-STD-020D
260 °C, 3 IReflow
Temperature humidity bias
168 hrs 0/80 0/80 0/80 -
THB Results
504 hrs 0/80 0/80 -
(3) AEC-Q100- 85 °C, 85% RH, FC W07
80 1
JESD22-A101 bias 5.5 V
Results
Results Results
1008 hrs FC -
FC W10 FC W11
W10
Temperature cycling
500
TC 0/80 0/80 0/80 -
(3) AEC-Q100- cycles
–65 °C / +150 °C 80 1
JESD22-A104 1000 Results
0/80 0/80 -
cycles FC W07
Thermal shocks
TMSK
(3) 200
JESD22-A106 –55 °C / +125 °C 25 1 0/25 0/25 0/25 -
shocks
Autoclave (pressure pot)
AC
(3) AEC-Q100- 121 °C, 100% RH
80 1 168 hrs 0/80 0/80 0/80 -
JESD22-A102 at 2 ATM
High temperature storage life
168 hrs 0/80 0/80 0/80 -
HTSL Results
504 hrs 0/80 0/80 -
(3) AEC-Q100- Retention bake at FC W07
80 1
JESD22-A103 150 °C
Results
Results Results
1008 hrs FC -
FC W10 FC W11
W10
Early life failure rate
ELFR
(3) HTOL at 150 °C, Results
AEC-Q100-008 800 1 48 hrs 0/800 0/800 -
6V FC W08
8/14 Rev 3
QRMMY1207 Reliability test results
Table 7. Package-oriented reliability test plan and result summary (TSSOP8 / ST Shenzhen &
subcontractor Amkor) (continued)
Test short description(1)
M24C04
Test Sample No. M24C02
Method Conditions size / of Duration M24C16 M24C01
lots lots (2)
Table 8. Package-oriented reliability test plan and result summary (UFDFPN8 MLP8 2 x 3 mm /
ST Calamba & subcontractor Amkor)
Test short description(1)
M24C04
Test Sample No. M24C02
Method Conditions size / of Duration M24C16 M24C01
lots lots (2)
PC MSL1, peak
JESD22-A113
temperature at 260 °C, 3 345 1 N/A 0/345 0/345 0/345 -
J-STD-020D
IReflow
Temperature humidity bias
THB
(3) AEC-Q100- 85 °C, 85% RH,
80 1 1008 hrs 0/80 0/80 0/80 -
JESD22-A101 bias 5.5 V
Temperature cycling
TC
(3) AEC-Q100- 1000
–65 °C / +150 °C 80 1 0/80 0/80 0/80 -
JESD22-A104 cycles
Thermal shocks
TMSK
(3) 200
JESD22-A106 –55 °C / +125 °C 25 1 0/25 0/25 0/25 -
shocks
Rev 3 9/14
Reliability test results QRMMY1207
Table 8. Package-oriented reliability test plan and result summary (UFDFPN8 MLP8 2 x 3 mm /
ST Calamba & subcontractor Amkor)
Test short description(1)
M24C04
Test Sample No. M24C02
Method Conditions size / of Duration M24C16 M24C01
lots lots (2)
10/14 Rev 3
QRMMY1207 Applicable and reference documents
Rev 3 11/14
Glossary QRMMY1207
5 Glossary
12/14 Rev 3
QRMMY1207 Revision history
6 Revision history
Rev 3 13/14
QRMMY1126
Qualification report
New design / M24C16-R M24C16-W M24C16-F
using the CMOSF8H+ technology at the Rousset 8” Fab
M24C16-FMC5TG
M24C16-FMC6TG
M24C16-FMN6TP
M24C16-RMC6TG
Commercial product M24C16-RMC6TG/12
M24C16-RMN6P
M24C16-RMN6TP
M24C16-WMN6P
M24C16-WMN6TP
Product description 16 Kbit serial I²C bus EEPROM
Product group MMS
Product division MMY - Memory
Silicon process technology CMOSF8H+
Wafer fabrication location RS8F - ST Rousset 8”, France
ST Rousset, France
Electrical Wafer Sort test plant location
ST Toa Payoh, Singapore
1.1 Objectives
This qualification report summarizes the results of the reliability trials that were performed to
qualify the new design M24C16 using the CMOSF8H+ silicon process technology at the ST
Rousset 8” diffusion fab.
The voltage and temperature ranges covered by this document are:
● 2.5 to 5.5 V at –40 to 85 °C for -W devices
● 1.8 to 5.5 V at –40 to 85 °C for -R devices
● 1.7 to 5.5 V at –40 to 85 °C for -F devices
The CMOSF8H+ is closely derived from CMOSF8H silicon process technology (already
used for production of EEPROM densities ranging from 32 Kb to 2 Mb), with a more
compact layout, in order to achieve a competitive die size.
This document serves for the qualification of the named product and the named silicon
process technology in the named diffusion plant.
1.2 Conclusion
The new design M24C16 using the CMOSF8H+ silicon process technology at the ST
Rousset 8” diffusion fab has passed all reliability requirements and all products described in
Table 1 are qualified.
Qualification tests for products assembled in TSSOP8 (not yet listed in Table 1) are ongoing
with positive preliminary reliability results.
Refer to Section 3: Reliability test results for details on the test results.
2/12 Rev 5
QRMMY1126 Device characteristics
2 Device characteristics
Device description
The M24C16-x devices are I2C-compatible electrically erasable programmable memories
(EEPROM). They are organized as 2 Kb × 8 bits.
The device behaves as a slave in the I2C protocol, with all memory operations synchronized
by the serial clock. Read and Write operations are initiated by a Start condition, generated
by the bus master. The Start condition is followed by a device select code and a Read/Write
bit (RW) terminated by an acknowledge bit.
When writing data to the memory, the device inserts an acknowledge bit during the 9th bit
time, following the bus master’s 8-bit transmission. When data is read by the bus master, the
bus master acknowledges the receipt of the data byte in the same way. Data transfers are
terminated by a Stop condition after an Ack for Write, and after a NoAck for Read.
Refer to the product datasheet for more details.
Rev 5 3/12
Reliability test results QRMMY1126
Engineering assy
M24C16 CMOSF8H+ ST Rousset 8” CDIP8 (1)
1. CDIP8 is a engineering ceramic package used only for die-oriented reliability trials.
The product vehicles used for package qualification are described in Table 4.
ST Shenzhen /
SO8N
Subcon Amkor
ST Shenzhen /
M24C16 CMOSF8H+ ST Rousset 8” TSSOP8
Subcon Amkor
UFDFPN8 (MLP8) ST Calamba /
2 x 3 mm Subcon Amkor
4/12 Rev 5
QRMMY1126 Reliability test results
Table 5. Die-oriented reliability test plan and result summary (CDIP8 / Engineering
package)
Test short description(1)
Rev 5 5/12
Reliability test results QRMMY1126
Table 6. Package-oriented reliability test plan and result summary (SO8N / ST Shenzhen &
subcontractor Amkor)
Test short description(1)
6/12 Rev 5
QRMMY1126 Reliability test results
Table 7. Package-oriented reliability test plan and result summary (TSSOP8 / ST Shenzhen &
subcontractor Amkor)
Test short description(1)
Rev 5 7/12
Reliability test results QRMMY1126
Table 8. Package-oriented reliability test plan and result summary (UFDFPN8 MLP8 2 x 3 mm /
ST Calamba & subcontractor Amkor)
Test short description(1)
8/12 Rev 5
QRMMY1126 Applicable and reference documents
Rev 5 9/12
Glossary QRMMY1126
5 Glossary
10/12 Rev 5
QRMMY1126 Revision history
6 Revision history
Rev 5 11/12
M24C01, M24C02, M24C04, M24C16, 1-, 2-, 4-, 16-Kbit I²C Bus EEPROM
Industrial grade / UFDFPN8 & TSSOP8 packages
Redesign and upgrade to the CMOSF8H+ process technology
8
M24C16-x M24C08-x
M24C04-x M24C02-x M24C01-x
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit serial I²C bus EEPROM
Features
■ Supports both the 100 kHz I2C Standard-mode
and the 400 kHz I2C Fast-mode
■ Single supply voltage:
– 2.5 V to 5.5 V for M24Cxx-W
– 1.8 V to 5.5 V for M24Cxx
– 1.7 V to 5.5 V for M24Cxx-F PDIP8 (BN)
■ Write Control input
■ Byte and Page Write (up to 16 bytes)
■ Random and Sequential Read modes
■ Self-timed programming cycle
SO8 (MN)
■ Automatic address incrementing 150 mils width
■ Enhanced ESD/latch-up protection
■ More than 1 million write cycles
■ More than 40-year data retention
■ Packages:
TSSOP8 (DW)
– SO8, TSSOP8, UFDFPN8: ECOPACK2® 169 mils width
(RoHS-compliant and Halogen-free)
– PDIP8: ECOPACK1® (RoHS-compliant)
Contents
1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2 Signal description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.1 Serial Clock (SCL) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.2 Serial Data (SDA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.3 Chip Enable (E0, E1, E2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.3.1 Write Control (WC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.4 Supply voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.4.1 Operating supply voltage VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.4.2 Power-up conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.4.3 Device reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.4.4 Power-down conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
3 Device operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
3.1 Start condition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
3.2 Stop condition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
3.3 Acknowledge bit (ACK) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
3.4 Data input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
3.5 Memory addressing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
3.6 Write operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
3.6.1 Byte Write . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
3.6.2 Page Write . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
3.6.3 Minimizing system delays by polling on ACK . . . . . . . . . . . . . . . . . . . . . 16
3.7 Read operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.7.1 Random Address Read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.7.2 Current Address Read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.7.3 Sequential Read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.7.4 Acknowledge in Read mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
5 Maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
6 DC and AC parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
8 Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
List of tables
List of figures
1 Description
3
E0-E2 SDA
SCL M24Cxx
WC
VSS
AI02033
I²C uses a two-wire serial interface, comprising a bidirectional data line and a clock line. The
devices carry a built-in 4-bit Device Type Identifier code (1010) in accordance with the I²C
bus definition.
The device behaves as a slave in the I²C protocol, with all memory operations synchronized
by the serial clock. Read and Write operations are initiated by a Start condition, generated
by the bus master. The Start condition is followed by a device select code and Read/Write
bit (RW) (as described in Table 3), terminated by an acknowledge bit.
When writing data to the memory, the device inserts an acknowledge bit during the 9th bit
time, following the bus master’s 8-bit transmission. When data is read by the bus master, the
bus master acknowledges the receipt of the data byte in the same way. Data transfers are
terminated by a Stop condition after an Ack for Write, and after a NoAck for Read.
M24Cxx
16Kb / 8Kb / 4Kb / 2Kb / 1Kb
NC / NC / NC / E0 / E0 1 8 VCC
NC / NC / E1 / E1 / E1 2 7 WC
NC / E2 / E2 / E2 / E2 3 6 SCL
VSS 4 5 SDA
AI02034F
1. NC = Not connected
2. See Section 7: Package mechanical data for package dimensions, and how to identify pin-1.
3. The Ei inputs are not decoded, and are therefore decoded as “0” (See Section 2.3: Chip Enable (E0, E1,
E2) for more information).
WC VCC
SDA
SCL VSS
ai14908
1. For devices of less than 16Kb (see Figure 2: 8-pin package connections (top view)), the Ei inputs are not
connected to a ball, therefore the Ei input is decoded as "0" (see also Section 2.3: Chip Enable (E0, E1,
E2))
Caution: EEPROM dice delivered in wafer form or in WLCSP package by STMicroelectronics must
never be exposed to ultra violet (UV) light, since EEPROM cells loose their charge (and so
their binary value) when exposed to UV light.
2 Signal description
M24Cxx M24Cxx
Ei Ei
VSS VSS
Ai11650
Figure 5. Maximum RP value versus bus parasitic capacitance (C) for an I²C bus
100
Bus line pull-up resistor
SCL
SDA
SDA SDA
Start Input Change Stop
condition condition
SCL 1 2 3 7 8 9
Start
condition
SCL 1 2 3 7 8 9
Stop
condition
AI00792c
b7 b6 b5 b4 b3 b2 b1 b0
3 Device operation
The device supports the I²C protocol. This is summarized in Figure 6. Any device that sends
data on to the bus is defined to be a transmitter, and any device that reads the data to be a
receiver. The device that controls the data transfer is known as the bus master, and the
other as the slave device. A data transfer can only be initiated by the bus master, which will
also provide the serial clock for synchronization. The device is always a slave in all
communication.
WC
Start
Stop
R/W
WC
R/W
WC (cont'd)
NO ACK NO ACK
AI02803d
WC
Start
Stop
R/W
WC
R/W
WC (cont'd)
ACK ACK
AI02804c
Write cycle
in progress
Start condition
Device select
with RW = 0
NO ACK
Returned
Next
NO operation is YES
addressing the
memory
Send Address
and Receive ACK
ReStart
AI01847d
Start
Stop
R/W
Start
Stop
R/W R/W
Stop
R/W
Start
R/W R/W
ACK NO ACK
Data out N
Stop
AI01942b
1. The seven most significant bits of the device select code of a Random Read (in the 1st and 3rd bytes) must
be identical.
The device is delivered with all bits in the memory array set to 1 (each byte contains FFh).
5 Maximum rating
Stressing the device outside the ratings listed in Table 5 may cause permanent damage to
the device. These are stress ratings only, and operation of the device at these, or any other
conditions outside those indicated in the operating sections of this specification, is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability. Refer also to the STMicroelectronics SURE program and other relevant
quality documents.
6 DC and AC parameters
This section summarizes the operating and measurement conditions, and the DC and AC
characteristics of the device. The parameters in the DC and AC characteristic tables that
follow are derived from tests performed under the measurement conditions summarized in
the relevant tables. Designers should check that the operating conditions in their circuit
match the measurement conditions when relying on the quoted parameters.
0.3VCC
0.2VCC
AI00825B
T8,8, T#(#,
T8(8( T#,#(
3#,
T$,#, T8,8,
3$! )N
3#,
3$! )N
T7
T#($( T#($,
3TOP 7RITE CYCLE 3TART
CONDITION CONDITION
T#(#,
3#,
!)F
Figure 13. WLCSP (0.5 mm) and Thin WLCSP (0.3 mm) 0.4 mm pitch 5 bumps,
package outline
D
e1 Orientation reference
e2
A
E B e
C
F
b G
1 2 3
A2
A
A1
Table 17. M24C08: WLCSP (0.5 mm height) 0.4 mm pitch, 5 bumps, package data
millimeters inches(1)
Symbol
Typ Min Max Typ Min Max
Table 18. M24C08: Thin WLCSP (0.3 mm height), 0.4 mm pitch, 5 bumps, package
data(1)
millimeters inches(2)
Symbol
Typ Min Max Typ Min Max
Table 19. M24C16: WLCSP (0.5 mm height) 0.4 mm pitch, 5 bumps, package data(1)
millimeters inches(2)
Symbol
Typ Min Max Typ Min Max
Figure 14. SO8 narrow – 8 lead plastic small outline, 150 mils body width, package
outline
h x 45˚
A2 A
c
ccc
b
e
0.25 mm
D GAUGE PLANE
k
8
E1 E
1 L
A1
L1
SO-A
Table 20. SO8 narrow – 8 lead plastic small outline, 150 mils body width,
package mechanical data
millimeters inches(1)
Symbol
Typ Min Max Typ Min Max
A - - 1.750 - - 0.0689
A1 - 0.100 0.250 - 0.0039 0.0098
A2 - 1.250 - - 0.0492 -
b - 0.280 0.480 - 0.0110 0.0189
c - 0.170 0.230 - 0.0067 0.0091
ccc - - 0.100 - - 0.0039
D 4.900 4.800 5 0.1929 0.1890 0.1969
E 6.000 5.800 6.200 0.2362 0.2283 0.2441
E1 3.900 3.800 4.000 0.1535 0.1496 0.1575
e 1.270 - - 0.0500 - -
h - 0.250 0.500 - 0.0098 0.0197
k - 0° 8° - 0° 8°
L - 0.400 1.270 - 0.0157 0.0500
L1 1.040 0.0409
1. Values in inches are converted from mm and rounded to 4 decimal digits.
Figure 15. UFDFPN8 (MLP8) 8-lead ultra thin fine pitch dual flat package no lead
2 x 3 mm, outline
-" -#
$ E B E B
, ,
, ,
0IN
% % %
+
+
, ,
!
$ $
EEE
! :7?-%E
Table 21. UFDFPN8 (MLP8) 8-lead ultra thin fine pitch dual flat package no lead
2 x 3 mm, data
millimeters inches(1) Note
Symbol
Typ Min Max Typ Min Max
Figure 16. TSSOP8 – 8 lead thin shrink small outline, package outline
D
8 5
c
E1 E
1 4
A1 L
A A2
CP L1
b e
TSSOP8AM
Table 22. TSSOP8 – 8 lead thin shrink small outline, package mechanical data
millimeters inches(1)
Symbol
Typ. Min. Max. Typ. Min. Max.
A - - 1.200 - - 0.0472
A1 - 0.050 0.150 - 0.0020 0.0059
A2 1.000 0.800 1.050 0.0394 0.0315 0.0413
b - 0.190 0.300 - 0.0075 0.0118
c - 0.090 0.200 - 0.0035 0.0079
CP - - 0.100 - - 0.0039
D 3.000 2.900 3.100 0.1181 0.1142 0.1220
e 0.650 - - 0.0256 - -
E 6.400 6.200 6.600 0.2520 0.2441 0.2598
E1 4.400 4.300 4.500 0.1732 0.1693 0.1772
L 0.600 0.450 0.750 0.0236 0.0177 0.0295
L1 1.000 - - 0.0394 - -
α - 0° 8° - 0° 8°
1. Values in inches are converted from mm and rounded to 4 decimal digits.
Figure 17. PDIP8 – 8 pin plastic DIP, 0.25 mm lead frame, package outline
b2 E
A2 A
A1 L
b e c
eA
eB
D
E1
1
PDIP-B
Table 23. PDIP8 – 8 pin plastic DIP, 0.25 mm lead frame, package mechanical data
millimeters inches(1)
Symbol
Typ. Min. Max. Typ. Min. Max.
A - - 5.330 - - 0.2098
A1 - 0.380 - - 0.0150 -
A2 3.300 2.920 4.950 0.1299 0.1150 0.1949
b 0.460 0.360 0.560 0.0181 0.0142 0.0220
b2 1.520 1.140 1.780 0.0598 0.0449 0.0701
c 0.250 0.200 0.360 0.0098 0.0079 0.0142
D 9.270 9.020 10.160 0.3650 0.3551 0.4000
E 7.870 7.620 8.260 0.3098 0.3000 0.3252
E1 6.350 6.100 7.110 0.2500 0.2402 0.2799
e 2.540 - - 0.1000 - -
eA 7.600 - - 0.3000 - -
eB - - 10.920 - - 0.4299
L 3.300 2.920 3.810 0.1299 0.1150 0.1500
1. Values in inches are converted from mm and rounded to 4 decimal digits.
8 Part numbering
Example: M24C16 – W DW 3 T P /S
Device type
M24 = I2C serial access EEPROM
Device Function
16 = 16 Kbit (2048 x 8)
08 = 8 Kbit (1024 x 8)
04 = 4 Kbit (512 x 8)
02 = 2 Kbit (256 x 8)
01 = 1 Kbit (128 x 8)
Operating voltage
W = VCC = 2.5 V to 5.5 V (400 kHz)
R = VCC = 1.8 V to 5.5 V (400 kHz)
F = VCC = 1.7 V to 5.5 V (400 kHz)
Package
BN = PDIP8
MN = SO8 (150 mil width)
MB or MC= UFDFPN8 (MLP8)
DW = TSSOP8 (169 mil width)
CS = WLCSP(1) (Chip scale package)
CT = Thin WLCSP(2) (Chip scale package)
Device grade
6 = Industrial: device tested with standard test flow over –40 to 85 °C
3 = Automotive: device tested with high reliability certified flow(3) over –40 to 125 °C
5 = Consumer: device tested with standard test flow over –20 to 85 °C.
Option
T = Tape and reel packing
Plating technology
P or G = ECOPACK® (RoHS compliant)
Process(4)
/S = F6SP36%
1. Only M24C08 and M24C16 devices are offered in the WLCSP package.
2. Only M24C08-F devices are offered in the Thin WLCSP package.
3. ST strongly recommends the use of the Automotive Grade devices for use in an automotive environment.
The High Reliability Certified Flow (HRCF) is described in the quality note QNEE9801. Please ask your
nearest ST sales office for a copy.
4. Used only for device grade 3.
For a list of available options (speed, package, etc.) or for further information on any aspect
of this device, please contact your nearest ST sales office.
9 Revision history
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries(‘‘ST’’) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND / OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE ( AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION ), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS ‘‘AUTOMOTIVE
GRADE’’ MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners
® 77/77
Public Products List
®
PCN Title : M24C01, M24C02, M24C04, M24C16 1-, 2-, 4-, 16-Kbit I2C Bus EEPROM Industrial grade / UFDFPN8 & TSSOP8 packages Redesig
PCN Reference : MMS-MMY/13/7714
PCN Created on : 11-FEB-2013
Dear Customer,
Please find below the Standard Public Products List impacted by the change:
ST COMMERCIAL PRODUCT
1/1