TOSHIBA 2SK30ATM TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK30ATM LOW NOISE PRE-AMPLIFIER, TONE CONTROL AMPLIFIER AND DC-AC Unit in mm HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS @ High Breakdown Voltage : © High Input Impedance © Low Noi : NF=0.54B (Typ) (Vps=15V, Veg=0, Rg=100k0, F=120H2) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC syMpor | ratiNG | uNIr jate-Drain Voltage S = v source Gate-Drain Voltage Veps 30, Vv sour Gate Current 1 10 | ma DRAIN Drain Power Dissipation Pp 100 | mw ‘Junction Temperature Ty 125 °C Storage Temperature Range Tae —55~125 | C_|lrosmma 25F10 Weight : 0.21g (Typ. ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC —_| SYMBOL TEST CONDITION Man. | Typ. |Max.| UNIT| Gate Cut off Current Toss _| Vos=_90V, Vps=0 1.0 | nA Gate-Drain Breakdown Valtage (eR) GDs| VDs=0, Ig=-100,A -0} —|—]v Ipss = = = Drain Current Q88,_| vos=10V, Vos=0 os 65 | mA Gate-Source Cut-off Voltage |VGs (OFF) VDS=10V, Ip=0.1A =o4[ — [-s0[ Vv Forward Transfer sv aov.V, _ elena I¥sl | Vps=10V, Vag=0, f=1KHz =| 12] — | — | ms Input Capacitance Ciss | Vos=0, Vpg=0, f= 1MEz — | e2 | — [or Reverse Transfer lone =o, f= 1MHz Capacitance rss | Vap=—10V, Vpg=0, f=1MHz| — | 26] — | pF Vns=15V, Ves=0 Noise Figure NEL Res toads fSioone — | 05} 50] a Note : Insg Classification _R: 0.30~0.75, 0: 0.60~1.40, Y: 1.20~8.00, GR: 2.60~6.50 ssi0ni62 © TOHImA « conmmaly wong fo mprove fhe Guill) ond te relabiny of Wy produce, Nevanhaen_ semconducc, dances Ty general cn wai fs radi ipcmene “anda of ‘sey, sedge Situations ine maint fier Fos rode eats Sparating ranger at tat forth in the Bont recone products specthetions: Ao Bleae Kegp i mind the precautions and condivone ee¢ for i the TOSitaeSemiendue: Relay Handbook 1997-04-10 13TOSHIBA STATIC CHARACTERISTICS 3 [common source] oS Tem 25°C a ne rr er) GATESOURCE DRAINSOURCE VOLTAGE outage vas. os Ip = Vos_(LOW VOLTAGE REGION) a couox sounce 2 | tee 2 oad § 2 of ae DRAISOURE VoLRAGE Ye Yai - Vos ° conan once . vost? a Ps ce b 8 * 2 [e GATESOURCE VOLTAGE Ves «) 2SK30ATM |p - Vos ‘COMMON SOURCE 5 i 1. ere cee ere) GxTESOURGE VOLTAGE) Vs @) \¥fs| - Ip yp —_[eowvow sovnce Bad vpgeiov E fetkHe E el. 2 : 2g Tae DRAIN CURRENT Ip (mA) Vas (orm) ~ Iss como unc [ioe peti 3 we 3 Tyron ge BE & E T 7 70 DRAIN CURRENT Ipgs (mA) EDeeGRATION tor any intingemens ole! rape or gine al Epimpication o oterwne uncer any ntaletul pcpery e oe © The'hornaton craiad herr & asec fo change wihor hotee Orie Repay, arogs eens Awenies ayy as,8 goss lor We sopleatons ol ou proaucs_ Na lemably ames by TOSMan ‘SP AOSENESRORATON ot nc 7997-04-10 2/3TOSHIBA 2SK30ATM H o [Yel - Iss. « NF - RG 2 "{eoxasox soonce ; conn source gE |e Svogciv. vos Le ; a 2 | po 3 CURRENT Ings (mA? 8 (I NF gt rm & COMMON SOURCE 1 = 4 Vps=is¥ ol es ° SONAL SOURCE RASSTANCE Re) g [om | Ne = vos: 2 Soom ar es covnsox source FREQUENCY ao NF - Ip < ; conn sovnce @ 8 & a E 8 a z a = o 4 8 1 6 2 fe te oR 4 DRAINSOUREE VOLTAGE. Ys 0 ae Pp ~ Te DRAINS CURRENT Ip nt) . 5 g sf iss ~ VS. Gres ~ VoD 5 a conn source 2 880 era: Yos=0 E ze ht ‘ é a aes a 7” 55 | E EE 2s 25 2 “COTY rrr N ~2 -4 6 8 10-2 - -16 4 wo T0015 care DRA oitaG woo ak ANBLENT TEMPERATURE TH CO 1997-04-10 3/3