P-N Junction Diode Characteristics: Edc Lab Manual

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P-N JUNCTION DIODE CHARACTERISTICS
Department of ECE ASTIET Page 1

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CIRCUIT DIAGRAMS:
MODEL GRAPH:

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CHARACTERISTICS OF PN JUNCTION DIODE
AIM:
1. To Plot the Volt Ampere Characteristics of PN Junction Diode under Forward and Reverse
Bias Conditions.
2. To find the Cut-in voltage, Static Resistance, Dynamic Resistance for Forward Bias
& Reverse Bias.
APPARATUS:
PROCEDURE:
FORWARD BIAS CHARACTERISTICS:
1. Connect the Circuit as per the Circuit Diagram on the bread board.
2. Switch on the Regulated Power Supply and slowly increase the source voltage. Increase the
Diode Current in steps of 2mA and note down the corresponding voltage across the PN
junction Diode under forward Bias condition as per table given below.
3. Take the readings until a Diode Current of 30mA.
4. Repeat the same by using Ge Diode instead of Si Diode.
5. Plot the graph VF versus IF on the graph Sheet in the 1st quadrant as in Fig.
6. From the graph find out the Static & Dynamic forward Bias resistance of the diode

.
7. Observe and note down the cut in Voltage of the diode.

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. TABULAR FORMS:
FORWARD BIAS REVERSE BIAS

SI.NO Voltmeter Reading Ammeter Reading SI.NO Voltmeter Reading Ammeter Reading
. VF (Volts) IF(mA) . VR (Volts) IR (mA)
1 1
2 2
3 3
4 4
5 5
6 6
7 7
8 8
9 9
10 10
PRECAUTIONS:
1. Check the wires for continuity before use.

2. Keep the power supply at Zero volts before Start.
3. All the contacts must be intact.
RESULT:
The V-I Characteristics of the PN Junction Diode are plotted for the both Forward and Reverse Bias
conditions and calculated the Cut in Voltage, Dynamic Forward and Reverse bias resistance.

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CHARACTERISTICS OF ZENER DIODE

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CIRCUIT DIAGRAMS:
VOLTAGE REGULATION:

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MODEL GRAPHS:
ZENER DIODE CHARACTERISTICS:

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CHARACTERISTICS OF ZENER DIODE & LOAD REGULATION
AIM:
1. To Obtain the Forward Bias and Reverse Bias characteristics of a Zener diode.
2. Find out the Zener Break down Voltage from the Characteristics.
3. To Obtain the Load Regulation Characteristics.
APPARATUS:
PROCEDURE:
FORWARD BIAS CHARACTERISTICS:
Diode Current in steps of 2mA and note down the corresponding voltage across the Zener
Diode under forward Bias condition as per table given below.
4. Plot the graph VF versus IF on the graph Sheet in the 1st quadrant as in Fig.
5. From the graph find out the Static & Dynamic forward Bias resistance of the diode.
REVERSE BIAS CHARACTERISTICS:
Diode Current in steps of 2mA and note down the corresponding voltage across the Zener
Diode under Reverse Bias condition as per table given below.
4. Plot the graph VR versus IR on the graph Sheet in the 3rd quadrant as in Fig.
5. From the graph find out the Dynamic Reverse Bias resistance of the diode.
6. Observe and note down the break down Voltage of the diode.

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LOAD REGULATION CHARACTERISTICS:

1. Connections are made as per the circuit diagram.
2. The Regulated power supply voltage is increased in steps.
3. The voltage across the diode (Vz.) remains almost constant although the current through
the diode increases. This voltage serves as reference voltage.
4. The zener current (lz), and the zener voltage (Vz.) are observed and then noted in the
tabular form.
5. A graph is plotted between zener current (Iz) on y-axis and zener voltage (Vz) on x-axis.
TABULAR FORMS:
FORWARD BIAS REVERSE BIAS

SI.NO Voltmeter Reading Ammeter Reading SI.NO Voltmeter Reading Ammeter Reading
. VF (Volts) IF(mA) . VR (Volts) IR (mA)
1 1
2 2
3 3
4 4
5 5
6 6
7 7
8 8
9 9
10 10
REGULATION CHARACTERISTICS:

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ZENER BREAKDOWN VOLTAGE:
Draw a tangent on the reverse Bias Characteristic of the Zener Diode starting from the Knee and
touching most of the points of the curve. The point where the tangent intersects the X-axis is the
Zener Breakdown Voltage.
PRECAUTIONS:

2. Keep the power supply at Zero volts before Start
3. All the contacts must be intact
RESULT:
The Characteristics of the Forward and Reverse biased Zener Diode and the Zener Break Down
Voltage from the Characteristics are Observed.
Zener Breakdown Voltage = Volts.
Forward Bias Resistance = Ohms
Reverse Bias Resistance = Ohms

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HALF-WAVE RECTIFIERS
CIRCUIT DIAGRAMS:
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WITHOUT CAPACITOR FILTER AND WITH CAPACITOR FILTER:
WAVE SHAPES:
HALF-WAVE RECTIFIER

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HALF-WAVE RECTIFIERS
AIM:
1. To Rectify the AC signal and then to find out Ripple factor and percentage of Regulation in
Half wave rectifier with and without Capacitor filter.
APPARATUS:
PROCEDURE:
WITHOUT FILTER:
1. Connecting the circuit on bread board as per the circuit diagram
2. Connect the primary of the transformer to main supply i.e. 230V, 50Hz
3. Connect the decade resistance box and set the RL value to 100Ω
4. Connect the Multimeter at output terminals and vary the load resistance (DRB) from 100Ω to
1KΩ and note down the Vac and Vdc as per given tabular form
5. Disconnect load resistance ( DRB) and note down no load voltage Vdc (V no load).
6. Connect load resistance at 1KΩ and connect Channel – II of CRO at output terminals and CH
– I of CRO at Secondary Input terminals observe and note down the Input and Output Wave
form on Graph Sheet.
7. Calculate ripple factor and Percentage of Regulation.
WITH CAPACITOR FILTER:
1. Connecting the circuit as per the circuit Diagram and repeat the above procedure from steps 2
to 8.

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TABULAR FORMS:
WITHOUT FILTER:
MODEL GRAPHS:

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PRECAUTIONS:
RESULT: Observe Input and Output Wave forms and Calculate ripple factor and percentage of
regulation in Half wave rectifier with and without filter.
Without Filter:
Ripple Factor:
Regulation:
With Capacitor Filter:

Ripple Factor:
Regulation:

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FULL-WAVE RECTIFIERS

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CIRCUIT DIAGRAMS:
WITHOUT FILTER AND WITH FILTER:
WAVE SHAPES:

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FULL-WAVE RECTIFIERS
AIM: To Rectify the AC signal and then to find out Ripple factor and percentage of Regulation
in Full-wave rectifier center tapped circuit with and without Capacitor filter.
APPARATUS:
PROCEDURE:
WITHOUT FILTER:
1. Connecting the circuit on bread board as per the circuit diagram.
2. Connect the primary of the transformer to main supply i.e. 230V, 50Hz
3. Connect the decade resistance box and set the RL value to 100Ω
4. Connect the Multimeter at output terminals and vary the load resistance (DRB) from
100Ω to 1KΩ and note down the Vac and Vdc as per given tabular form
5. Disconnect load resistance ( DRB) and note down no load voltage Vdc (V no load)
6. Connect load resistance at 1KΩ and connect Channel – II of CRO at output terminals and
CH – I of CRO at Secondary Input terminals observe and note down the Input and Output
Wave form on Graph Sheet.
7. Calculate ripple factor
8. Calculate Percentage of Regulation,
1. Connecting the circuit as per the circuit Diagram and repeat the above procedure from
steps 2 to 8.

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TABULAR FORMS:
WITHOUT FILTER:

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PRECAUTIONS:
RESULT: Observe Input and Output Wave forms and Calculate ripple factor and percentage of
regulation in Full-wave rectifier with and without filter.
Without Filter:
Ripple Factor:
Regulation:
With Capacitor Filter:

Ripple Factor:
Regulation:

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CE TRANSISTOR CHARACTERISTICS

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CIRCUIT DIAGRAMS:
MODEL GRAPHS:
1. Plot the Input characteristics by taking IB on y-axis and VBE on x-axis.

2. Plot the Output characteristics by taking IC on the y-axis and VCE on x-axis.

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COMMON EMITTER TRANSISTOR CHARACTERISTICS
AIM:
To plot the Input and Output characteristics of a transistor connected in Common Emitter
Configuration and to find the h – parameters from the characteristics.
APPARATUS:
PROCEDURE:
TO FIND THE INPUT CHARACTERISTICS:
1. Connect the circuit as in the circuit diagram.

2. Keep VBB and VCC in zero volts before giving the supply
3. Set VCE = 1 volt by varying VCC and vary the VBB smoothly with fine control such that base
current IB varies in steps of 5μA from zero upto 200μA, and note down the corresponding
voltage VBE for each step in the tabular form.
4. Repeat the experiment for VCE =2 volts and 3 volts.
5. Draw a graph between VBE Vs IB against VCE = Constant.
TO FIND THE OUTPUT CHARACTERISTICS:
1. Start VEE and VCC from zero Volts.

2. Set the IB = 20μA by using VBB such that, VCE changes in steps of 0.2 volts from zero upto 10
volts, note down the corresponding collector current IC for each step in the tabular form.
3. Repeat the experiment for IE = 40μA and IE = 60μA, tabulate the readings.
4. Draw a graph between VCE Vs IC against IB = Constant.

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TABULAR FORMS:
INPUT CHARACTERISTICS:
OUTPUT CHARACTERISTICS:

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To find the h – parameters:
Calculation of hie:
Mark two points on the Input characteristics for constant VCE. Let the coordinates of these two points
be (VBE1, IB1) and (VBE2, IB2).
VBE2 - VBE1
hie = -------------- ;
IB2 - IB1
Calculation of hre:
Draw a horizontal line at some constant IB value on the Input characteristics. Find VCE2, VCE1, VBE2,
VBE1
VBE2 - VBE1
hrb = ---------------;
VCB2 - VCB1
Calculation of hfe:
Draw a vertical line on the out put characteristics at some constant V CE value. Find Ic2, Ic1 and IB2, IB1 .
IC2 - IC1
hfe = ---------- ;
IB2 - IB1
Calculation of hoe:
On the Output characteristics for a constant value of IB mark two points with coordinates (VCE2 , IC2)
and (VCE1 , IC1) .
IC2 - IC1
hob = --------------- ;
VCE2 - VCE1
RESULTS:
The input and output characteristics are drawn on the graphs and the h parameters are calculated .
hie= --------- ohms. hre= -----------
hoe= -------- mhos. hfe = -----------

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JFET DRAIN & TRANSFER CHARACTERISTICS

(COMMON SOURCE)

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CIRCUIT DIAGRAM:
MODEL GRAPH:

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JFET DRAIN & TRANSFER CHARACTERISTICS (CS)
AIM:
To conduct an experiment on a given JFET and obtain

1) Drain characteristics
2) Transfer Characteristics.
3) To find rd, gm, and μ from the characteristics.
APPARATUS:
PROCEDURE:
DRAIN CHARACTERISTICS:
1. Connect the circuit as per the Fig. 1 and start with VGG and VDD keeping at zero volts.
2. Keep VGG such that VGS = 0 volts, Now vary VDD such that VDS Varies in steps of 1 volt up to
10 volts. And Note down the corresponding Drain current ID
3. Repeat the above experiment with VGS = -1V and -2V and tabulate the readings.
4. Draw a graph VDS Vs ID against VGS as parameter on graph.
5. From the above graph calculate rd and note down the corresponding diode current against the
voltage in the tabular form.
6. Draw the graph between voltage across the Diode Vs Current through the diode in the first
quadrant as shown in fig.
TRANSFER CHARACTERISTICS:
1. Set VGG and VDD at zero volts .keep VDS = 1Volt.

2. Vary VGG such that VGS varies in steps of 0.5 volts. Note down the corresponding Drain
current ID, until ID = 0mA and Tabulate the readings.
3. Repeat the above experiment for VDS = 3.0 Volts and 5.0 Volts and tabulate the readings.
4. Draw graph between VGS Vs ID with VDS as parameter.
5. From the graph find gm.
6. Now μ = gm x rd.

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TABULAR FORM:
DRAIN CHARACTERISTICS:
TRANSFER CHARACTERISTICS:

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CALCULATIONS:
CALCULATION OF rd :
Construct a Triangle on one of the output characteristic for a particular VGS in the active region and
find ΔVDS and ΔID
Now rd = ΔVDS/ ΔID (VGS = constant)
CALCULATION OF gm :
Construct a Triangle on one of the Transfer characteristics for a particular VDS find ΔVGS and ΔID.
Now gm = ΔID/Δ VGS (VDS = constant).
CALCULATION OF μ :
μ = gm x rd.
PRECAUTIONS:

2. Keep the power supply at zero volts before starting the experiment.
4. For a good JFET ID will be ≥ 11.0 mA at VGS = 0.0 volts if not change the JFET.
RESULT:

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SCR CHARACTERISTICS

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SCR SYMBOL:
CIRCUIT DIAGRAM:
MODEL GRAPH:

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SCR CHARACTERISTICS
AIM:
1. To draw the V-I characteristics of SCR.
2. To find the Break-over voltage.
APPARATUS:
THEORY:
It is a four layer semiconductor device being alternate of P-type and N-type silicon. It
consists of 3 junctions J1, J2, J3 the J1 and J3 operate in forward direction and J2 operates in
reverse direction and three terminals called anode A, cathode K, and a gate G. The operation of
SCR can be studied when the gate is open and when the gate is positive with respect to cathode.
When gate is open, no voltage is applied at the gate due to reverse bias of the junction J2 no
current flows through R2 and hence SCR is at cut off. When anode voltage is increased J2 tends
to breakdown.
When the gate positive, with respect to cathode J3 junction is forward biased and J2 is
reverse biased .Electrons from N-type material move across junction J3 towards gate while holes
from P-type material moves across junction J3 towards cathode. So gate current starts flowing,
anode current increase is in extremely small current junction J2 break down and SCR conducts
heavily. When gate is open the break over voltage is determined on the minimum forward
voltage at which SCR conducts heavily. Now most of the supply voltage appears across the load
resistance. The holding current is the maximum anode current gate being open, when break over
occurs.
PROCEDURE:
1. All the connections are made as per the circuit diagram.
2. Keep the gate current (IG) open i.e. IG = 0 mA.
3. Vary the anode to cathode supply voltage and note down the readings of Voltage VAK
(V), and Current IAK (μA).
4. Now Keep the gate current (IG) at a standard value of 10 mA i.e. IG = 10 mA.
5. Again vary the anode to cathode supply voltage and note down the corresponding
readings of Voltage VAK (V), and Current IAK (mA).
6. Plot the graph by taking VAK (V) on x-axis and Current IAK (mA) on y-axis.

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7. Measure the Break-over voltage (VBO) and Holding current (IH) of SCR from the graph.
OBSERVATIONS:
PRECAUTIONS:
1. While doing the experiment do not exceed the ratings of the SCR. This may lead to
damage the SCR.
2. Connect voltmeter and Ammeter in correct polarities as shown in the circuit diagram.
3. Do not switch ON the power supply unless you have checked the circuit connections as
per the circuit diagram.
4. Make sure while selecting the Anode, Cathode and Gate terminals of the SCR
RESULT:
The V-I characteristics of SCR are drawn and the Break-over voltage (VBO), Holding current
(IH) of SCR are found.
1. The Break-over voltage (VBO) of SCR is _____________.
2. The Holding current (IH) of SCR is _________________.

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UJT CHARACTERISTICS

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UJT Symbol:
CIRCUIT DIAGRAM:
MODEL GRAPH:

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UJT CHARACTERISTICS
AIM:
1. To Study and plot the Emitter characteristics of a UJT.
2. To find the peak voltage (Vp) and valley voltage (Vv) for a given UJT.
APPARATUS:
THEORY:
A Uni-junction Transistor (UJT) is an electronic semiconductor device that has only one
junction. The UJT Uni-junction Transistor (UJT) has three terminals an emitter (E) and two
bases (B1 and B2). The base is formed by lightly doped n-type bar of silicon. Two ohmic
contacts B1 and B2 are attached at its ends. The emitter is of p-type and it is heavily doped. The
resistance between B1 and B2, when the emitter is open-circuit is called interbase resistance. The
original uni-junction transistor, or UJT, is a simple device that is essentially a bar of N type
semiconductor material into which P type material has been diffused somewhere along its length.
The 2N2646 is the most commonly used version of the UJT.
The UJT is biased with a positive voltage between the two bases. This causes a potential
drop along the length of the device. When the emitter voltage is driven approximately one diode
voltage above the voltage at the point where the P diffusion (emitter) is, current will begin to
flow from the emitter into the base region. Because the base region is very lightly doped, the
additional current (actually charges in the base region) causes (conductivity modulation) which
reduces the resistance of the portion of the base between the emitter junction and the B2
terminal. This reduction in resistance means that the emitter junction is more forward biased, and
so even more current is injected. Overall, the effect is a negative resistance at the emitter
terminal. This is what makes the UJT useful, especially in simple oscillator circuits. When the
emitter voltage reaches VP, the current starts to increase and the emitter voltage starts to
decrease. This is represented by negative slope of the characteristics which is referred to as the
negative resistance region, beyond the valley point, RB1 reaches minimum value and this region,
VEB proportional to IE
PROCEDURE:
1. All the connections are made as per the circuit diagram.
2. The output Base voltage (VBB) is fixed at 5V by varying VBB.
3. Varying VEE gradually, note down both the Emitter current (IE) and Emitter voltage (VE).

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4. Repeat Step 3 for VBB = 10V.

5. Plot the graph by taking IE (mA) on x-axis and VE (v) on y-axis.
OBSERVATIONS:
PRECAUTIONS:
1. While doing the experiment do not exceed the ratings of the UJT. This may lead to
damage the UJT.
2. Connect voltmeter and Ammeter in correct polarities as shown in the circuit diagram.
4. Make sure while selecting the emitter, base-1 and base-2 terminals of the UJT.
RESULT:
The Emitter characteristics of a UJT are studied and plotted. The peak voltage (Vp) and
valley voltage (Vv) for a given UJT are found.
1. The peak voltage (VP) of a UJT is ___________________.

2. The valley voltage (Vv) of a UJT is _________________.

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DESIGN SELF BIAS CIRCUIT

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CIRCUIT DIAGRAMS:
DESIGN PROCEDURE:
Icq = 5mA, Vceq = 6.0 V, Vcc = 12.0 V, Rc = 1K, S = 25,Vbe=0.6 V.

Find hfe of the transistor
S= (1+) / (1+Re / (Re + Rb))
VB = VCCR2 / (R1 +R2)
RB = R1R2 / (R1+R2)
VB = IBRB+ VBE + (1+)IBRE
VCC = ICRC +VCE+(1+)IBRE
Using the above formula find Re, R1, R2.
TABULAR FORM:

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AIM:
Design a Self-Bias Circuit For the following Specifications
Find the quiescent point (Operating Point) values of ICq and VCEq from the experiment and to
find the maximum signal handling capability of the Amplifier.
APPARATUS:
PROCEDURE:
1. Connect the circuit as per the circuit diagram. Apply Vcc of 12 Volts DC.
2. Find the resulting DC Values of Icq and Vceq.
3. Apply a 1KHz signal from the Signal Generator and observe the O/P on CRO.
4. Increase the I/P voltage slowly until the output waveform starts distortion
5. Note down the input voltage Vi at the point where the output starts distortion
6. This input value is known as maximum signal handling capability.
7. Calculate the gain of the amplifier.
PRECAUTIONS:

2. Keep the power supply at Zero volts before Start
3. All the contacts must be intact
RESULT:
The maximum signal Handling capability of the amplifier = Volts.

Gain of the amplifier =

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CRO OPERATION AND ITS MEASUREMENTS

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CRO BLOCK DIAGRAME

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CRO OPERATION AND ITS MEASUREMENTS

AIM:
To study the operation and applications of Cathode Ray Oscilloscope.
APPARATUS:
THEORY:
An oscilloscope is a measuring device used commonly for measurement of voltage,

current, frequency, phase difference and time intervals. The heart of the oscilloscope is the
cathode ray tube, which generates the electron beam, accelerates the beam to high velocity,
deflects the beam to create the image, and contains the phosphor screen where the electron beam
eventually becomes visible. To accomplish these tasks, various electrical signals and voltages are
required. The power supply block provides the voltages required by the cathode ray tube to
generate and accelerate the electron beam, as well as to supply the required operating voltages
for the other circuits of the oscilloscope. Relatively high voltages are required by the cathode
tubes, on the order of a few thousand volts, for acceleration, as well as a low voltage for the
heater of the electron gun, which emits the electrons. Supply voltages for the other circuits are
various values usually not more than few hundred volts. The oscilloscope has a time base, which
generates the correct voltage to supply the cathode ray tube to deflect this part at a constant time
dependent rate. The signal to be view is fed to you vertical amplifier, which increases the
potential of the input signal to a level that will provide a usable deflection of the electron beam.
To synchronize the horizontal deflection the vertical input, such that the horizontal deflection
starts at the same point of the input vertical signal each time it sweeps, a synchronizing or
triggering circuit is used. This circuit is the link between the vertical input and the horizontal
time base.
PROCEDURE:
1. Select the sine output of the signal generator, set at 1 KHz feed the signal to the vertical
input of CRO.
2. Adjust level and time base to get one or two cycles of the sine signal on the oscilloscope,
and calculate the vertical scale.

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3. Count the number of vertical divisions NV on the scope and find peak-peak level.
Vpp = NV X (Volts/Division)
4. Calculate Vrms as Vpp / 2√2
5. Measure the signal with an AC milli voltmeter as well. It gives the rms value of the
signal.
6. Measure the Time period ‘T’ of the signal by counting the number of horizontal divisions
NH covering the span of one cycle.
T = NH X (Time/Division)
7. Calculate the frequency as f = 1/T.
8. Apply DC voltage from the regulated power supply and measure the DC level on the
scope.
CURRENT MEASUREMENT BY A TEST RESISTOR:
1. Connect a 1KΩ Resistor of enough wattage.

2. Measure the voltage across this resistor on the scope.
3. Calculate current as I = V/R.
PHASE MEASUREMENT USING LISSAJOUS PATTERNS (X-Y MODE):
To Measure the phase difference of two sine waves their frequencies must be equal.
1. Connect a 1Volt peak-peak, 1 KHz sine wave signal from the function generator to the
horizontal input of the CRO.
2. Connect the output of phase shift signal to the vertical input as shown in figure.

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3. Adjust the vertical and horizontal gains properly for good display.
4. Observe Lissajous Patterns for different combinations phase changes.
5. Calculate the phase angle as Sine Φ = A/B
A: Distance between the points where the ellipse crosses the y-axis and the origin.
B: Distance between the origin and the y – co-ordinate of the maxima of the ellipse.
6. Calculate theoretical phase difference as θ = tan-1 (f1/f2)
Where f2 = 1/ (2ΠRC)
f1 = input signal frequency.
OBSERVATIONS:
1. AC VOLTAGE & FREQUENCY MEASUREMENT:

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2. DC VOLTAGE & DC CURRENT MEASUREMENT:
3. PHASE MEASUREMENT USING LISSAJOUS PATTERN:
RESULT: The operation and applications of Cathode ray oscilloscope have been studied.

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BJT-CE AMPLIFIER

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BJT-CE Amplifier
AIM:
1. To obtain the frequency response of the Common Emitter BJT Amplifier.

2. To Measure the Voltage gain and Bandwidth of CE amplifier.
APPARATUS:
THEORY:
The CE amplifier provides high gain &wide frequency response. The emitter lead is
common to both input & output circuits and is grounded. The emitter-base circuit is forward
biased. The collector current is controlled by the base current rather than emitter current. The
input signal is applied to base terminal of the transistor and amplifier output is taken across
collector terminal. A very small change in base current produces a much larger change in
collector current. When +ve half-cycle is fed to the input circuit, it opposes the forward bias of
the circuit which causes the collector current to decrease, it decreases the voltage more –ve. Thus
when input cycle varies through a -ve half-cycle, increases the forward bias of the circuit, which
causes the collector current to increases thus the output signal is common emitter amplifier is in
out of phase with the input signal.

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CIRCUIT DIAGRAM:
PROCEDURE:
1. Connect the circuit as per the circuit diagram.
2. Set Source Voltage Vs = 50mV (say) at 1 KHz frequency, using function generator.
3. Keeping the input voltage constant, vary the frequency from 50Hz to 1MHz in regular
steps and note down the corresponding output voltage.
4. Calculate the Voltage Gain by using the formula
Av = Output voltage (V0) / Input voltage (Vs)
5. Calculate the Voltage Gain in dB by using Voltage Gain Av (dB) = 20 log10 (Vo/Vs).
6. Plot the Graph by taking Voltage gain (dB) on x-axis and frequency (Hz) on y-axis.
7. The Bandwidth of the amplifier is calculated from the graph using the expression,
Bandwidth, BW=f2-f1
Where f1 is lower 3-dB frequency
f2 is upper 3-dB frequency
OBSERVATIONS:

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FREQUENCY RESPONSE:
PRECAUTIONS:
1. While doing the experiment do not exceed the ratings of the transistor. This may lead to
damage the transistor.
3. Make sure while selecting the emitter, base and collector terminals of the transistor.
RESULT:
The Voltage gain and Bandwidth of CE amplifier is measured and the frequency response of the
CE Amplifier is obtained.
1. The Voltage gain of CE Amplifier is ____________________.
2. The Bandwidth of CE Amplifier is ______________________.

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Emitter Follower-CC Amplifier

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Emitter Follower-CC Amplifier
AIM:
1. To obtain the frequency response of the Common Collector BJT Amplifier.
2. To Measure the Voltage gain and Bandwidth of CC amplifier.
APPARATUS:
THEORY:
In common collector amplifier as the collector resistance is made to zero, the collector is
at ac ground that is why the circuit is also called as grounded - collector amplifier or this
configuration is having voltage gain close to unity and hence a change in base voltage appears as
an equal change across the load at the emitter, hence the name emitter follower. In other words
the emitter follows the input signal. This circuit performs the function of impedance
transformation over a wide range of frequencies with voltage gain close to unity. In addition to
that, the emitter follower increases the output level of the signal. Since the output voltage across
the emitter load can never exceed the input voltage to base, as the emitter-base junction would
become back biased. Common collector state has a low output resistance, the circuit suitable to
serve as buffer or isolating amplifier or couple to a load with large current demands.
Characteristics of CC amplifier:
1. Higher current gain

2. Voltage gain is approximately unity
3. Power gain approximately equal to current gain
4. No current or voltage phase shift
5. Large input resistance
6. Small output resistance

|EDC LAB MANUAL
CIRCUIT DIAGRAM:
PROCEDURE:

Bandwidth, BW=f2-f1

|EDC LAB MANUAL
OBSERVATIONS:
FREQUENCY RESPONSE:
PRECAUTIONS:
1. While doing the experiment do not exceed the ratings of the transistor. This may lead to
damage the transistor.
3. Make sure while selecting the emitter, base and collector terminals of the transistor.
RESULT:
The Voltage gain and Bandwidth of CC amplifier is measured and the frequency response of the
CC Amplifier is obtained.
1. The Voltage gain of CC Amplifier is ____________________.
2. The Bandwidth of CC Amplifier is ______________________.

|EDC LAB MANUAL

|EDC LAB MANUAL
FET - CS AMPLIFIER

|EDC LAB MANUAL
FET - CS AMPLIFIER
AIM:
1. To obtain the frequency response of the Common Source FET Amplifier.
2. To Measure the Voltage gain and Bandwidth of CS Amplifier.
APPARATUS:
THEORY:
A field-effect transistor (FET) is a type of transistor commonly used for weak-signal
amplification (for example, for amplifying wireless (signals). The device can amplify analog or
digital signals. It can also switch DC or function as an oscillator. In the FET, current flows along
a semiconductor path called the channel. At one end of the channel, there is an electrode called
the source. At the other end of the channel, there is an electrode called the drain. The physical
diameter of the channel is fixed, but its effective electrical diameter can be varied by the
application of a voltage to a control electrode called the gate. Field-effect transistors exist in two
major classifications. These are known as the junction FET (JFET) and the metal-oxide
semiconductor FET (MOSFET). The junction FET has a channel consisting of N-type
semiconductor (N-channel) or P-type semiconductor (P-channel) material; the gate is made of
the opposite semiconductor type. In P-type material, electric charges are carried mainly in the
form of electron deficiencies called holes. In N-type material, the charge carriers are primarily
electrons. In a JFET, the junction is the boundary between the channel and the gate. Normally,
this P-N junction is reverse-biased (a DC voltage is applied to it) so that no current flows
between the channel and the gate. However, under some conditions there is a small current
through the junction during part of the input signal cycle. The FET has some advantages and
some disadvantages relative to the bipolar transistor. Field-effect transistors are preferred for
weak-signal work, for example in wireless, communications and broadcast receivers. They are
also preferred in circuits and systems requiring high impedance. The FET is not, in general, used
for high-power amplification, such as is required in large wireless communications and broadcast
transmitters. Field-effect transistors are fabricated onto silicon integrated circuit (IC) chips. A
single IC can contain many thousands of FETs, along with other components such as resistors,
capacitors and diodes.

|EDC LAB MANUAL
CIRCUIT DIAGRAM:
PROCEDURE:

Bandwidth, BW=f2-f1
OBSERVATIONS:

|EDC LAB MANUAL
FREQUENCY RESPONSE:
PRECAUTIONS:
1. While doing the experiment do not exceed the ratings of the FET. This may lead to
damage the FET.
3. Make sure while selecting the source, gate and drain terminals of the FET.
RESULT:
The Voltage gain and Bandwidth of CS amplifier is measured and the frequency response curve
of the CS Amplifier is obtained.
1. The Voltage gain of CS Amplifier is ____________________.
2. The Bandwidth of CS Amplifier is ______________________.

|EDC LAB MANUAL

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|EDC LAB MANUAL

P-N JUNCTION DIODE CHARACTERISTICS

Department of ECE ASTIET Page 1

Department of ECE ASTIET Page 2

CHARACTERISTICS OF PN JUNCTION DIODE

Department of ECE ASTIET Page 3

FORWARD BIAS REVERSE BIAS

1. Check the wires for continuity before use.

Department of ECE ASTIET Page 4

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Department of ECE ASTIET Page 6

CHARACTERISTICS OF ZENER DIODE

Department of ECE ASTIET Page 7

Department of ECE ASTIET Page 8

ZENER DIODE CHARACTERISTICS:

Department of ECE ASTIET Page 9

CHARACTERISTICS OF ZENER DIODE & LOAD REGULATION

REVERSE BIAS CHARACTERISTICS:

Department of ECE ASTIET Page 10

LOAD REGULATION CHARACTERISTICS:

FORWARD BIAS REVERSE BIAS

Department of ECE ASTIET Page 11

ZENER BREAKDOWN VOLTAGE:

1. Check the wires for continuity before use.

Department of ECE ASTIET Page 12

Department of ECE ASTIET Page 13

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WITHOUT CAPACITOR FILTER AND WITH CAPACITOR FILTER:

Department of ECE ASTIET Page 16

WITH CAPACITOR FILTER:

Department of ECE ASTIET Page 17

WITH CAPACITOR FILTER:

Department of ECE ASTIET Page 18

With Capacitor Filter:

Department of ECE ASTIET Page 19

Department of ECE ASTIET Page 20

Department of ECE ASTIET Page 21

WITHOUT FILTER AND WITH FILTER:

Department of ECE ASTIET Page 22

7. Calculate ripple factor

8. Calculate Percentage of Regulation,

WITH CAPACITOR FILTER:

Department of ECE ASTIET Page 23

WITH CAPACITOR FILTER:

Department of ECE ASTIET Page 24

With Capacitor Filter:

Department of ECE ASTIET Page 25

Department of ECE ASTIET Page 26

Department of ECE ASTIET Page 27

1. Plot the Input characteristics by taking IB on y-axis and VBE on x-axis.

Department of ECE ASTIET Page 28

COMMON EMITTER TRANSISTOR CHARACTERISTICS

1. Connect the circuit as in the circuit diagram.

TO FIND THE OUTPUT CHARACTERISTICS:

1. Start VEE and VCC from zero Volts.

Department of ECE ASTIET Page 29

Department of ECE ASTIET Page 30