The document discusses several topics related to semiconductors and transistors but provides minimal details. It includes:
1) Questions about JFET characteristics, transistor saturation voltage, breakdown mechanisms, MOSFET drain characteristics, and semiconductor conductivity.
2) Questions about diffusion experiments, barrier potential temperature dependence, diode reverse current dependence, combining diodes, and LED color.
3) Questions about the Gunn diode material, internal resistance in BJT analysis, light speed in optical fibers, early communication satellites, digital audio transmission, bandwidth, demodulation, and junction capacitance.
The document discusses several topics related to semiconductors and transistors but provides minimal details. It includes:
1) Questions about JFET characteristics, transistor saturation voltage, breakdown mechanisms, MOSFET drain characteristics, and semiconductor conductivity.
2) Questions about diffusion experiments, barrier potential temperature dependence, diode reverse current dependence, combining diodes, and LED color.
3) Questions about the Gunn diode material, internal resistance in BJT analysis, light speed in optical fibers, early communication satellites, digital audio transmission, bandwidth, demodulation, and junction capacitance.
The document discusses several topics related to semiconductors and transistors but provides minimal details. It includes:
1) Questions about JFET characteristics, transistor saturation voltage, breakdown mechanisms, MOSFET drain characteristics, and semiconductor conductivity.
2) Questions about diffusion experiments, barrier potential temperature dependence, diode reverse current dependence, combining diodes, and LED color.
3) Questions about the Gunn diode material, internal resistance in BJT analysis, light speed in optical fibers, early communication satellites, digital audio transmission, bandwidth, demodulation, and junction capacitance.
voltage bias ow at zero input Duration :75 minute Max.Mar ark : 200 b. current flow onlyly when whe a positive input threshold voltage tage is crossed c. Current flow onlyly when whe a negative input cut-off voltagee bias is crossed Mob : 99335975 975914 d. no cut-off input voltage oltage
Q03- At 250C, thee collector-emitter
coll voltage drop of a silicon transistor at saturation is approximate imately. a. 0.1 V b. 0.3 V c. 0.5V d. 0.7V
Q01-. ON Q04- The reverse bias breakdown
b of high speed silicon transist ransistor is due to a. avalanche breakdown own mechanism m at OFF -VBO both the junctions VBO b. Zener breakdown wn mechanism m at OFF both the junctions c. Zener breakdown wn mechanism m at ON base collector junction d. Zener breakdown wn mechanism m at The above graph depicts base-emitter junction a. drain characteristic off a MO MOSFET b. drain characteristic off an IG IGBT Q05- The conductiv ductivity of a c. volt-ampere characteristic ristic oof a triac semiconductor crystal stal due to any d. volt-ampere characteristic ristic of an current carrier is NOT OT proportional pr to SCR a. mobility of the carrier arrier b. effective density y of states in the Q02- The output currentnt vers versus input conduction band voltage transfer characteristic teristic of an n- c. electronic charge d. surface states in the semiconductor sem c. A larger leakage current Q06- The Haynes-Schockley d. Twice the value of cut-in voltage experiment enables one to determine the Q10- Assume ni = 1.45 x 1010/cm3 for a. diffusion coefficient of majority silicon. In an n-type silicon sample, carriers the donor concentration at 300K is 5 x b. effective mass of the minority 1014/cm3 and corresponds to 1 carriers impurity atom for 108 silicon atoms. c. mobility of the minority carriers The electron and hole concentrations d. Lifetime of the majority carriers in the sample will be a. n = 5 x 1014 / cm3 p = 4.2 x 105/cm3 Q07- The change in barrier potential b. n < 5 x 1014 / cm3 and p > 4.2 x of a silicon p-n junction with 105/cm3 temperature is c. n > 5 x 1014 / cm3 p < 4.2 x 105/cm3 a. 0.0025 Volts per degree C d. n < 5 x 1014 / cm3 p < 4.2 x 105/cm3 b. 0.0250 Volts per degree C c. 0.0030 Volts per degree C Q11-In switching diode fabrication, d. 0.0014 Volts per degree C dopant is introduced into silicon which introduces additional trap Q08 The reverse current of a silicon levels in the material thereby reducing diode is the mean life time of carriers. This a. Highly bias voltage sensitivity dopant is b. Highly temperature sensitive c. Both bias voltage and temperature a. Aluminium b. Platinum sensitive c. Gold d. Copper d. Independent of bias voltage and temperature Q12-The light emitting diode (LED) Q9-A combination of two diodes emits light of a particular colour connected in parallel when compared because to a single diode can withstand a. it is fabricated from a fluorescent material a. Twice the value of peak inverse b. transition between energy levels of voltage the carriers takes place while crossing b. Twice the value of maximum the p-n junction forward current c. heat generated in he diode is a. Indeterminable due to inadequate converted into light data d. The band gap of the semiconductor b. zero c. 4 A d. 8 A material used in the fabrication of the Q16- 245. Which one of the diode is equal to the energy hv of the following photo-detector does not light photon provide gain? a. Photo- transistor b. Photo conductor Q13- The Gunn diode is made of c. Avalanche photodiode a. Silicon b. Germanium d. p-i-n photodiode c. Gallium Arsenide d. Selenium Q17-244. On which bands, do the Q 14- The internal resistance of a optical fibres operate? current source used in the model of a 1. Ultra violet band BJT while analyzing a circuit using 2. Ultra high frequency band BJT is: 3. Visible light band 4. Infra red band a. Very high b. very low c. zero Select the correct answer from the d. Of the order of a few mega-ohms codes given below: a. 1 only b. 1 and 2 only Q15- Velocity of light traveling in an c. 1,2 and 3 d. 1,3 and 4 optical fibre is a. Equal to C Q18-247. what was the first b. Greater than c by a few percent commercial geostationary communication satellite? c. Less than c by a few percent a. INTELSAT 1 b. ECHO d. Much greater than c, approaching c. INSAT- 1A d. SPUTNIK the magnitude of c2 Q19- An audio signal is to be Q15- For the circuit shown in the transmitted digitally. Which is the figure, the current ‘I’ is system best suited for good fidelity? I a. 8bit PCM b. 13bitPCM c. 32bitPCM + d. PCM system with non-uniform quantizer - Q20- The special range of a band pass 4R signal extends from 10MHz to 10.4MHz. what is the minimum sampling frequency required for reconstruction? a. 20MHz b. 20.8MHz c. By increasing the number of c. 20.4MHz d. 0.8MHz quantization levels d. By sending sloping pulses Q21-An amplitude modulated signal occupies a frequency range from Q25- which junction has least 395KHz to 405 KHz It can be junction capacitance? demodulated by which of the a) alloy b) grown following? c) Diffused d) point contact a. Using an envelope detector and filter Q26- Which of the following does not b. Multiplying with 395 KHz local show non-linear V-I characteristics? signal a) Schottky diode c. Multiplying with 405 KHz local b) Tunnel diode signal c) Thermister, at a fixed temperature d. Low pass filtering with cut off at d) p-n junction diode 400 KHz Q27- which one of the following Q22- Duct propagation of microwave oscillators is well suited for the occurs due to which one of the generation of wide range audio- following? frequency sine waves? a. Variation of refractive index with a) RC phase-shift oscillator wavelength b) wein-bridge oscillator b. Variation of refractive index with c) Col-pitts oscillator length d) Hartley oscillator c. Variation of refractive index with height Q28- which one of the following type d. None of the above of negative feedback increases the output resistance of amplifier? Q23 A balanced modulator, is used in a) Current series feedback the generation of which of the b) current series feedback following? c) Current shunt feedback a. DSB-SC signal b. FM signal d) Voltage shunt feedback c. PM signal d. PAM signal Q29- 219. which of the transistor Q24-How can the quantizing noise be models is most preferred for the reduced? analysis of a transistor circuit both at a. By using de-emphasis circuit mid-band and at high frequencies? b. By using RF amplifier in the receiver a) h-parameter model b) y-parameter model Q35- A mod-5 synchronous counter is c) s-parameter model designed using J-K flips flops. The d) hybrid –π model number of counts it will skip (a)2 (b)3 (c)5 (d)10 Q30- which one of the following circuit is used for converting a sine Q.36 The out put frequency of a wave into a square wave? mod-12 counter is 6KHz. Its input a) Astable multivibration frequency is b) Monostable multivibration (a)6KHz (b)500Hz c) Bistable multivibration (c)24KHz (d)72 KHz d) Schmitt trigger Q.37 The output of a clocked Q31- A 16X5 ROM stores sequential circuit is independent of (a)4 words of 16 bits each the input. The circuit can be (b)16 words of 5 bits each represented by (c)16 words of 4 bits each (a)Mealy model (b)Moore model (d)5 words of 16 bits each (c)either Mealy or Moore model (d) neither Mealy nor moore model Q.32 Four ROM chip of 16 X 4 size have their address buses connected Q.38 A finite state machine together. This system will be of size (a)is the same as a clocked sequential (a)64 X 4 (b)16 X16 circuit (c)32 X 8 (d)256X1 (b) consists of combinational logic circuits only Q.33- The race around condition (c) consists of electrical motors occurs in a j-k flip- flop when (d) does not exist in practice (a)both inputs are 0 (b)both inputs are 1 Q.39 Moore type of outputs are (c)the inputs are complementary (a)independent of the inputs (d)any one of the above input (b)dependent only on the inputs combinations is present (c)dependent on present state and inputs Q.34 Dynamic shift registers are (d)dependent on type ofb hardware made up of used implementation (a)dynamic flip- flops Q.40 The slowest logic family is (b)MOS inverters (a)TTL (b)IIL (c)MOS (d)CMOS (c)MOS NAND gates (d)CMOS inverters Q41- The ratio and phase angle errors in potential transformers may be reduced by (a)Increasing the exciting current (a)Maximum demand (b)Increasing the resistance and (b)average maximum demand over leakage reactance in the transformer specified period of time (c) by not employing turns (c)Maximum energy consumption compensation. (d)all of the above. (d)None of the above. Q46- VAb metering can be done by Q42- Capacitive potential using: transformers are used (a)a ball and disc friction gearing (a)for primary winding phase (b)trivector meter voltages above 100 KV (c)bridge connected Rectifiers (b)for Keeping the value of (d)all of the above transformation ratio constant irrespective of the burden by making Q47- A phase sequence indicator certain adjustment rotates clockwise for phase sequence (c)because they are cheaper than of RYB. If the phase sequence is electromagnetic transformers above a changed to BRY it will rotate certain voltage range (a)anticlockwise (b) clockwise (d) all of the above. (c) clockwise or anticlockwise (d)none of the above. Q43- The power in ad.c. circuit is . measured with the help of ammeter Q48- from the point of view of safety, and a voltmeter. The voltmeter is the resistance of earthing electrode connected on the load side. The power should be: indicated by the product of reading of (a)low (b)high (c)medium two instruments (VI) is: (d)The value of resistance of earth (a)the power consumed in the load electrodes does notn affect the safety (b)The sum of the power consumed Q49- Standardization of by load and the voltmeter potentiometers is done in order that (c)The sum of the power consumed they become by load and the ammeter (a)accurate (b)precise (d) none of the above. (c)accurate and direct reading Q44- In the single phase induction (d)accurate and precise meter, in order to obtain true value of Q50- In order that the a.c bridge be energy, The shunt magnet flux should balanced lag behind the applied voltage by (a)I1=I3 and I2=I4 (a)90˚(b)45˚ (c)0˚ (d)none (b)Z1Z4=Z2Z3 (c) ∠θ1 + ∠θ 4 = ∠θ 2 + ∠θ 3 Q45- A Merz price Maximum (d)all of the above. demand indicator indicates: