AO4478

30V N-Channel MOSFET

General Description Product Summary

The AO4478 uses advanced trench technology to VDS (V) = 30V

provide excellent RDS(ON), low gate charge. This ID = 9A (VGS = 10V)
device is suitable for use as general puspose, PWM and RDS(ON) <19mΩ (VGS = 10V)
a load switch applications. RDS(ON) <26mΩ (VGS = 4.5V)

100% UIS Tested

100% Rg Tested

SOIC-8

Top View Bottom View D

D
D
D
D

G G
S
S S
S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±25 V
Continuous Drain TA=25°C 9.0
Current TA=70°C ID 7.0
C
A
Pulsed Drain Current IDM 60
Avalanche Current C Iar 17
Repetitive avalanche energy L=0.1mHC Ear 14 mJ
TA=25°C 3.1
PD W
Power DissipationB TA=70°C 2.0
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 31 40 °C/W
AD RθJA
Maximum Junction-to-Ambient Steady-State 59 75 °C/W
Maximum Junction-to-Lead C Steady-State RθJL 16 24 °C/W

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4478

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current uA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±25V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 1.6 2 V
ID(ON) On state drain current VGS=10V, VDS=5V 60 A
VGS=10V, ID=9A 16 19
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 25 30
VGS=4.5V, ID=8A 21 26 mΩ
gFS Forward Transconductance VDS=5V, ID=10A 24 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.70 1 V
IS Maximum Body-Diode Continuous Current 4 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 466 560 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 90 pF
Crss Reverse Transfer Capacitance 61 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 3.7 5.6 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 9.3 11 nC
Qg(4.5V) Total Gate Charge 4.3 5.2 nC
VGS=10V, VDS=15V, ID=9A
Qgs Gate Source Charge 1 nC
Qgd Gate Drain Charge 2.3 nC
tD(on) Turn-On DelayTime 5 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=1.65Ω, 8 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 20 ns
tf Turn-Off Fall Time 5 ns
trr Body Diode Reverse Recovery Time IF=9A, dI/dt=500A/µs 7.5 9 ns
Qrr Body Diode Reverse Recovery Charge IF=9A, dI/dt=500A/µs 9.8 nC

A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.

Rev1: Nov. 2010

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4478

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

70 30
VDS= 5V
7V
60 25
10V
50 4.5V
20
40
ID (A)

ID(A)
15
30 4V 125°C
10
20 25°C
VGS= 3V
10 5
2.5V
0 0
0 1 2 3 4 5 0 1 2 3 4 5
VDS (Volts) VGS(Volts)
Figure 1: On-Region Characteristics(Note E) Figure 2: Transfer Characteristics(Note E)

40 2.0

35 1.8
Normalized On-Resistance

30 1.6
VGS=4.5V
RDS(ON) (mΩ )

VGS=4.5V
25 1.4 ID=8A

20 1.2 VGS=10V
ID=9A
15 1.0
VGS=10V
10 0.8

5 0.6
0 5 10 15 20 25 0 25 50 75 100 125 150 175
ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage(Note E) Temperature(Note E)

70 1E+01
ID=9A

60 1E+00

50 1E-01
RDS(ON) (mΩ )

125°C
IS (A)

40 1E-02
25°C
125°C
30 1E-03
25°C
20
1E-04

10
1E-05
2 3 4 5 6 7 8 9 10
VGS (Volts) 0.0 0.2 0.4 0.6 0.8 1.0
Figure 5: On-Resistance vs. Gate-Source VSD (Volts)
Voltage(Note E) Figure 6: Body-Diode Characteristics(Note E)

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4478

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 800

8 VDS=15V
ID=9A 600

Capacitance (pF)
Ciss
VGS (Volts)

6
400
4

200 Coss
2

Crss
0 0
0 2 4 6 8 10 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

70 1000
RDS(ON) limited
ID(A), Peak Avalanche Current

60 TA=25°C
100
10µs
TA=25°C
50
ID (Amps)

10 100µs
40
TA=150°C TA=100°C 1ms
TA=150°C 1 10ms
30
100ms
20 TA=125°C TJ(Max)=150°C
0.1 10s
TA=25°C
10 DC
0.01
0 0.1 1 10 100
0.000001 0.00001 0.0001 0.001 VDS (Volts)
Time in avalanche, tA (s)
Figure 10: Maximum Forward Biased
Figure 9: Single Pulse Avalanche capability Safe Operating Area (Note F)
(Note C)

1000
TJ(Max)=150°C
TA=25°C

100
Power (W)

10

1
0.00001 0.001 0.1 10 1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4478

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=75°C/W
Zθ JA Normalized Transient

1
Thermal Resistance

0.1

PD

0.01
Ton
Single Pulse T

0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4478

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

t on t off

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds EAR= 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

Alpha & Omega Semiconductor, Ltd. www.aosmd.com