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Iranian Journal of Electrical & Electronic Engineering, Vol. 10, No. 2, June 2014 143
maagnitude. In [13], presents a simple anaalytic formulaa
forr calculating the disk cappacitance witth a variablee
num mber of wounnd-in-shield tuurns. In [14]-[19], presentss
meethods of calculating
c tthe series and parallell
cappacitances (tuurn-turn and turn-core cap pacitances) off
cappacitive netwoork of the winnding. The ph henomenon off
maagnetizing inruush in a transsient condition
n was studiedd
in [20].
The purpose of this paper is to associatea thee
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144 Irranian Journaal of Electrical & Electronicc Engineeringg, Vol. 10, No. 2, June 20144
Series anda parallel capacitancess in capacittive In next stepss Eq. (3) willl be more acccurate so thatt
network of the t winding depend on parameters of the winnding parameeters will be included. In n this methodd
winding. So these parameeters can be usefulu in makking [144-19], distancee between twoo adjacent turrns or the turnn
the distributiion of initial impulse
i voltagge more unifoorm andd core are divvided into diffferent parts. According too
and also havve effect on reeduction of thhe AIVF on the t Figg. 5, distance between twoo adjacent turrns is dividedd
winding. into 3 regions. First
F region is the insulatin
ng coating off
In this paaper, the influeence of windinng parameterss on thee first turn, seecond region is the insulaation betweenn
the IVD has been studied. With the resuults of this papper, adjjacent turns and the thirdd region is the t insulatingg
we can unnderstand how to changge the windding coaating of the seecond turn.
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parameters inn order to achhieve a uniformm initial IVD and The capacitaance for the insulating coaating of eachh
reduce the AIVF
A along thee transformer winding and also
a wirre (capacitannce of the fiirst and third d regions) iss
to understandd which param meters will haave a more efffect callculated from Eq. (4) that iss deduced usin
ng Eq. (3).
to make uniiform the IV VD on windinng. Also in this
π .DT .w
research, chaanges in each parameter off the winding for C ici = ε 0 .ε r . (4)
decreasing thhe impulse vooltage on eachh disk have beenb t
analyzed. Inn this paper, capacitive network
n of disk
d Parameters of o Eq. (4) aree shown in Fig.
F 4. In thiss
winding is being studied. We also assuume that windding equuation, DT is the
t average diiameter of the turn, w is thee
has rectanguular cross-secttion. The winding of a typical widdth of turn’s cross-section without insullating coatingg
transformer has been studied using VOLNA V softw
ware andd t is the thicckness of the insulating cooating on onee
[4-7] and [221]. Program m of Calculattion of Impuulse de and ε r is the
sid t relative peermittivity of the insulatingg
Voltages inn Transform mer Winding (VOLNA) is
coaating of each wire.
w
professional software whiich is used inn the companyy of
In transformmer windings, the insulation n between thee
Iran Transforrmer [21].
twoo turns is usuually oil. Thee capacitance between twoo
adjjacent turns inn the area of ccovered by oill (capacitancee
2 Calculatiing Series and Parallel Caapacitance
in the
t second reggion) from Eqq. (5) is calculated:
2.1 Seriess Capacitance
In this seection equatioons for series capacitors (tuurn- π .DT .w
o = ε 0 .ε r ( oil ) .
Coil (5)
turn capacitoors) will be prresented. In Fig.
F 4 a coil with
w p − h − 2t
rectangular winding is shown. For calculating the
capacitance we neglect thhe curvature of the turns and In Eq. (5), p is winding pitch or distaance betweenn
assume the conductors are straight with unlimiited cennters of the cross-sections of the adjaceent turns, h iss
length. Two conductors with w rectanguular cross-secttion thee height of turn’s
t cross-ssection witho out insulatingg
which are sttraight and parallel
p are eqquivalent to two
t coaating and εr(oil)l) is the relativve permittivity
y of oil.
parallel plaanes. From the parallel--plane capaccitor The distance between tw wo adjacent turns in thee
equation we have: trannsformer winnding, in addition to the oiil can includee
oth
her insulations, which is ignored from them. In thee
A disstance of betwween two adjaacent turns, th he capacitancee
C = K .ε 0 (3)
d asssociated withh the first region and thee capacitancee
In Eq. (3)), A is the crooss-section of parallel planees, d asssociated with the second rregion and the capacitancee
is distance of
o between two t parallel planes,
p ε0 is the asssociated withh the third rregion, make up a seriess
permittivity of vacuum annd K is a consstant for windding commposition thhat the orientation of this seriess
leakage effeccts. commbination is shown
s in Fig. 6.
This series combination caan be shown as a Eq. (6):
Cic .Coil
Cttt = (6)
Cic + 2Coiil
It is importannt to note thatt the capacity of associatedd
witth the first andd third regions are equal. By
B substitutingg
qs. (4) and (5) in Eq. (6), thee total capacittance betweenn
Eq
twoo adjacent turrns (turn–turn capacitor) ussing Eq. (7) iss
callculated:
π .DT .w (7))
Cttt = ε 0 .ε r ( oil ) .
⎛ ε r ( oil ) ⎞
p − h − 2t ⎜ 1 −
⎝ ε r ⎟⎠
Fig. 4 View off a coil with recctangular cross--section of turns.
π .DT .h (9)
Coil = ε 0 .ε r ( oil ) .
Z − (w ) − t
2
Parameters of Eq. (9) are shown in Fig. 4. In this
equation, Z is distance between the center of turn’s
cross-section and the outer surface of the core.
According to Fig. 8, in the distance between the turn
Fig. 5 Regions between two adjacent turns. and core capacitance associated with the first region
make a series combination with the capacitance
associated with the second region.
This series combination can be shown as Eq. (10):
Cic .Coil
Ctc = (10)
Cic + Coil
It should be noted that in this section, there is only
one capacitor Cic but in section of 2.1 there were two
Fig. 6 Series combination of capacitances in the distance of
between two adjacent turns. capacitors Cic which were series. So by substituting Eqs.
(8) and (9) in Eq. (10), the total capacitance between the
turn and core (turn-core capacitor) using Eq. (11) is
2.2 Parallel Capacitance calculated:
For calculation of parallel capacitance (turn-core π .DT .h
Ctc = ε 0 .ε r ( oil ) .
capacitor), like section 2.1 the curvature of the turns are
ignored. Also the core is considered as a plane. Also the
( ) ⎛ ε
Z − w − t ⎜1 − r ( oil ) ⎟
2 ⎝ ε
⎞
r⎠
(11)
core is considered as a plane. Also in this section the Eqs. (4) - (11) are based on references [14-19].
basic equation is Eq. (3) which will be more accurate
later. In this method [14-19], the distance between the 3 Study of Capacitive Network of the Disk Winding
turn and the core is divided into two regions. According In Fig. 9, view of a disk winding is shown. In this
to Fig. 7, first region is the insulating coating of the turn type of winding, each disk has several turns that are
and the second region is the insulation between turn and placed in one horizontal plane. In this winding, the turns
core (oil).
In this section, for calculation of the capacitance of
first region (the capacitance of insulating coating of the
turn) is used from Eq. (8):
π . D T .h
C ic = ε 0 .ε r . (8)
t
Fig. 7 Regions between turn and core. Fig. 9 Disk winding with 4 disks that each disk has 5 turns.
146 Iranian Journal of Electrical & Electronic Engineering, Vol. 10, No. 2, June 2014
By increasing the distance of the core outer surface
from the winding (Bcw), DT in Eqs. (7) and (11) and also
Z in Eq. (11) will be increased. This variation causes to
increase the proportion of total series to total parallel
capacitances. According to Fig. 11, these variations will
be caused the IVD on the winding to be uniform and it
will be also decreased α. Also from Table 2 it can be
seen that with increasing Bcw, the impulse voltage on
each disk was decreased. Thus the risk of electrical
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Heidarzadeh & Besmi: Influence of the Parameters of Disk Winding on the Impulse Voltage … 147
Table 3 Changes of the impulse voltage on the disks caused AIVF on the winding will be decreased. This is because
by the changes of Hch. by reducing the Hch, P in Eq. (7) will be reduced and the
Impulse voltage on the disks [%] total series capacitance will be increased. The decrease
of impulse voltage on each disk with decreasing Hch in
Disk Hch=0 Hch=4.5 Hch=10 Hch=20 the Table 3 can be observed.
Number mm mm mm mm Decreasing the thickness of paper insulation of the
1 99.99 97.79 99.99 99.99
conductor (t) has a little effect on the IVD of the disk
2 winding. Since in the capacitive network of disk
91.85 97.19 99.08 100.57
winding the number of series capacitances is more than
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Table 4 Changes of the impulse voltage on the disks caused Table 5 Changes of the impulse voltage on the disks caused
by the changes of t. by the changes of w and h.
Impulse voltage on the disks [%] Impulse voltage on the disks [%]
Disk w=2, w=30.875, w=6.5, w=9.5,
Disk t=0.125 t=0.5 t=1.0 t=1.5
Number mm mm mm mm Number h=30.875 h=2 h=9.5 h=6.5
mm mm mm mm
1 97.53 97.79 98.07 98.33 1 97.98 98.15 97.79 96.97
2 96.77 97.19 97.56 97.90 2 97.32 97.54 97.19 96.19
3 91.63 93.31 94.41 95.25 3 92.66 93.25 93.31 90.95
4 90.90 92.75 93.95 94.87 4 91.97 92.62 92.75 90.22
5 85.56 88.67 90.30 91.53 5 86.35 87.93 88.67 85.06
6 84.78 88.07 89.76 91.01 6 85.49 87.26 88.07 84.31
7 78.90 83.11 85.21 86.68 7 78.76 82.12 83.11 78.54
8 78.04 82.36 84.50 86.02 8 77.77 81.35 82.36 77.68
9 71.32 76.04 78.27 79.93 9 70.37 75.26 76.04 70.92
10 70.33 75.07 77.31 78.99 10 69.28 74.35 75.07 69.92
11 62.46 67.41 69.60 71.00 11 60.85 66.99 67.41 62.16
12 61.29 66.26 68.40 69.82 12 59.59 65.88 66.26 61.00
13 52.47 56.71 58.56 59.79 13 49.77 56.96 56.71 51.92
14 51.16 55.24 57.07 58.27 14 48.32 55.60 55.24 50.55
15 40.09 44.11 45.48 46.16 15 37.65 44.74 44.11 40.05
16 38.40 42.47 43.86 44.49 16 36.15 43.10 42.47 38.51
17 25.47 28.93 30.04 30.69 17 24.13 29.70 28.93 26.01
18 23.57 26.86 27.91 28.56 18 22.34 27.72 26.86 24.11
19 9.72 11.13 11.58 11.90 19 9.17 11.90 11.134 9.93
20 7.73 8.85 9.21 9.46 20 7.287 9.62 8.85 7.90
148 Iranian Journal of Electrical & Electronic Engineering, Vol. 10, No. 2, June 2014
As it is observed from Fig. 15, the decrease of Hch
has the most impact on decreasing of impulse voltage
on the second disk.
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5 Conclusions
In this paper, a typical transformer with disk
winding and with the introduced parameters was
modeled using software VOLNA and then with
Fig. 12 Changes of IVD on the winding caused by the changes changing the parameters of the winding by this
of Hch. software, the variations of the impulse voltage
distribution on the winding and the rate of the variation
of impulse voltage on each disk of the winding were
analyzed. In this study, a disk winding with rectangular
cross-section was considered.
In the curves obtained from the software, reducing
the amplitude of impulse voltage fluctuations means to
reduce the constant of winding voltage distribution and
reduction in these two factors means a more uniform
impulse voltage distribution along the winding.
In this paper was shown that a change in each
parameter of the winding causes the capacitive network
and the proportion of total series to parallel capacitance
to change and this will cause a change in impulse
voltage distribution of the winding.
It was observed that the thickness of paper insulation
of the conductor has lowest effect on impulse voltage
Fig. 13 Changes of IVD on the winding caused by the changes distribution of the winding but the increase of the
of t. distance of the core outer surface to the winding and the
Heidarzadeh & Besmi: Influence of the Parameters of Disk Winding on the Impulse Voltage … 149
decrease of the length of the channel between disks will Electronic Engineering, Vol. 7, No. 4, pp. 283-
improve impulse voltage distribution along the winding. 291, Dec 2011.
This result was also obtained that if in the cross- [12] A. Tavakoli and A. Gholami, “Mitigation of
section of each turn of disk the height (on metal) be transient over voltages generated due to switching
maximum and the width (on metal) be minimum, the operations and lightning in gas-insulated
most uniform of the impulse voltage distribution on the substation (GIS) without extra limiter”, Iranian
disk winding will obtained. Journal of Electrical & Electronic Engineering,
Vol. 7, No. 3, pp. 190-196, Sep. 2011.
[13] R. M. DelVecchio, B. Poulin and R Ahuja.,
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150 Iranian Journal of Electrical & Electronic Engineering, Vol. 10, No. 2, June 2014
Mojtaba Heidarzadeh was born in Sari, Mohammad Reza Besmi was born in
Iran, in 1986. He received the B.Sc. Tehran, Iran, in 1959. He received the
degree in electrical engineering from B.Sc. degree in electrical engineering
Babol Noshirvani University of from Amirkabir University, Iran, in
Technology, Iran, in 2009. Now, he 1989, the M.Tech degree in electrical
studies M.Sc in electrical engineering at engineering from University of Indian
Shahed University, Iran. His research Institute of Technology, Delhi in June
interests are high voltage engineering 1992 and the Ph.D. degree in electrical
and transformer calculations. Now, he is engineering from Newcastle upon Tyne
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working at the Department of Transformer, Iran Transformer University in September 1996. From 1997 to 1999, he was
Research Institute, in section of transformer calculations. with the Niroo Research Institute in Iran. He is currently
Assistant Professor of Electrical Engineering Department. His
current research work is in special electrical machine design.
Heidarzadeh & Besmi: Influence of the Parameters of Disk Winding on the Impulse Voltage … 151