TN0104

Low Threshold

N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
BVDSS / RDS(ON) VGS(th) ID(ON) Order Number / Package
BVDGS (max) (max) (min) TO-92 TO-243AA* Die†
40V 1.8Ω 1.6V 2.0A TN0104N3 — TN0104ND
40V 2.0Ω 1.6V 2.0A — TN0104N8 —
* Same as SOT-89.
†
Product supplied on 2000 piece carrier tape reels.
MIL visual screening available
7
Product marking for TO-243AA:

Features TN1L*
Low threshold —1.6V max.
Where *=2-week alpha date code
High input impedance
Low input capacitance
Fast switching speeds Low Threshold DMOS Technology
Low on resistance These low threshold enhancement-mode (normally-off) transis-
Free from secondary breakdown tors utilize a vertical DMOS structure and Supertex’s well-proven
silicon-gate manufacturing process. This combination produces
Low input and output leakage devices with the power handling capabilities of bipolar transistors
Complementary N- and P-channel devices and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.

Applications Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
Logic level interfaces – ideal for TTL and CMOS voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Solid state relays
Battery operated systems
Photo voltaic drives
Package Options
Analog switches
General purpose line drivers
Telecom switches

D
Absolute Maximum Ratings G
D
S
Drain-to-Source Voltage BVDSS
TO-243AA
Drain-to-Gate Voltage BVDGS SGD
(SOT-89)
Gate-to-Source Voltage ± 20V TO-92
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
Note: See Package Outline section for dimensions.
* For TO-39 and TO-92, distance of 1.6 mm from case for 10 seconds.

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 TN0104

Thermal Characteristics
Package ID (continuous)* ID (pulsed) Power Dissipation θjc θja IDR* IDRM
@ TC = 25°C °C/W °C/W
TO-92 0.80A 2.40A 1.0W 125 170 0.80A 2.40A
TO-243AA 1.40A 2.90A 1.6W† 15 78† 1.40A 2.90A
* ID (continuous) is limited by max rated Tj.
†
TA = 25°C. Mounted on FR5 Board, 25mm x 25mm x 1.57mm. Signficant P D increase possible on ceramic substrate.

Electrical Characteristics (@ 25°C unless otherwise specified)

Symbol Parameter Min Typ Max Unit Conditions
BVDSS Drain-to-Source
40 V VGS= 0V, ID = 1.0mA
Breakdown Voltage

VGS(th) Gate Threshold Voltage 0.6 1.6 V VGS = VDS, ID = 500µA

∆VGS(th) Change in VGS(th) with Temperature -3.8 -5.0 mV/°C VGS = VDS, ID = 1.0mA
IGSS Gate Body Leakage 0.1 100 nA VGS = ±20V, VDS = 0V
IDSS Zero Gate Voltage Drain Current 1 µA VGS =0V, VDS = Max Rating
VGS = 0V, VDS = 0.8 Max Rating
100 µA
TA = 125°C
ID(ON) ON-State Drain Current 0.35 VGS = 3V, VDS = 20V
0.5 1.1 A VGS = 5V, VDS = 20V
2.0 2.6 VGS = 10V, VDS = 20V
RDS(ON) Static Drain-to-Source 5.0 VGS = 3V, ID = 50mA
ON-State Resistance All Packages 2.3 2.5 VGS = 5V, ID = 250mA
TO-92 1.5 1.8 Ω VGS = 10V, ID = 1A
TO-243AA 2.0 VGS = 10V, ID = 1A
∆RDS(ON) Change in RDS(ON) with Temperature 0.7 1.0 %/°C VGS =10V, ID = 1A,
GFS Forward Transconductance 0.34 0.45 Ω VDS = 20V, ID = 0.5A
CISS Input Capacitance 70
VGS = 0V, VDS = 20V
COSS Common Source Output Capacitance 50 pF
f = 1 MHz
CRSS Reverse Transfer Capacitance 15
td(ON) Turn-ON Delay Time 3.0 5.0
tr Rise Time 7.0 8.0 VDD = 20V, ID = 1A
ns
td(OFF) Turn-OFF Delay Time 6.0 9.0 RGEN = 25Ω
tf Fall Time 5.0 8.0
VSD Diode Forward TO-92 1.2 1.8 VGS = 0V, ISD = 1.0A
Voltage Drop TO-243AA 2.0 V VGS = 0V, ISD = 0.5A
trr Reverse Recovery Time 300 ns VGS = 0V, ISD = 1A
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.

VDD

Switching Waveforms and Test Circuit

10V RL
90% PULSE
INPUT GENERATOR
OUTPUT
0V 10%
Rgen
t(ON) t(OFF)

td(ON) tr td(OFF) tF
D.U.T.
VDD INPUT
10% 10%
OUTPUT
0V 90% 90%

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 TN0104

Typical Performance Curves

Output Characteristics Saturation Characteristics
3.75 3.75

3.0 3.0
VGS = 10V
ID (amperes)

2.25 2.25 VGS = 10V

ID (amperes)
8V 8V

1.5 1.5
6V 6V

0.75 4V 0.75 4V

2V 2V
0 0
0 10 20 30
VDS (volts)
40 50 0 2 4
VDS (volts)
6 8 10
7
Transconductance vs. Drain Current Power Dissipation vs. Case Temperature
0.75 5

VDS = 25V
-25V
TA = -55 ° C
0.60 4

TA = 25° C
GFS (siemens)

0.45 3
PD (watts)

TA = 125 ° C
0.30 2 TO-243AA
(T A = 25°C)

TO-92
0.15 1

0 0
0 0.5 1.0 1.5 2.0 2.5 0 25 50 75 100 125 150
ID (amperes) TC (° C)

Maximum Rated Safe Operating Area Thermal Response Characteristics

10 1.0
TO-243AA
Thermal Resistance (normalized)

TA = 25°C
0.8 PD = 1.6W
TO-39 (DC)
1.0 TO-92 (DC)
ID (amperes)

0.6
TO-243AA (DC)
(T A = 25°C)

0.4
0.1

0.2 TO-92
P D = 1W
T C = 25°C
0.01 0
0.1 1 10 100 0.001 0.01 0.1 1 10
VDS (volts) tp (seconds)

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 TN0104

Typical Performance Curves

BVDSS Variation with Temperature On-Resistance vs. Drain Current
1.3 10

V GS = 5V

1.2 8
BVDSS (normalized)

RDS(ON) (ohms)
1.1 6

VGS = 10V
1.0 4

0.9 2

0.8 0
-50 0 50 100 150 0 1 2
Tj (° C) ID (amperes)

Transfer Characteristics V(th) and RDS Variation with Temperature

3.0 1.4 1.4
TA = -55 ° C

VDS = 25V 25 ° C
2.4 1.2 1.2

RDS(ON) (normalized)
VGS(th) (normalized)
ID (amperes)

1.8 1.0 RDS(ON) @ 5V, 0.25A 1.0

125° C

0.8 V(th) @ 0.5mA 0.8

1.2

0.6 0.6
0.6

0 0.4 0.4
0 2 4 6 8 10 -50 0 50 100 150
VGS (volts) Tj (° C)

Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics

100 10
VDS = 10V
f = 1MHz

8
75 55pF
C (picofarads)

40V
VGS (volts)

6
CISS
50

25 COSS
2

CRSS
50pF
0 0
0 10 20 30 40 0.5 0.65 0.8 0.95 1.1 1.25
VDS (volts) QG (nanocoulombs)

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