Power Transistors

2SD1266, 2SD1266A
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB941 and 2SB941A
■ Features Unit: mm

● High forward current transfer ratio hFE which has satisfactory linearity 10.0±0.2 4.2±0.2

0.7±0.1
● Low collector to emitter saturation voltage VCE(sat) 5.5±0.2 2.7±0.2

● Full-pack package which can be installed to the heat sink with

4.2±0.2
one screw

7.5±0.2
φ3.1±0.1
■ Absolute Maximum Ratings

16.7±0.3
(TC=25˚C)
Parameter Symbol Ratings Unit
Collector to 2SD1266 60
VCBO V 1.3±0.2

4.0
base voltage 2SD1266A 80 1.4±0.1

14.0±0.5
Collector to 2SD1266 60

Solder Dip
0.5 +0.2
–0.1
VCEO V 0.8±0.1
emitter voltage 2SD1266A 80
Emitter to base voltage VEBO 6 V 2.54±0.25

Peak collector current ICP 5 A

5.08±0.5
Collector current IC 3 A 1 2 3

Collector power TC=25°C 35 1:Base

PC W 2:Collector
dissipation Ta=25°C 2 3:Emitter
Junction temperature Tj 150 ˚C TO–220 Full Pack Package(a)

Storage temperature Tstg –55 to +150 ˚C

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■ Electrical Characteristics (TC=25˚C)

Parameter Symbol Conditions min typ max Unit
Collector cutoff 2SD1266 VCE = 60V, VBE = 0 200
ICES µA
current 2SD1266A VCE = 80V, VBE = 0 200
Collector cutoff 2SD1266 VCE = 30V, IB = 0 300
ICEO µA
current 2SD1266A VCE = 60V, IB = 0 300
Emitter cutoff current IEBO VEB = 6V, IC = 0 1 mA
Collector to emitter 2SD1266 60
VCEO IC = 30mA, IB = 0 V
voltage 2SD1266A 80
hFE1* VCE = 4V, IC = 1A 70 250
Forward current transfer ratio
hFE2 VCE = 4V, IC = 3A 10
Base to emitter voltage VBE VCE = 4V, IC = 3A 1.8 V
Collector to emitter saturation voltage VCE(sat) IC = 3A, IB = 0.375A 1.2 V
Transition frequency fT VCE = 10V, IC = 0.5A, f = 10MHz 30 MHz
Turn-on time ton 0.5 µs
IC = 1A, IB1 = 0.1A, IB2 = – 0.1A,
Storage time tstg 2.5 µs
VCC = 50V
Fall time tf 0.4 µs
*h Rank classification
FE1

Rank Q P
hFE1 70 to 150 120 to 250

Note: Ordering can be made by the common rank (PQ rank hFE = 70 to 250) in the rank classification.

1
Datasheet pdf - http://www.DataSheet4U.net/
Power Transistors 2SD1266, 2SD1266A

PC — Ta IC — VCE IC — VBE
50 5 8
(1) TC=Ta TC=25˚C VCE=4V
(2) With a 100 × 100 × 2mm
Collector power dissipation PC (W)

7
Al heat sink
40 (3) With a 50 × 50 × 2mm 4 25˚C

Collector current IC (A)

Collector current IC (A)

(1) Al heat sink IB=100mA 6
TC=100˚C –25˚C
(4) Without heat sink 90mA
(PC=2W) 80mA
70mA 5
30 3
60mA
50mA
4
40mA
20 2 30mA
3
20mA
2
(2)
10 1
10mA
(3) 1
(4)
0 0 0
0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12 0 0.4 0.8 1.2 1.6 2.0 2.4
Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V)

VCE(sat) — IC hFE — IC fT — IC
100 10000 10000
Collector to emitter saturation voltage VCE(sat) (V)

IC/IB=8 VCE=4V VCE=5V

f=10MHz
Forward current transfer ratio hFE

30 3000 3000 TC=25˚C

Transition frequency fT (MHz)

10 1000 1000

3 TC=100˚C 300 TC=100˚C 25˚C 300

25˚C
1 100 100
–25˚C

0.3 –25˚C 30 30

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0.1 10 10

0.03 3 3

0.01 1 1
0.01 0.03 0.1 0.3 1 3 10 0.01 0.03 0.1 0.3 1 3 10 0.01 0.03 0.1 0.3 1 3 10
Collector current IC (A) Collector current IC (A) Collector current IC (A)

Area of safe operation (ASO) Rth(t) — t

100 103
Non repetitive pulse (1) Without heat sink
TC=25˚C (2) With a 100 × 100 × 2mm Al heat sink
Thermal resistance Rth(t) (˚C/W)

30
102 (1)
Collector current IC (A)

10
ICP

3 (2)
t=1ms 10
IC
10ms
1
DC
1
0.3

0.1
10–1
2SD1266A
2SD1266

0.03

0.01 10–2
1 3 10 30 100 300 1000 10–4 10–3 10–2 10–1 1 10 102 103 104
Collector to emitter voltage VCE (V) Time t (s)

2
Datasheet pdf - http://www.DataSheet4U.net/