Professional Documents
Culture Documents
IRFF110 JANTX2N6782 Hexfet Transistors JANTXV2N6782 THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/556 100V, N-CHANNEL
IRFF110 JANTX2N6782 Hexfet Transistors JANTXV2N6782 THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/556 100V, N-CHANNEL
IRFF110
REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6782
HEXFET TRANSISTORS JANTXV2N6782
THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/556
100V, N-CHANNEL
Product Summary
Part Number BVDSS RDS(on) ID
IRFF110 100V .60Ω 3.5A
The HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis- TO-39
tance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as volt- Features:
age control, very fast switching, ease of parelleling n Repetitive Avalanche Ratings
and temperature stability of the electrical parameters. n Dynamic dv/dt Rating
They are well suited for applications such as switch- n Hermetically Sealed
ing power supplies, motor controls, inverters, chop- n Simple Drive Requirements
pers, audio amplifiers and high energy pulse circuits. n Ease of Paralleling
www.irf.com 1
01/22/01
IRFF110
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case — — 8.3
°C/W
R thJA Junction-to-Ambient — — 175 Typical socket mount.
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2 www.irf.com
IRFF110
www.irf.com 3
IRFF110
13
13a&
a&bb
RD
V DS
VGS
D.U.T.
RG
+
-V DD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
VDS
90%
10%
VGS
Fig 9. Maximum Drain Current Vs. td(on) tr t d(off) tf
Case Temperature
Fig 10b. Switching Time Waveforms
www.irf.com 5
IRFF110
1 5V
L D R IV E R
VD S
RG D .U .T +
- VD D
IA S A
10V
20V
tp 0 .0 1 Ω
V (B R )D S S
tp
IAS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms Same Type as D.U.T.
50KΩ
12V .2µF
QG .3µF
+
10 V V
QGS QGD D.U.T. - DS
VGS
VG
3mA
IG ID
Charge Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
6 www.irf.com
IRFF110
Foot Notes:
➀ Repetitive Rating; Pulse width limited by ➂ ISD ≤ 3.5A, di/dt ≤ 75A/µs,
maximum junction temperature. VDD≤ 100V, TJ ≤ 150°C
➁ VDD = 25V, starting TJ = 25°C, Suggested RG =7.5 Ω
Peak IL = 3.5A, ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
LEGEND
1- SOURCE
2- GATE
3- DRAIN
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 01/01
www.irf.com 7