Observation of Photoluminescence Characteristics of Diamond

Color Centers of Polycrystalline Diamond Films Grown on

Various Silicon Oxide Substrates by CVD Process
K. Srinivasu 1†, Y.C. 2
Chen , C.J. 1
Yeh , W.H. 2
Chang , K.C 1
Leou , I.N Lin3

1Department of Engineering and System Science, NTHU, Hsinchu, Taiwan 30013, R.O.C.
2Department of Electrophysics, NCTU, Hsinchu, Taiwan 30013, R.O.C.
3Department of Physics, Tamkang University, Tamsui 251, Taiwan, R.O.C.
†e-mail:space.309@gmail.com

Introduction Motivation
 Diamond is an exclusive material for creation of different color centers due  MPE CVD process used to grow three kinds of
to its wideband gap. diamond films on three types of Silicon oxide
 Nitrogen Vacancy (NV) center, Silicon Vacancy centers have robust substrates.
applications in quantum computation, quantum cryptography and bio-  Investigate the PL properties from all these
imaging. samples and identify the color centers.
 o
NV center can be characterized by ZPL at 575 nm for (NV ), 637  Analyze the surface morphology, micro-structure
-
nm for (NV ) and wide phonon side bands around ZPL in the PL in order to find the influence on optical properties.
spectrum and SiV with narrow ZPL at 739 nm.  Direct synthesis of the color center nano-diamonds on
 Color centers in diamond are created by plasma CVD growth process. optical fiber.

Experimental Process
Diamond growth by MPECVD Crystal structure & PL
PL measurement Setup
Sample Gas Pressu MW Substrate NV center NV center
name composition re(Torr) Power(W) temperature(oC)
MCD CH4/H2(1/99) 30 1600 550
NCD CH4/H2 /Ar 70 1400 580
(1/50/49)
UNCD CH4 /Ar 120 1200 470
(1/99)
SiV center SiV center
Diamond color centers

SiV center
N B NV center

Results and Discussion

SEM PL and PL mapping

TEM UV-Raman Future work

Conclusions Acknowledgments:
 NV centers have been observed in MCD and NCD, but not in UNCD. Authors would like to acknowledges
 In contrast to NV center, SiV center are significantly enhanced by reduction in Ministry of Science and Technology, Taiwan
diamond grain size and more prominent for UNCD. For financial support.
 PL Mapping of all these samples reveals the observed max photon count rate of
in the order of 105 / sec. References:
 The absence of NV in UNCD can be attributed to the encapsulation of ultra-small 1. I Aharonovich et al. Rep. Prog. Phys. 74 (2011)
diamond grain in the environment of non-diamond carbon phases such as 076501
graphitic or amorphous carbon, as revealed by TEM analysis. 2. Orwa J O, et al. J. Lumin. 130 1646–54 (2010)
 Successfully synthesized the SiV-UNCD clusters directly on optical fibers.