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ECE 331: Introduction To Materials For Electrical Engineers
ECE 331: Introduction To Materials For Electrical Engineers
ECE 331: Introduction To Materials For Electrical Engineers
Electrical Engineers
Course Objective...
Introduce fundamental concepts in Materials
Science and how they are used in ECE
You will learn about:
• material structure
• how structure dictates properties
• how electronic & physical properties are related
This course will help you to:
• use materials properly
• realize new design opportunities with materials
• understand the physics of semiconductor devices
III-V examples
GaAs
InP
InAs
AlGaAs
InGaAs
InGaAsP
G N
GaN
InGaN
ECE applications
are
III V electronics
III-V expanding across
CD Lasers
Fiber pump lasers this entire space!
Space solar
CMOS, BiCMOS,
CMOS BiCMOS
Terrestrial solar, Telecomm
Power CMOS Optoelectronics
thermophotovoltaics
• Optoelectronics:
- tunable light emission/detection wavelengths
- seamless integration with electronic systems
• Alternative Energy:
- clean, renewable, cheap, safe, autonomous
3
2
(10
Re
1
0
-200 -100 0 T (°C)
• Adding “impurity” atoms to Cu increases resistivity.
• Deforming Cu increases resistivity.
onductiviity
opening photograph, 400
Chapter 19, Callister
7e. (Courtesy of
Lockheed 300
(W//m-K)
Missiles and Space
Company, Inc.)
200
hermal Co
100
0
Th
0 10 20 30 40
Adapted from Composition (wt% Zinc)
Fig. 19.4W, Callister Adapted from Fig. 19.4, Callister 7e.
6e. (Courtesy of (Fig. 19.4 is adapted from Metals Handbook:
Lockheed Aerospace p
Properties and Selection: Nonferrous alloys
y
C
Ceramics S
Systems, and Pure Metals, Vol. 2, 9th ed., H. Baker,
Sunnyvale, CA) (Managing Editor), American Society for
(Note: "W" denotes Metals, 1979, p. 315.)
fig. is on CD-ROM.)
100 mm
ECE331 Wi11 lecture 1
MAGNETIC
• Magnetic Storage: • Magnetic Permeability
--Recording medium vs. Composition:
is magnetized by --Adding 3 atomic % Si
recording head. makes Fe a better
recording
g medium!
zation
Fe+3%Si
Magnetiz
Fe
F
M Magnetic Field
Adapted from C.R. Barrett, W.D. Nix, and
Fig. 20.23, Callister 7e. A.S. Tetelman, The Principles of
(Fig 20
(Fig. 20.23
23 is from J
J.U.
U Lemke
Lemke, MRS Bulletin
Bulletin, Engineering Materials, Fig. 1
1-7(a),
7(a), p. 9,
Vol. XV, No. 3, p. 31, 1990.) 1973. Electronically reproduced
by permission of Pearson Education, Inc.,
Upper Saddle River, New Jersey.
Grid Finger
Interconnect
n InPAs window
n/p InGaAs
Emitter/Bas
e
p InPAs BSF
p/n InGaAs TJ
n InPAs Buffer
S iI
Semi-Insulating
l ti InP
I P
23