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Irlml 5103 PBF
Irlml 5103 PBF
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
Standard Pack
Base Part Number Package Type Orderable Part Number
Form Quantity
IRLML5103TRPbF Micro3™ (SOT-23) Tape and Reel 3000 IRLML5103TRPbF
Thermal Resistance
Parameter Typ. Max. Units
RθJA Maximum Junction-to-Ambient 230 °C/W
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IRLML5103PbF
VSD Diode Forward Voltage -1.2 V TJ = 25°C, IS = -0.60A, VGS = 0V
t rr Reverse Recovery Time 26 39 ns TJ = 25°C, IF = -0.60A
Q rr Reverse RecoveryCharge 20 30 nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
ISD ≤ -0.60A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS, Surface mounted on FR-4 board, t ≤ 5sec.
TJ ≤ 150°C
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IRLML5103PbF
10 10
VGS VGS
TOP - 15V TOP - 15V
- 10V - 10V
- 7.0V - 7.0V
- 5.5V - 5.5V
-I D , Drain-to-Source Current (A)
1 1
-3.0V
-3.0V
10 2.0
I D = -0.60A
R DS(on) , Drain-to-Source On Resistance
-ID , Drain-to-Source Current (A)
TJ = 25°C 1.5
TJ = 150°C
(Normalized)
1 1.0
0.5
VDS = -10V
20μs PULSE WIDTH VGS = -10V
0.1 0.0
A A
3.0 4.0 5.0 6.0 7.0 8.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
-VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)
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IRLML5103PbF
140 20
V GS = 0V, f = 1MHz I D = -0.60A
C iss = Cgs + C gd , Cds SHORTED
VDS = -24V
C rss = C gd
100
C, Capacitance (pF)
Coss
12
80
60
8
Crss
40
4
20
FOR TEST CIRCUIT
SEE FIGURE 9
0 A 0 A
1 10 100 0.0 1.0 2.0 3.0 4.0 5.0
-VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC)
10 10
OPERATION IN THIS AREA LIMITED
BY RDS(on)
-ISD , Reverse Drain Current (A)
TJ = 150°C 100μs
1 1
TJ = 25°C
1ms
TA = 25°C
10ms
TJ = 150°C
VGS = 0V Single Pulse
0.1 A 0.1 A
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 10 100
-VSD , Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V)
RD
VDS
QG
-10V V GS
D.U.T.
QGS QGD RG -
+ VDD
VG
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Charge
Fig 9a. Basic Gate Charge Waveform Fig 10a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
50KΩ
VDS
12V .2μF 90%
.3μF
-
D.U.T. +VDS
VGS
10%
-3mA VGS
td(on) tr t d(off) tf
IG ID
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit Fig 10b. Switching Time Waveforms
1000
Thermal Response (Z thJA )
D = 0.50
100
0.20
0.10
0.05
10
0.02
0.01 PDM
t1
SINGLE PULSE
1 (THERMAL RESPONSE) t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
t1 , Rectangular Pulse Duration (sec)
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IRLML5103PbF
+
- +
-
**
RG • dv/dt controlled by RG +
• I SD controlled by Duty Factor "D"
*
VDD
-
• D.U.T. - Device Under Test
VGS*
[VGS=10V ] ***
Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
[VDD]
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent
Ripple ≤ 5% [ISD]
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IRLML5103PbF
Micro3 (SOT-23) (Lead-Free) Package Outline
Dimensions are shown in millimeters (inches)
S
Y DIME NSIONS
M
6 B MILLIME T ERS INCHES
O
D 5 L MIN MAX MIN MAX
A 0.89 1.12 .036 .044
A1 0.01 0.10 .0004 .0039
A2 0.88 1.02 .035 .040
3 6 b 0.30 0.50 .0119 .0196
E
E1 c 0.08 0.20 .0032 .0078
ccc C B A D 2.80 3.04 .111 .119
1 2
E 2.10 2.64 .083 .103
E1 1.20 1.40 .048 .055
e 0.95 BSC .0375 BSC
B 5 e1 1.90 BSC .075 BSC
e
L 0.40 0.60 .0158 .0236
e1
L1 0.25 BS C .0118 BSC
0 0° 8° 0° 8°
aaa 0.10 .004
bbb 0.20 .008
ccc 0.15 .006
4 H
A A2
L1
A1 3X b aaa C
bbb C A B 3 S URF
0
7 3X L
NOT ES
0.972 1. DIMENS IONING AND TOLERANCING PER AS ME Y14.5M-1994.
3X [.038] 2. DIMENS IONS ARE S HOWN IN MILLIMETERS AND INCHES.
3. CONTROLLING DIMENSION: MILLIMET ER.
2.742 4 DAT UM PLANE H IS LOCAT ED AT T HE MOLD PART ING LINE.
[.1079]
5 DAT UM A AND B T O BE DET ERMINED AT DAT UM PLANE H.
6 DIMENSIONS D AND E1 ARE MEAS URED AT DAT UM PLANE H.
7 DIMENSION L IS T HE LEAD LENGTH FOR S OLDERING T O A SUBS T RAT E.
8. OUT LINE CONFORMS T O JEDEC OUT LINE T O-236AB .
0.802
0.95 3X
[.031]
[.0375]
1.90
[.075]
Notes: This part marking information applies to devices produced after 02/26/2001
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 24, 2014
IRLML5103PbF
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 24, 2014
IRLML5103PbF
†
Qualification information
Consumer
Qualification level ††
(per JEDE C JE S D47F guidelines)
MS L1
Moisture Sensitivity Level Micro3™ (SOT-23) ††
(per JEDE C J-S T D-020D )
RoHS compliant Yes
Revision History
Date Comment
• Updated data sheet with new IR corporate template.
• Updated package outline & part marking on page 7.
4/24/2014
• Added Qualification table -Qual level "Consumer" on page 9.
• Added bullet point in the Benefits "RoHS Compliant, Halogen -Free" on page 1.
9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 24, 2014