The document provides S-parameter data for an IMS P/N RCX 0302 PW at 50 ohm device from 2 GHz to 40 GHz. The S-parameters (S11, S21, S12, S22) are given in terms of magnitude and angle at each frequency. S11 and S22 represent reflection from port 1 and port 2, while S21 and S12 represent transmission from port 1 to port 2 and vice versa. The magnitudes are close to 1 for transmission parameters and less than 1% for reflection parameters, indicating good transmission and matching across the frequency band.
The document provides S-parameter data for an IMS P/N RCX 0302 PW at 50 ohm device from 2 GHz to 40 GHz. The S-parameters (S11, S21, S12, S22) are given in terms of magnitude and angle at each frequency. S11 and S22 represent reflection from port 1 and port 2, while S21 and S12 represent transmission from port 1 to port 2 and vice versa. The magnitudes are close to 1 for transmission parameters and less than 1% for reflection parameters, indicating good transmission and matching across the frequency band.
The document provides S-parameter data for an IMS P/N RCX 0302 PW at 50 ohm device from 2 GHz to 40 GHz. The S-parameters (S11, S21, S12, S22) are given in terms of magnitude and angle at each frequency. S11 and S22 represent reflection from port 1 and port 2, while S21 and S12 represent transmission from port 1 to port 2 and vice versa. The magnitudes are close to 1 for transmission parameters and less than 1% for reflection parameters, indicating good transmission and matching across the frequency band.
The document provides S-parameter data for an IMS P/N RCX 0302 PW at 50 ohm device from 2 GHz to 40 GHz. The S-parameters (S11, S21, S12, S22) are given in terms of magnitude and angle at each frequency. S11 and S22 represent reflection from port 1 and port 2, while S21 and S12 represent transmission from port 1 to port 2 and vice versa. The magnitudes are close to 1 for transmission parameters and less than 1% for reflection parameters, indicating good transmission and matching across the frequency band.
Device w idth = 0.020" Device substrate thickness = 0.020" Material: alumina ε r = 9.8 DC resistance value (ohms) r = 50 IMS P/N RCX 0302 PW a t 50 ohm SERIES capacitance value (f arads) = cap = 1.469 10-14