DATA SHEET

PHOTOCOUPLER

PS2581L1,PS2581L2
LONG CREEPAGE TYPE HIGH ISOLATION VOLTAGE
4-PIN PHOTOCOUPLER −NEPOC
TM
Series−

DESCRIPTION
The PS2581L1, PS2581L2 are optically coupled isolators containing a GaAs light emitting diode and an NPN
silicon phototransistor in a plastic DIP (Dual In-line Package).
Creepage distance and clearance of leads are over 8 millimeters.
The PS2581L2 is lead bending type (Gull-wing) for surface mounting.

FEATURES
• Long creepage and clearance distance (8 mm)
• High isolation voltage (BV = 5 000 Vr.m.s.)
• High collector to emitter voltage (VCEO = 80 V)
• High-speed switching (tr = 3 µs TYP., tf = 5 µs TYP.)
• High current transfer ratio (CTR = 200 % TYP.)
• UL approved: File No. E72422 (S)
• CSA approved: No. 101391
• BSI approved: No. 8243/8244
• NEMKO approved: No. P97103006
• DEMKO approved: No. 307269
• SEMKO approved: No. 9741154/01
• FIMKO approved: No. 018277
• VDE0884 approved

ORDERING INFORMATION

*1
Part Number Package Safety Standard Approval Application Part Number

PS2581L1 4-pin DIP UL, CSA, BSI, NEMKO, DEMKO, PS2581L1

PS2581L2 4-pin DIP SEMKO, FIMKO, VDE approved PS2581L2

(lead bending surface mount)

PS2581L2-E3, E4 4-pin DIP taping

*1 As applying to Safety Standard, following part number should be used.

The information in this document is subject to change without notice.

Document No. P12809EJ2V0DS00 (2nd edition) The mark • shows major revised points.
Date Published June 1998 NS CP(K)
Printed in Japan © 1997
 PS2581L1,PS2581L2

PACKAGE DIMENSIONS (in millimeters)

PS2581L1
4.6±0.35 TOP VIEW
1.0±0.2 4 3

1. Anode
2. Cathode
3. Emitter
6.5+0.5
–0.1

4. Collector

1 2

10.16
7.62
3.5±0.3
4.15±0.4
3.2±0.4

0.35

0.50±0.1
0.25 M
2.54
1.25±0.15 0 to 15˚

PS2581L2
4.6±0.35
1.0±0.2 TOP VIEW
4 3

1. Anode
2. Cathode
3. Emitter
–0.1
6.5+0.5

4. Collector

1 2

10.16
7.62
0.25±0.2
3.5±0.3

1.25±0.15 0.9±0.25
0.25 M
2.54 12.0 MAX.

PHOTOCOUPLER CONSTRUCTION

Parameter Unit (MIN.)

Air Distance 8 mm

Outer Creepage Distance 8 mm

Inner Creepage Distance 4 mm

Isolation Thickness 0.4 mm

2
 PS2581L1,PS2581L2

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified)

Parameter Symbol Ratings Unit

Diode Forward Current (DC) IF 80 mA

Reverse Voltage VR 6 V

Power Dissipation Derating ∆PD/°C 1.5 mW/°C

Power Dissipation PD 150 mW

*1
Peak Forward Current IFP 1 A

Transistor Collector to Emitter Voltage VCEO 80 V

Emitter to Collector Voltage VECO 7 V

Collector Current IC 50 mA

Power Dissipation Derating ∆PC/°C 1.5 mW/°C

Power Dissipation PC 150 mW

*2
Isolation Voltage BV 5 000 Vr.m.s.

Operating Ambient Temperature TA −55 to +100 °C

Storage Temperature Tstg −55 to +150 °C

*1 PW = 100 µs, Duty Cycle = 1 %

*2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output

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 PS2581L1,PS2581L2

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

Parameter Symbol Conditions MIN. TYP. MAX. Unit

Diode Forward Voltage VF IF = 10 mA 1.17 1.4 V

Reverse Current IR VR = 5 V 5 µA

Terminal Capacitance Ct V = 0 V, f = 1.0 MHz 50 pF

Transistor Collector to Emitter Dark ICEO VCE = 80 V, IF = 0 mA 100 nA

Current
*1
Coupled Current Transfer Ratio (IC/IF) CTR IF = 5 mA, VCE = 5 V 80 200 400 %

Collector Saturation Voltage VCE(sat) IF = 10 mA, IC = 2 mA 0.3 V

Isolation Resistance RI-O VI-O = 1.0 kVDC 10

11
Ω

Isolation Capacitance CI-O V = 0 V, f = 1.0 MHz 0.5 pF

Rise Time
*2
tr VCC = 10 V, IC = 2 mA, 3 µs

RL = 100 Ω
*2
Fall Time tf 5

*1 CTR rank
L : 200 to 400 (%)
M : 80 to 240 (%)
D : 100 to 300 (%)
H : 80 to 160 (%)
W : 130 to 260 (%)
N : 80 to 400 (%)
*2 Test circuit for switching time

Pulse Input VCC

PW = 100 µ s
Duty Cycle = 1/10

IF VOUT
50 Ω RL = 100 Ω

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 PS2581L1,PS2581L2

TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified)

DIODE POWER DISSIPATION vs. TRANSISTOR POWER DISSIPATION

AMBIENT TEMPERATURE vs. AMBIENT TEMPERATURE
150 150

Transistor Power Dissipation PC (mW)

Diode Power Dissipation PD (mW)

100 100

50 50

0 25 50 75 100 125 150 0 25 50 75 100 125 150

Ambient Temperature TA (˚C) Ambient Temperature TA (˚C)

FORWARD CURRENT vs. COLLECTOR CURRENT vs.

FORWARD VOLTAGE COLLECTOR TO EMITTER VOLTAGE
100 70
50
TA = +100 ˚C 60
+60 ˚C
Collector Current IC (mA)
Forward Current IF (mA)

+25 ˚C
10 50

5 40
0 ˚C mA
50 mA A
–25 ˚C 30 20 m
1 –55 ˚C 10
0.5 20 IF = 5 mA

10
0.1

0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0 2 4 6 8 10

Forward Voltage VF (V) Collector to Emitter Voltage VCE (V)

COLLECTOR TO EMITTER DARK COLLECTOR CURRENT vs.

CURRENT vs. AMBIENT TEMPERATURE COLLECTOR SATURATION VOLTAGE
40
Collector to Emitter Dark Current ICEO (nA)

50 mA
10 000 20 mA
VCE = 80 V 10 mA
Collector Current IC (mA)

40 V 10
24 V 5 mA
1 000 10 V 5
5V 2 mA

100
IF = 1 mA
1

10 0.5

1
0.1
– 50 –25 0 25 50 75 100 0 0.2 0.4 0.6 0.8 1.0

Ambient Temperature TA (˚C) Collector Saturation Voltage VCE(sat) (V)

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 PS2581L1,PS2581L2

NORMALIZED CURRENT TRANSFER CURRENT TRANSFER RATIO vs.

RATIO vs. AMBIENT TEMPERATURE FORWARD CURRENT

,,,,,,,,,,,,,,,,,,,,,,,,
1.2 450
Normalized Current Transfer Ratio CTR

,,,,,,,,,,,,,,,,,,,,,,,,
1.0,,,,,,,,,,,,,,,,,,,,,,,,
400

Current Transfer Ratio CTR (%)

,,,,,,,,,,,,,,,,,,,,,,,, 350
,,,,,,,,,,,,,,,,,,,,,,,,
0.8,,,,,,,,,,,,,,,,,,,,,,,, 300
,,,,,,,,,,,,,,,,,,,,,,,,
0.6
,,,,,,,,,,,,,,,,,,,,,,,, 250
200

0.4 150
Normalized to 1.0 100
0.2 at TA = 25 ˚C,
IF = 5 mA, VCE = 5 V 50

0 0
–50 –25 0 25 50 75 100 0.05 0.1 0.5 1 5 10 50

Ambient Temperature TA (˚C) Forward Current IF (mA)

SWITCHING TIME vs. SWITCHING TIME vs.

LOAD RESISTANCE LOAD RESISTANCE
50 1 000
IC = 2 mA, IF = 5 mA, tf
tf
VCC = 10 V, tr VCC = 5 V,
CTR = 290 % CTR = 290 %
Switching Time t ( µ s)

Switching Time t ( µ s)

10
100 ts
td
ts

1 10

tr
td
0.1 1
10 50 100 500 1 k 5 k 10 k 100 500 1 k 5 k 10 k 50 k 100 k
Load Resistance RL (Ω) Load Resistance RL (Ω)

FREQUENCY RESPONSE LONG TERM CTR DEGRADATION

1.2
IF = 5 mA,
TYP.
CTR Degradation (Relative Value)

VCE = 5 V
0 1.0
Normalized Gain GV

–5 0.8 IF = 5 mA
TA = 25 ˚C
–10 0.6
100 Ω IF = 5 mA
TA = 60 ˚C
–15 0.4
RL = 1 kΩ
–20 0.2
300 Ω
0
0.5 1 2 5 10 20 50 100 200 500 102 103 104 105

Frequency f (kHz) Time (Hr)

Remark The graphs indicate nominal characteristics.

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 PS2581L1,PS2581L2

TAPING SPECIFICATIONS (in millimeters)

Outline and Dimensions (Tape)

1.75±0.1
2.0±0.1
4.0±0.1 1.55±0.1 4.3±0.2

11.5±0.1

24.0±0.3

12.2±0.1
0.38
2.05±0.1 6.45±0.1
12.0±0.1

Tape Direction
PS2581L2-E3 PS2581L2-E4

Outline and Dimensions (Reel)

2.0±0.5
φ13.0±1.0
φ 80.0±5.0
φ 330

R 1.0
φ 21.0±1.6

24.4+2.0
–0.0

Packing: 1 000 pcs/reel

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 PS2581L1,PS2581L2

RECOMMENDED SOLDERING CONDITIONS

(1) Infrared reflow soldering
• Peak reflow temperature 235 °C (package surface temperature)
• Time of temperature higher than 210 °C 30 seconds or less
• Number of reflows Three
• Flux Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt % is recommended.)

Recommended Temperature Profile of Infrared Reflow

Package Surface Temperature T (˚C)

(heating)
to 10 s
235 ˚C (peak temperature)
210 ˚C
to 30 s

120 to 160 ˚C

60 to 90 s
(preheating)

Time (s)

Caution Avoid removing the residual flux with chlorine-based cleaning solvent after a reflow process.

Peak temperature 235 ˚C or below

(2) Dip soldering

• Temperature 260 °C or below (molten solder temperature)
• Time 10 seconds or less
• Number of times One
• Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of
0.2 Wt % is recommended.)

8
 PS2581L1,PS2581L2

SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884)

Parameter Symbol Speck Unit

Application classification (DIN VDE 0109)

for rated line voltages ≤ 300 Vr.m.s. IV
for rated line voltages ≤ 600 Vr.m.s. III

Climatic test class (DIN IEC 68 Teil 1/09.80) 55/100/21

Dielectric strength maximum operating isolation voltage. UIORM 890 Vpeak

Test voltage (partial discharge test procedure a for type test and random test) Upr 1 068 Vpeak
Upr = 1.2 × UIORM, Pd < 5 pC

Test voltage (partial discharge test procedure b for random test) Upr 1 424 Vpeak
Upr = 1.6 × UIORM, Pd < 5 pC

Highest permissible overvoltage UTR 8 000 Vpeak

Degree of pollution (DIN VDE 0109) 2

Clearance distance > 8.0 mm

Creepage distance > 8.0 mm

Comparative tracking index (DIN IEC 112/VDE 0303 part 1) CTI 175

Material group (DIN VDE 0109) III a

Storage temperature range Tstg −55 to +150 °C

Operating temperature range TA −55 to +100 °C

Isolation resistance, minimum value

VIO = 500 V dc at TA = 25 °C Ω
12
Ris MIN. 10
VIO = 500 V dc at TA MAX. at least 100 °C Ω
11
Ris MIN. 10

Safety maximum ratings (maximum permissible in case of fault, see thermal

derating curve)
Package temperature Tsi 175 °C
Current (input current IF, Psi = 0) Isi 400 mA
Power (output or total power dissipation) Psi 700 mW
Isolation resistance
VIO = 500 V dc at TA = 175 °C (Tsi) Ω
9
Ris MIN. 10

9
 PS2581L1,PS2581L2

[MEMO]

10
 PS2581L1,PS2581L2

[MEMO]

11
 PS2581L1,PS2581L2

CAUTION

Within this device there exists GaAs (Gallium Arsenide) material which is a
harmful substance if ingested. Please do not under any circumstances break the
hermetic seal.

NEPOC is a trademark of NEC Corporation.

No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.

M4 96. 5