Professional Documents
Culture Documents
ECE 305 Homework: Week 11: Solutions
ECE 305 Homework: Week 11: Solutions
!F = i
( E " EF ) = k BT ln # N A &
q q %$ n ('
i
Note:
When
solving
for
the
electric
fields
in
the
depletion
approximation,
we
approximate
the
charge
density
as
a
rectangle
with
an
abrupt
edge
at
x = W .
1c)
Assume
!S = "! F
and
sketch
the
energy
band
diagram
and
the
charge
density,
! ( x )
vs.
position
in
the
semiconductor.
Solution:
Negative
surface
potential
means
that
the
bands
bend
up
at
the
surface.
Majority
carrier
holes
will
pile
up
at
the
surface
and
that
there
is
NO
depletion
region.
Holes
pile
up
(“accumulate”)
near
the
surface,
giving
a
large,
positive
space
charge.
Note
that
the
band
bending
occurs
in
a
much
thinner
region
near
the
surface
as
compared
to
the
case
for
depletion
in
1b)(the
dotted
line).
1d)
Assume
!S = 0
and
sketch
the
energy
band
diagram
and
the
charge
density,
! ( x )
vs.
position
in
the
semiconductor.
Solution:
A
zero
surface
potential
means
no
band
bending.
As
compared
to
1b)
(shown
by
the
dotted
line),
the
depletion
layer
is
deeper,
WT > W ,
because
the
surface
potential
is
larger.
But
now
the
intrinsic
level
at
the
surface
is
as
far
below
the
Fermi
level
as
it
was
above
the
Fermi
level
in
the
bulk.
So
the
concentration
of
electrons
at
the
surface
is
the
same
as
the
concentration
of
holes
in
the
bulk.
This
electron
inversion
charge
piles
up
very
close
to
the
surface.
(For
analytical
calculations,
we
treat
it
as
a
delta-‐function.)
2b)
Compute
the
depletion
layer
thickness,
W ,
when
!S = 2! F .
Solution:
1/2 1/2
# 2K ! & # 2 ) 11.8 ) 8.854 ) 10*14 &
W = % S 0 "S ( =% *19
) 2 ) 0.479 ( = 3.54 ) 10*6 cm
$ 1.6 ) 10 ) 10
18
$ qN A ' '
W = WT = 3.54 ! 10"6 cm = 0.0354 µm = 35.4 nm
2c)
Compute
the
electric
field
at
the
surface,
E S ,
when
!S = 2! F .
Solution:
1/2
# 2qN A &
We
could
use
the
formula:
E S = % "S (
$ KS!0 '
Or
we
could
remember
that:
ES = S =
2! (
2 " 2 " 0.479 ) ( )
= 5.42 " 105 V/cm
E S 2! F = 5.42 " 105 V/cm
#6
W 3.54 " 10
It
is
important
to
note
that
although
we
are
at
the
onset
of
inversion,
we
are
assuming
that
most
of
the
charge
is
still
in
the
depletion
region,
so
that
we
can
still
use
depletion
approximation
equations.
2d)
Compute
the
threshold
voltage,
VT ,
assuming
no
metal-‐semiconductor
workfunction
difference.
(This
is
the
gate
voltage
needed
to
make
!S = 2! F
and
create
an
inversion
layer
in
the
semiconductor.
Solution:
According
to
SDF,
eqn.
(16.26)
K
VG = !S + S x0E S
K0
If
we
define
the
oxide
capacitance
per
cm2
as
K !
Cox = S 0
x0
and
remember
that
the
charge
in
the
semiconductor,
QS ,
is
related
to
the
electric
field
at
the
surface
by
QS = ! K S " 0E S
then
we
can
write
the
VG
expression
as
QS
VG = !S "
Cox
which
is
easier
to
remember.
( ) ( )
QS 2! F = " K S # 0E S 2! F = "11.8 $ 8.845 $ 10"14 $ 5.42 $ 105 = "5.72 $ 10"7 C/cm 2
K O! 0 3.9 " 8.854 " 10#14
Cox = = #7
= 1.73" 10#6 F/cm 2
x0 2 " 10
( ) = 0.958 + 5.72 # 10
QS 2! F "7
( )
VG 2! F = 2! F "
Cox 1.73 # 10"6
= 1.29 V
( )
VG 2! F = VT = 1.29 V
3a)
What
it
the
surface
potential,
!S ?
Solution:
It
is
the
bandbending
in
the
semiconductor.
Since
the
bands
bend
up,
the
surface
potential
is
negative.
From
the
figure,
we
see:
!S = "0.24 V
3b)
What
gate
voltage,
VG ,
is
applied?
Solution:
The
gate
voltage
is
the
difference
between
the
Fermi
level
in
the
metal
and
the
Fermi
level
in
the
semiconductor.
Since
the
Fermi
level
in
the
metal
is
higher
than
the
Fermi
level
in
the
semiconductor,
the
gate
voltage
is
negative.
From
the
figure,
we
see:
VG = !0.96 V
Putting
in
numbers:
N D = ni e(
E F ! Ei ) k BT
= 1010 e0.437 0.026 = 1.99 " 1017
N D = 1.99 ! 1017 cm -3
3e)
What
is
the
width
of
the
depletion
region,
W ?
Solution:
1/2
$ 2K ! '
W = & S 0 ( "#S ) )
% qN D (
We
know
the
surface
potential
from
the
figure,
and
we
have
just
determined
the
doping
density,
so
1/2 1/2
$ 2K ! ' $ 2 * 11.8 * 8.854 * 10"14 '
W = & S 0 ( "#S ) ) =& "19
* 0.24 ) = 3.97 * 10"6 cm
% 1.6 * 10 * 1.99 * 10
17
% qN D ( (
W = 3.97 ! 10"6 cm
3f)
What
is
the
thickness
of
the
oxide?
Solution:
The
volt
drop
across
the
oxide
is
the
electric
field
in
the
oxide
times
the
thickness
of
the
oxide:
HW11
Solutions
(continued):
!"ox
!"ox = E ox xo
xo =
E ox
We
deduced
!"ox in
part
3c).
The
electric
field
in
the
oxide
can
be
determined
from
Gauss’s
Law
(assuming
no
charge
at
the
oxide-‐semiconductor
interface.
K 11.8
K O! 0E ox = K S ! 0E S
E ox = S E S = E = 3.03E S
KO 3.9 S
1/2
$ 2qN D '
E S = !& ( !#S ) )
% KS"0 (
N D = 1.99 ! 10 cm
(from
part
3d)
17 -3
4) A
high-‐frequency
MOS
capacitance
vs.
voltage
characteristic
is
sketched
below.
Answer
the
following
question
assuming
that
the
semiconductor
is
silicon
at
room
temperature.
HW11
Solutions
(continued):
4a)
Is
the
semiconductor
N-‐type
or
P-‐type?
Explain
your
answer.
Solution:
P-type.
Because
accumulation
occurs
for
large
negative
voltages
and
inversion
for
large,
positive
gate
voltages.
4b)
What
is
the
thickness
of
the
oxide?
Solution:
In
accumulation,
the
total
capacitance
is
approximately
the
oxide
capacitance.
K !
C = Cox = O 0 = 1.15 " 10#6 F/cm 2
xo
K O! 0 3.9 " 8.854 " 10#14
xo = = #6
= 3.0 " 10#7 cm
C 1.15 " 10
xo = 3 nm
4c)
What
is
the
thickness
of
the
depletion
layer
in
inversion?
Solution:
We
have
2
capacitors
in
series:
1 1 1
= +
C Cox CS
!1 !1
"1 1 % " 1 1 %
CS = $ ! ' = $ !6
! !6 '
= 0.57 ( 10!6 F/cm 2
# C Cox & # 0.38 ( 10 1.15 ( 10 &
We
also
know
that
the
semiconductor
capacitance
is
related
to
the
depletion
layer
thickness:
K !
CS = S 0
WT
So
K ! 11.8 " 8.854 " 10#14
WT = S 0 = = 1.84 " 10#6 cm
WT = 18.4 nm
CS 0.57 " 10#7
WT = $ S 0 B '
$# q '& NA
Since
WT
is
known
from
the
measurement,
we
can
guess
N A
and
iteratively
adjust
it
until
the
above
equation
is
satisfied.
5) The
problem
concerns
an
MOS
capacitor
that
consists
of
a
metal
electrode,
a
2
nm
thick
silicon
dioxide
layer
with
K O = 3.9 ,
and
a
silicon
substrate
that
begins
at
x = 0 .
The
electric
field
in
the
semiconductor
is
shown
below.
Answer
the
following
questions.
5a)
What
is
the
surface
potential,
!S ?
(Assume
that
the
potential
is
zero
deep
in
the
semiconductor.
Solution:
1
( ) (
!S = E SW = 0.5 " 1.21" 105 " 3.97 " 10#6 = 0.24
2
)
!S = +0.24 V
The
sign
is
positive,
because
the
electric
field
>
0,
so
the
potential
at
the
surface
much
be
greater
than
the
potential
in
the
bulk.