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 FDS4501H
May 2001

FDS4501H
Complementary PowerTrench Half-Bridge MOSFET

General Description Features

This complementary MOSFET half-bridge device is • Q1: N-Channel
produced using Fairchild’s advanced PowerTrench
process that has been especially tailored to minimize 9.3A, 30V RDS(on) = 18 mΩ @ V GS = 10V
the on-state resistance and yet maintain low gate RDS(on) = 23 mΩ @ V GS = 4.5V
charge for superior switching performance.
• Q2: P-Channel
Applications
–5.6A, –20V RDS(on) = 46 mΩ @ V GS = –4.5V
• DC/DC converter
RDS(on) = 63 mΩ @ V GS = –2.5V
• Power management
• Load switch
• Battery protection

Q2
DD 5 4
DD
DD
DD 6 3
Q1
7 2
G

G
S2
2

S
G

S 8 1
1
S1

SO-8 SO-8 S

Absolute Maximum Ratings TA = 25°C unless otherwise noted

Symbol Parameter Q1 Q2 Units

V DSS Drain-Source Voltage 30 –20 V
V GSS Gate-Source Voltage ±20 ±8 V
ID Drain Current - Continuous (Note 1a) 9.3 –5.6 A
- Pulsed 20 –20
PD Power Dissipation for Single Operation (Note 1a) 2.5 W
(Note 1b) 1.2
(Note 1c) 1
TJ , TSTG Operating and Storage Junction Temperature Range –55 to +150 °C

Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W
RθJ C Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity
FDS4501H FDS4501H 13” 12mm 2500 units

2001 Fairchild Semiconductor Corporation FDS4501H Rev C(W)

 FDS4501H
Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Type Min Typ Max Units

Off Characteristics
BV DSS Drain-Source Breakdown V GS = 0 V, ID = 250 µA Q1 30 V
Voltage V GS = 0 V, ID = –250 µA Q2 –20
∆BV DSS Breakdown Voltage ID = 250 µA, Referenced to 25°C Q1 24 mV/°C
∆TJ Temperature Coefficient ID = –250 µA, Referenced to 25°C Q2 –13
IDSS Zero Gate Voltage Drain V DS = 24 V, V GS = 0 V Q1 1 µA
Current V DS = –16 V, V GS = 0 V Q2 –1
IGSS Gate-Body Leakage V GS = +20 V, V DS = 0 V Q1 +100 nA
V GS = +8 V, V DS = 0 V Q2 +100
On Characteristics (Note 2)
V GS(th) Gate Threshold Voltage V DS = V GS , ID = 250 µA Q1 1 1.6 3 V
V DS = V GS , ID = –250 µA Q2 –0.4 –0.7 –1.5
∆V GS(th) Gate Threshold Voltage ID = 250 µA, Referenced to 25°C Q1 –4 mV/°C
∆TJ Temperature Coefficient ID = –250 µA, Referenced to 25°C Q2 3
RDS(on) Static Drain-Source V GS = 10 V, ID = 9.3 A Q1 14 18 mΩ
On-Resistance V GS = 10 V, ID = 9.3 A, TJ = 125°C 21 29
V GS = 4.5 V, ID = 7.6 A 17 23
V GS = –4.5 V, ID = –5.6 A Q2 36 46
V GS = –4.5 V, ID = –5.6 A, TJ = 125°C 49 80
V GS = –2.5 V, ID = –5.0 A 47 63
ID(on) On-State Drain Current V GS = 10 V, V DS = 5 V Q1 20 A
V GS = –4.5 V, V DS = –5 V Q2 –20
gFS Forward Transconductance V DS = 5 V, ID = 9.3 A Q1 28 S
V DS = 5 V, ID = –5.6 A Q2 16
Dynamic Characteristics
Ciss Input Capacitance V DS = 10 V, V GS = 0 V, Q1 1958 pF
f = 1.0 MHz Q2 1312
Coss Output Capacitance Q1 424 pF
Q2 240
Crss Reverse Transfer Capacitance Q1 182 pF
Q2 106

FDS4501H Rev C(W)

 Electrical Characteristics (continued) TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Type Min Typ Max Units

Switching Characteristics (Note 2)

td(on) Turn-On Delay Time Q1 Q1 15 27 ns
V DD = 15 V, ID = 1 A, Q2 15 27
tr Turn-On Rise Time V GS = 10V, RGEN = 6 Ω Q1 5 10 ns
Q1 Q2 15 27
td(off) Turn-Off Delay Time V DD = –10 V, ID = –1 A, Q1 38 61 ns
V GS = –4.5V, RGEN = 6 Ω Q2 40 64
tf Turn-Off Fall Time Q1 10 20 ns
Q2 25 40
Qg Total Gate Charge Q1 Q1 17 27 nC
V DS = 15 V, ID = 9.3 A, V GS = 4.5 V Q2 13 21
Qgs Gate-Source Charge Q1 4 nC
Q2 Q2 2.5
Qgd Gate-Drain Charge V DS = 15 V, ID = –2.4 A,V GS = –4.5 V Q1 5 nC
Q2 2.0

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current Q1 2.1 A
Q2 –2.1
V SD Drain-Source Diode Forward V GS = 0 V, IS = 2.1 A (Note 2) Q1 1.2 V
Voltage V GS = 0 V, IS = –2.1 A (Note 2) Q2 –1.2
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.

a) 50°C/W when b) 105°C/W when c) 125°C/W when mounted on a

mounted on a mounted on a 0.04 minimum pad.
1 in2 pad of 2 oz in2 pad of 2 oz
copper copper

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

FDS4501H Rev C(W)

 FDS4501H
Typical Characteristics: Q2

15 4
V GS = -4.5V
-3.0V -2.5V 3.5
12 -2.0V V GS = -1.5V
3

9 2.5
-1.8V
-1.8V
2
6 -2.0V
1.5
-2.5V
3 -1.5V -3.0V
1 -4.5V

0.5
0
0 0.5 1 1.5 2 2.5 0 3 6 9 12 15

-V DS , DRAIN-SOURCE VOLTAGE (V) -ID , DRAIN CURRENT (A)

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.5 0.14
ID = -2.4A ID = -1.2 A
1.4
V GS = -4.5V 0.12
1.3
0.1
1.2

1.1 0.08

1 T A = 125o C
0.06
0.9 TA = 25oC

0.8 0.04

0.7
0.02
-50 -25 0 25 50 75 100 125 150
1 2 3 4 5
T J, JUNCTION TEMPERATURE (oC) -V GS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with

Temperature. Gate-to-Source Voltage.

100
15
V DS = - 5V o V GS = 0V
TA = 125 C
25o C 10
12
-55o C
1 T A = 125o C
9
0.1 25o C

6
0.01 -55 oC

3 0.001

0.0001
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
0 0.5 1 1.5 2 2.5 3

-V GS, GATE TO SOURCE VOLTAGE (V) -V SD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDS4501H Rev C(W)

 FDS4501H
Typical Characteristics: Q2

5 2000
V DS = -5V f = 1MHz
ID = -2.4A
-10V V GS = 0 V
4 1600
-15V CISS

3 1200

2 800

1 400 COSS

CRSS
0 0
0 2 4 6 8 10 12 14 0 5 10 15 20

Q g, GATE CHARGE (nC) -V DS , DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100 20
SINGLE PULSE
Rθ JA = 125°C/W
RDS(ON) LIMIT 1ms
T A = 25°C
10 15
10ms
100ms
1 1s 10
10s
DC
VGS =-4.5V
0.1 SINGLE PULSE 5
Rθ JA = 125 oC/W
T A = 25o C

0.01 0
0.1 1 10 100 0.01 0.1 1 10 100 1000

-V DS , DRAIN-SOURCE VOLTAGE (V) t1 , TIME (sec)

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.

FDS4501H Rev C(W)

 FDS4501H
Typical Characteristics: Q1

21
4
V GS = 10.0V 3.5V
18 6.0V
3.0V 3.5
4.5V V GS = 2.5V
15
3

12
2.5

9
2 3.0V

6
2.5V 1.5 3.5V
4.5V
3 6.0V
1 10V

0
0.5
0 0.5 1 1.5 2
0 5 10 15 20 25
V DS, DRAIN TO SOURCE VOLTAGE (V) ID, DIRAIN CURRENT (A)

Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6 0.08
ID = 9.3A
V GS = 10V ID = 4.7A
1.4
0.06

1.2

0.04 T A = 125o C
1

0.02
0.8 TA = 25 oC

0.6 0
-50 -25 0 25 50 75 100 125 150 2 2.5 3 3.5 4 4.5 5

T J, JUNCTION TEMPERATURE (oC) V GS, GATE TO SOURCE VOLTAGE (V)

Figure 13. On-Resistance Variation with Figure 14. On-Resistance Variation with
Temperature. Gate-to-Source Voltage.

25 100
V DS = 5.0V T A = -55oC 25o C V GS = 0V
10
20
125oC TA = 125o C
1
15
25o C
0.1

10
-55 o C
0.01

5
0.001

0 0.0001
1 1.5 2 2.5 3 3.5 0 0.2 0.4 0.6 0.8 1 1.2

V GS, GATE TO SOURCE VOLTAGE (V) V SD , BODY DIODE FORWARD VOLTAGE (V)

Figure 15. Transfer Characteristics. Figure 16. Body Diode Forward Voltage Variation
with Source Current and Temperature.

FDS4501H Rev C(W)

 FDS4501H
Typical Characteristics Q1

10 3000
f = 1 MHz
ID = 9.3A V DS = 5V V GS = 0 V
10 2500
8
15V CISS
2000
6

1500
4
1000

2 COSS
500
CRSS
0
0
0 5 10 15 20 25 30
0 5 10 15 20
Q g, GATE CHARGE (nC) V DS , DRAIN TO SOURCE VOLTAGE (V)

Figure 17. Gate Charge Characteristics. Figure 18. Capacitance Characteristics.

100 30
SINGLE PULSE
P(pk), PEAK TRANSIENT POWER (W)

100µs 25 RθJ A = 125°C/W

RDS(ON) LIMIT TA = 25°C
10 1ms
10ms 20
100ms
1s
1 10s 15

DC
V GS = 10V 10
0.1 SINGLE PULSE
o
Rθ JA = 125 C/W
5
T A = 25o C

0.01 0
0.01 0.1 1 10 100 0.01 0.1 1 10
VDS , DRAIN-SOURCE VOLTAGE (V) t1 , TIME (sec)

Figure 19. Maximum Safe Operating Area. Figure 20. Single Pulse Maximum
Power Dissipation.

1
D = 0.5

0.2 Rθ JA(t) = r(t) + Rθ JA

o
0.1 0.1 RθJA = 125 C/W
0.05
P(pk)
0.02
0.01 t1
0.01 t2
SINGLE PULSE
T J - TA = P * RθJA(t)
Duty Cycle, D = t 1 / t2
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)

Figure 21. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.

FDS4501H Rev C(W)

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™ FAST  OPTOPLANAR™ SuperSOT™-3
Bottomless™ FASTr™ PACMAN™ SuperSOT™-6
CoolFET™ FRFET™ POP™ SuperSOT™-8
CROSSVOLT™ GlobalOptoisolator™ PowerTrench  SyncFET™
DenseTrench™ GTO™ QFET™ TinyLogic™
DOME™ HiSeC™ QS™ UHC™
EcoSPARK™ ISOPLANAR™ QT Optoelectronics™ UltraFET 
E2CMOSTM LittleFET™ Quiet Series™ VCX™
EnSignaTM MicroFET™ SILENT SWITCHER 
FACT™ MICROWIRE™ SMART START™
FACT Quiet Series™ OPTOLOGIC™ Stealth™
DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H2
 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.

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