The Deal-Grove model describes the relationship between the maximum depth of diffusion (tmax) and the time (t) required for dopant atoms to diffuse into a semiconductor material. The model contains terms for the diffusion coefficient (B), the initial dopant concentration (A0), and a characteristic diffusion time (τ) that depends on material properties and temperature.
The Deal-Grove model describes the relationship between the maximum depth of diffusion (tmax) and the time (t) required for dopant atoms to diffuse into a semiconductor material. The model contains terms for the diffusion coefficient (B), the initial dopant concentration (A0), and a characteristic diffusion time (τ) that depends on material properties and temperature.
Original Description:
Curvas de modelos de oxidación para oxigeno húmedo y seco en wafers de silicio (100) y (111)
The Deal-Grove model describes the relationship between the maximum depth of diffusion (tmax) and the time (t) required for dopant atoms to diffuse into a semiconductor material. The model contains terms for the diffusion coefficient (B), the initial dopant concentration (A0), and a characteristic diffusion time (τ) that depends on material properties and temperature.
The Deal-Grove model describes the relationship between the maximum depth of diffusion (tmax) and the time (t) required for dopant atoms to diffuse into a semiconductor material. The model contains terms for the diffusion coefficient (B), the initial dopant concentration (A0), and a characteristic diffusion time (τ) that depends on material properties and temperature.