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Sheet
there may be errors on this, make sure you know when to use the formulas, don’t use
this as substitute for studying, blah blah blah…)
pn junction
Semiconductor Physics in thermal equilibrium
mass-action law* *under T.E. (or quasi-equilibrium) charge neutrality Æ N a x po = N d xno
2 2
n o p o = ni where ni = 1020 cm-3 at 300K
built-in potential φ B = φn − φ p
2
n depletion regions
n-type: no ≅ N d & po ≅ i
Nd ⎛ 2ε φ ⎞⎛ N d ⎞ ⎛ 2ε φ ⎞⎛ N a ⎞
x po = ⎜⎜ s B ⎟⎟⎜⎜ ⎟⎟ xno = ⎜⎜ s B ⎟⎟⎜⎜ ⎟⎟
ni
2
⎝ qN a ⎠⎝ N d + N a ⎠ ⎝ qN d ⎠⎝ N d + N a ⎠
p-type: po ≅ N a & no ≅
Na
⎛ 2ε φ ⎞⎛ 1 1 ⎞
X do = x po + x no = ⎜⎜ s B ⎟⎟⎜⎜ + ⎟⎟
drift velocity* *for v < vsat only (vsat = 10 cm/s) 7 ⎝ q ⎠⎝ N a N d ⎠
vdn = − µ n E (electron) vdp = µ p E (hole)
n+p junction p+n junction
*Note: in accumulation, gate charge is actually negative, charge in semiconductor is positive (because VGB<VFB).