Department of EEE, BITS PILANI K. K.

BIRLA GOA CAMPUS

Mid-Semester-Question Paper – Course: Microelectronic Circuits (EEE/ INSTR F 244)

Date – 06-03-2018 Time – 14:00 hours to 14:30 hours

Closed-Book Full-Marks: 40
(iUnless otherwise stated inside a question, use parameters and constants from table given below as
applicable.)

1. For the circuit given below derive the expression of exact voltage gain if  = 0 and exact
output impedance if 0.
5+5=10

Ans. Redrawing the simplified input network (given below) we compute as:

‖
( )
. Noting that, ( )
.
‖

To compute we redraw the simplified output section (given below) and note:
‖ where:

( )( ‖ ‖ ) Overall output impedance, ‖ ,(

)( ‖ ‖ ) -.

2. Calculate the numerical value of input impedance for the circuit given below. Given collector
current of both Q1 and Q2 = 1mA, and
6+4=10
Ans. In this Q1 acts as a CB stage (as given below in the simplified diagram) with a base resistance
= Req. Once again, Q2 resembles an emitter follower stage with Req acting as its output resistance.

Hence we can write: ( )‖ . This leads to *(

)‖ + . ,( )‖ - .

3. An integrated circuit employs a source follower and a common source stage as shown below.
Generate both I1 and I2 from a single current mirror with IREF = 0.3 mA. Show your design
clearly indicating the device dimensions.
3+3=6

Ans.

4. Calculate the voltage gain of the cascade amplifier given below: Given
( ) ( ) and the drain current in the branch is 0.5 mA.
2+2+2+2=8

Ans. We know . Here:

√ ( ) √ . And
‖ where
 . Likewise:
. We also know:
√ ( ) √ . Next:

and
( ‖ )

5. In the circuit given below, v1 represents the signal generated by a microphone. Assuming that
Q1 operates in active region and IB is negligible, determine the small signal parameters. If the
microphone generates a 1mV signal, what are the changes observed in the collector and base
currents?
3+3=6

Ans. We draw the small signal equivalent of the transistor below:

We know: . . Next
. Finally,
For v1 = 1mA, . Again

Parameters Cπ C CCS Is(A) β VA (V)

NPN 100 fF 20 fF 30 fF 100 50
PNP * * * 50 35
Parameters VTh(V) (√ ) (V) * (V-1), for L = 0.5 (A/V2)
NMOS 0.7 0.5 0.9 * 0.1
PMOS -0.8 0.4 0.8 * 0.2
Common Q= 1.6 k= 1.38 ; VDD/ VCC = 2.5V ; VSS/VEE = 0 V; Room Temp.= 270C