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Rpi 0128 210594
Rpi 0128 210594
Forward current IF 30 mA
Reverse voltage VR 5 V DSC(Digital steal camera)
Power dissipation PD 80 mW
DVC(Digital video camera)
Collector-emitter voltage
Digital handy phone
VCEO 30 V
transistor )
Collector current IC 30 mA
Collector power dissipation PC 80 mW 1) Ultraminiature SMD type.
Operating temperature Topr −25 to +85 °C 2) Gap 1.2mm.
Storage temperature Tstg −30 to +85 °C
IC2 1.0 5 mA
Collector-emitter saturation voltage VCE(sat) − − 0.4 V IF=20mA, IC=0.1mA
Infrared Transfer
Rise time tr − 10 − μs
Response time VCC=5V, IF=20mA, RL=100Ω
Fall time tf − 10 − μs
Cut-off frequency fC − 1 − MHz
emitter
IF=5mA
diode
Response time tr tf 10
∗ This product is not designed to be protected against electromagnetic wave.
Photo
120
RELATIVE COLLECTOR CURRENT : Ic (%)
35 20
FORWARD CURRENT : IF (mA)
100
FORWARD CURRENT : IF (mA)
30
d 16
80 25
Ta=75°C
12 50°C
20
60 25°C
0°C
15 8 −25°C
40
10
20 4
5
0 0
0 0.5 1 1.5 2 0 0 0.5 1.0 1.5 2.0
-25 0 25 50 75 100
DISTANCE : d (mm) AMBIENT TEMPERATURE : Ta (°C) FORWARD VOLTAGE : VF (V)
Fig.1 Relative output current vs. Fig.3 Forward current vs. forward
distance ( ) Fig.2 Forward current falloff voltage
RELATIVE COLLECTOR CURRENT : Ic ( %)
120
RELATIVE COLLECTOR CURRENT : Ic (%)
COLLECTOR POWER DISSIPTION : PD/PC (mW)
140
d 120
100 120
100
100
80 PD PC IF=5mA
80
80
60
60
60
POWER DISSIPATION /
40 20mA
40
40
20 20 20
VCE=5V
0 0 0
−20 0 20 40 60 80 100 -25 0 25 50 75 100
0 0.4 0.8 1.2 1.6
DISTANCE : d (mm) AMBIENT TEMPERATURE : Ta (°C) AMBIENT TEMPERATURE : Ta (°C)
Fig.4 Relative output current vs. Fig.5 Power dissipation / collector power Fig.6 Relative output vs. ambient
distance ( ) dissipation vs. ambient temperature temperature
Dimensions (Unit : mm)
Notes:
1. Unspecified tolerance
2.5 ±0.15 shall be ±0.2 .
2. Dimension in parenthesis are
show for reference.
1.6 ±0.1
Optical center
1.2 ±0.15
(0.34)
2-0.1
(0.1)
C0.3 (0.2)
A
0.6
Gate
0.05 -0.05
1.8 ±0.1
+0.1
0.2
(0.65)
0.45
A' A-A' Cross section
2 3
1.4
0.6
1 4
0.9
2
Internal connection diagram
Anode Collector
Cathode Emitter
14 800
VCC=5V 1000
COLLECTOR CURRENT : IC (mA)
12 700 IC=0.1mA
DARK CURRENT : ICEO (nA)
tr
RESPONSE TIME : tr (μs)
600 100
10
tf VCE=30V
500 VCE=20V
8 10 VCE=10V
400
6
300 1
4
200
Fig.7 Collector current vs. Fig.8 Response time vs. Fig.9 Dark current vs.
forward current load resistance ambient temperature
16 Input VCC
IF=20mA
COLLECTOR CURRENT : IC (mA)
14
12
15mA Input
10
Output
RL
90%
8
10mA 10%
6
Output
td
4 tr tf
5mA
td : Delay time
2
t r : Rise time (time for output current to rise from
0 10% to 90% of peak current)
0 2 4 6 8 10 t f : Fall time (time for output current to fall from 90%
COLLECTOR TO EMITTER VOLTAGE: VCE (V) to 10% of peak current)
Fig.10 Output characteristics Fig.11 Response time measurement circuit 2010.07 Rev.B
Notice
Notes
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The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
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The technical information specified herein is intended only to show the typical functions of and
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The Products specified in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, office-automation equipment, commu-
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Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
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