NATIONAL INSTITUTE OF TECHNOLOGY, I{T]RUKSHETITA

THEORY EXAMINATION
Question PaPcr

Month and year of the Examination: Nov/Dec,2012

Semester: sth
Progratnme: B.Tech
Subject: Microelectronics
CourseNo.: ECT-309 Maximum Marks: 50

Times allowed: 3:00 Hrs

Number of Questions to be attempted: Five
Total No. of Pages used: 1
Total No. of Questions: Eight
NOTE: Attempt 5 questions in all taking at least one question
from each unit' Each question carry equal
marks.
Unless stated otherwise, the Symbols have their usual meanings
in context with the Subject'

Assume suitably and state, additional data required, if any'

please check the Question Paper for any discrepancy,
The Candidates, before starting to write the solutions, should iect title.
r ofcorrect Course No. and the correct
and also ensure that they huu" b"", d"liu"t"d th" Q'
TTNIT I
(a) Discuss the Molecular Beam Epitaxy?
(b) Write short note on any one:
i).Dry and Wet oxidation.
ii).EGS and MGS.

Discuss how the X-ray lithography and E-beam lithography

are dominating
factors like
ional lithography in nanometer scale regime by enumerating various
resoiution, diffraction, scattering, mask and resist?
UNIT II
Explain Locos? How it is fabricated and what are its applications?
etching is the desired
Discuss, in detail reactive plasma etching? And why Anisotropic
perty of RPE

UNIT III
necessary proc€ss after ion
Describe the Ion Implantation process? Why annealing is
implantation?
How the various
Discuss, the constant source diffusion and limited source diffusion?
diffusion profiles ate analyzedusing Fick's law equations

UNIT IV
{a)Describethevariouspackagefabricationtechnologies?
deposition'
iU; Oit"rtt spuitering process for metallization
what is need of
Explain the steps for fabrication of BJT transistor by isolationtechniques?
ied layer?