Transistors

Q1) Calculate the base, collector, and emitter cur- ————————————————————- VCC = 10V
rents and RC such that VEC = 0.5V + . Assume that
transistor is in active region with β = 100, VEB (on) = Q2)Calculate the base, collector, and emitter cur- 4 kΩ
0.6. rents and the C–E voltage for a common-emitter cir-
cuit. Calculate the power dissipation in transistor if it
V + = 5V is in active region with β = 200. 8V
220 kΩ
iE VCC = 10V

580 kΩ 2 kΩ
VBB = 1.5V Soln:
iB
VBB = 4V
RC 220 kΩ
iC VCC = 10V

4 kΩ
IC = βIB = 3.32mA
Soln:
Soln: 8V VCE = 10 − (3.32) ∗ 4 = −3.28V
The conditions operate the transistor in Forward active 220 kΩ Notpossi ble
VCC = 10V
region
iC 8 − 0.7
IB = = 33.2µA
2 kΩ 220KΩ
IC = βIB = 3mA
V + = 5V
220 kΩ VCC = 10V
iE VBB = 4V VCE = 10 − (3 ∗ 2) = 4V
IE = IC + IB = 0.505mA iB
IE = IC + IB = 3.02mA 4 kΩ 10 − 0.2
580 kΩ IC = = 2.45mA
4 − 0.7 4000
VBB = 1.5V IB = = 15µA
iB IC = βIB = 0.5mA
220KΩ
8V
(5 − 0.6) − 1.5 5 − 2.5 220 kΩ
IB = = 5µA R C = β RC Power dissipated = IB .VBE + IC .VCE = 12mW (Ap- IE = IC + IB = 2.483mA
580KΩ 8 − 0.7
iC proximately) IB = = 33.2µA
220KΩ
————————————————————-
Power dissipated = IB .VBE + IC .VCE = 0.513mW (Ap-
Q3)Identify the operating region of the transistor
proximately)
RC = 5KΩ and Calculate the currents, voltages and power dissi-
pated in a circuit if VCE (SAT ) = 0.2V and β = 100. ————————————————————-

1
Q4)Develop the voltage transfer curves for the circuits 6 5 − 0.7 − VI
Using IC = 80IB and IB =
shown. Assume β = 120 cut-off 200K
5 − 0.7 − VI
⇒ Vout = IC .RC = 80.8.
200
4
VCC = 5V

Act
The equation is valid for 0 ≤ Vout ≤ 4.8

Vout

ive
5 kΩ
2 —————–Saturation———————
Vout
VI When Vout = 4.8 , VI = 2.8V
150 kΩ For VI ≤ 2.8V , device remains in saturation
Saturation
0 6
0 1 2 3 4 5 Saturation
VI
4
Soln: ————————————————————-

Act
Vout
Q5)Develop the voltage transfer curves for the circuits

ive
shown. Assume β = 80 2
—————–cut-off——————— V + = 5V
cut-off
iE 0
when VI ≤ 0.7V the transistor is in cut-off
⇒ Vout = 5V 200 kΩ 0 1 2 3 4 5 6
VI VI
iB Vout
—————–Active———————
8 kΩ
iC
VI − 0.7
Using IC = 80IB and IB = ————————————————————-
150K
80(VI − 0.7)5
⇒ Vout = 5 −
150 Soln:
Q6)Calculate the dc voltages at each node and
The equation is valid for 0.2 ≤ Vout ≤ 5 —————–cut-off——————— the dc currents through the elements in a multi-
stage circuit if β = 100 for each transistor. Assume
when VI ≥ 4.3 the transistor is in cut-off
—————–Saturation——————— RB1 = 33.3kΩ , RC1 = 5kΩ, RE1 = 2kΩ, RC2 =
⇒ Vout = 0V
When Vout = 0.2 , VI = 1.9V 1.5kΩ, and RE2 = 2kΩ
For VI ≥ 1.9V , device remains in saturation —————–Active———————

2
 5V ⇒ IRC1 = 1.10mA
5V
RE2 Since VE2 = VC1 + VEB (ON)
RC1 iE2
VE2 ⇒ VE2 = 0.218
iB2
5 − 0.218
Vin = −1.67V iB1 The emitter current IE2 = = 2.39mA
VC2 2
RB1 β
VE1 IC2 = .IE2 = 2.37mA
RC2 1+β
RE1 ⇒ IB2 = 23.7µA
iC2
iE1
⇒ VE1 = IE1 .RE1 − 5 = −2.74V

⇒ VC2 = IC2 .REC2 − 5 = −1.45V

-5V
⇒ VCE1 = VC1 − VE1 = 2.26V

Soln: ⇒ VEC2 = VE1 − VC1 = 1.67V

IE1 = (1 + β)IB1

−1.67 + 5 − 0.7
IB1 = = 11.2µA
33300 + (101 ∗ 2000)
⇒ IC1 = 1.12mA and IE1 = 1.13mA

since

VC1
5− + iB2 = iC1
5000
and

IE2 5 − VE2 5 − (VC1 + 0.7)

IB2 = = =
1+β (1 + β)RE2 (1 + β)RE2
substituting one in another will give

VC1 = −0.482V