Hi TAL INT! Ir INTEGRATED CIRCUIT Tesoo4 ah aet/ Si ra ae cuRcUIT 551001 BPL/BFL/BFTL/ BTRL- 85L TOSHIBA T¢551001 BPL/BFL/BFTL/BTRL- 10L TECHNICAL DATA SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION ‘The TC551001BPL/BFL/BFTLIBTRL is a 1,048,576-bit static random access memory (SRAM) organized as 131,072 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5 V + 10% power supply. Advanced cireuit technology provides both high speed and low power at an operating current of 5 mA/MHz (typ) and a minimum cycle time of 70 ns. Itis automatically placed in low-power mode at 2 A standby current (typ) when chip enable (CE1) is asserted high or (CE2) is asserted low. There are three control inputs. CEI and CE2 are used to select the device and for data retention control, and output enable (OE) provides fast memory access. This device is well suited to various microprocessor system applications where high speed, low power and battery backup are required. The TC551001BPL/BFL) BFTL/BTRL is available in a standard plastic 32-pin dual-in-line package (DIP), plastic 32-pin small-outline package (SOP) and normal and reverse pinout plastic 32-pin thin-small-outline package (TSOP). FEATURES © Low-power dissipation © Access Times (maximum): Operating: 27.5 mW/MHz (typical) "TC551001BPUBFLIBFTUBTRL Standby eurrentof4 cA (maximum) at Ec a “i Ta = 25°C ease Tine Tons [ans © Single power supply voltage of 5 V + 10% CET Access Time 70ns ‘85 ns 100 ns © Power down features using CEI and CE2. [cez Access Time | 70s ns TOU ns Date retention supply voltage of2t05.5V [Be accesTime [| ase] ese] sre ¢ Direct TTL compatibility forall inputs and Packages: DIP92P-600(BPL) (Weight: 4.45 g typ) outputs ‘SOP32-P-525 (BFL) (Weight: 1.04 g typ) ‘TSOP32-P-0820(BFTL) (Weight: 0.34 g typ) ‘TSOP32-P-0820A (BTRL)(Weight: 0.34 g typ) PIN ASSIGNMENT (TOP VIEW) © 32 PIN DIP & SOP © 32 PIN TSOP ne? YD Voo ‘Normal pinout) (reverse pinou) ats 2 316 ais SIMA aus 30D cea ie : : "4 saga za Aw ards 280 ai3 ase 270 as ago eB A Mde 9 ban Sgs 0 a te a2 10 230 aio aqv zh er aod 215 woe vos 8 vor vores 3B woe vose's 180 vos a » a | Groce 17H wos ‘mmm PIN NAMES TO to A [AGT Tape mm PPTs 2 ee Bese wiv Reale Cont OF Output Enable [Pin Name JA 1] Ag | As |Ar3/R/WCE2|Ars|Voo] NC [Ars |Ara|Arz| Ay |As | As | Aa Paar oer es Binne. fi? [Te] 20] a1 | wf | ae [as ae ar [oe || ST S for ta toa nee imps ia are [As [as [as [Ar|v0%v0r|703]enolvo4)v03|vo<|vo7[voa|ceT[AndoE Tan [Power (51 ib ores ry TESS1007BP @ 1996-09-02 he TOSHIBA CORPORATIONINTEGRATED CIRCUIT TCB51001 BPL/BFL/ BETL/BTAL-70L TOSHIBA TC551001 BPL/ BFL/ BFTL/ BTRL- 85L T€551001 BPL/ BFL/BFTL/BTRL- 10L TECHNICAL DATA BLOCK DIAGRAM ce x 2 Veo aN EL I|E |] memony cou <2 ono a B8|/8s "ARRAY aly 35 |I8E)) soxe tae x ae BEWEEH "Ciouesre Ae 8388 wor ‘SENSE AMP COLUNAN ADDRESS COLUMN ADDRESS | REGISTER, LUNN ADDRES uti bt POALAZADARAS AS 08 ot aw a ce MODE ce ce vor to vos | POWER Read u u i Dour topo Outputs Diab L mn n n igh? | to00 x x x Wi Too Standby 4 one x i x igh ipo Note: x = don'tcre H= logic high ABSOLUTE MAXIMUM RATINGS SYMBOL RATING VALUE unit Yoo. Power Supply Voltage = 03 19 70 v Vw Input Voltage = 03" 79) v Wo Input and Output Voltage = 05 to Vop + 05 v Po Power Dissipation 1.00.6" w Trolder Soldering Temperature (103) 260 °c Ts Storage Temperature = 55 t0 150 *c opr. ‘Operating Temperature 010 70 *c * ~ 3.0V when measured et a pulse width of 50 ns * SOP TOSHIBA CORPORATIONINTEGRATED CIRCUIT TOSHIBA TECHNICAL DATA TCB51001 BPL/BFL/ BETL/BTAL-70L TC551001 BPL/ BFL/ BFTL/ BTRL- 85L T€551001 BPL/ BFL/BFTL/BTRL- 10L DC RECOMMENDED OPERATING CONDITIONS (Ta = 0° to 70°C) sr Panaveen wee || rm rut ow vag cox [= 8 Vos Daa Reto uy Wage zo [= [ss ~~ Boviwhenmesred tape witht On DC CHARACTERISTICS (Ta = 0° to 70°C, Vpp = 5V + 10%) sre] —_raaern erconoron van [Lv [wax | or wept teniage cone ms ov van ~ |= pe ba Ey voor ° Output ie OE = Viv. Vour = ol er vn wo | - | - [» ‘ovo ae we Teycle mA came wl - | - [= Operating Curent FOE Is = Wa ww ou Slot e tes Tee [diy covet [ets vn -0av wr vonv ame —[ =a ba) os ops 201 55 Teveme>= [= Noten sandy ned wiZ= Vn = 02V hw intr red forth condo CAPACITANCE (Ta = 25°C, f = 1 MHz) rm ranaeen Ter eovomON vax [ ow] En Input Capacitance 10 | Bi ca Loos Caco ra Note: Ths parameteris periodically sampled and isnot 100% tested, TOSHIBA CORPORATION