MJE13003 Switchmodet Series NPN Silicon Power Transistor: - C - C - C Is 290 Ns (Typ)

MJE13003
SWITCHMODEt Series NPN

Silicon Power Transistor
These devices are designed for high−voltage, high−speed power
switching inductive circuits where fall time is critical. They are
particularly suited for 115 and 220 V SWITCHMODE applications
such as Switching Regulators, Inverters, Motor Controls, http://onsemi.com
Solenoid/Relay drivers and Deflection circuits.
1.5 AMPERES
Features
NPN SILICON POWER
• Reverse Biased SOA with Inductive Loads @ TC = 100_C
• Inductive Switching Matrix 0.5 to 1.5 A, 25 and 100_C TRANSISTORS
tc @ 1 A, 100_C is 290 ns (Typ) 300 AND 400 VOLTS
• 700 V Blocking Capability 40 WATTS
• SOA and Switching Applications Information
• Pb−Free Package is Available*
MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
Rating Symbol Value Unit
ÎÎÎ
ÎÎÎÎÎÎÎ
Collector−Emitter Voltage VCEO(sus) 400 Vdc
ÎÎÎ
ÎÎÎÎÎÎÎ
TO−225
Collector−Emitter Voltage VCEV 700 Vdc
CASE 77
ÎÎÎ
ÎÎÎÎÎÎÎ
Emitter Base Voltage VEBO 9 Vdc STYLE 3
3
ÎÎÎ
ÎÎÎÎÎÎÎ
Collector Current − Continuous IC 1.5 Adc 2 1
− Peak (Note 1) ICM 3
ÎÎÎ
Base Current
ÎÎÎÎÎÎÎ − Continuous IB 0.75 Adc
ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
− Peak (Note 1) IBM 1.5
ÎÎÎ
ÎÎÎÎÎÎÎ
Emitter Current − Continuous IE 2.25 Adc MARKING DIAGRAM
− Peak (Note 1) IEM 4.5
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
Total Power Dissipation @ TA = 25_C
ÎÎÎ
Derate above 25_C
PD 1.4
11.2
W
mW/_C
1 BASE
ÎÎÎ
ÎÎÎÎÎÎÎ
Total Power Dissipation @ TC = 25_C PD 40 W YWW
Derate above 25_C 320 mW/_C 2 COLLECTOR JE
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ
Operating and Storage Junction
ÎÎÎÎÎÎÎ
ÎÎÎ
Temperature Range
THERMAL CHARACTERISTICS
TJ, Tstg –65 to
+150
_C 3 EMITTER
13003G
ÎÎÎ
ÎÎÎÎÎÎÎ
Characteristic Symbol Max Unit
ÎÎÎ
ÎÎÎÎÎÎÎ
Y = Year
Thermal Resistance, Junction−to−Case RqJC 3.12 _C/W
WW = Work Week
ÎÎÎ
ÎÎÎÎÎÎÎ
Thermal Resistance, Junction−to−Ambient RqJA 89 _C/W JE13003 = Device Code
G = Pb−Free Package
ÎÎÎ
ÎÎÎÎÎÎÎ
Maximum Load Temperature for Soldering TL 275 _C
Purposes: 1/8″ from Case for 5 Seconds
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not ORDERING INFORMATION
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and Device Package Shipping
reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. MJE13003 TO−225 500 Units/Box
MJE13003G TO−225 500 Units/Box

(Pb−Free)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006 1 Publication Order Number:

January, 2006 − Rev. 2 MJE13003/D
MJE13003
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Characteristic Symbol Min Typ Max Unit
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
OFF CHARACTERISTICS (Note 2)
ÎÎÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector−Emitter Sustaining Voltage (IC = 10 mA, IB = 0) VCEO(sus) 400 − − Vdc
ÎÎÎÎÎ
ÎÎÎ
Collector Cutoff Current
ÎÎÎ
ÎÎÎÎ
ÎÎÎ ICEV mAdc
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(VCEV = Rated Value, VBE(off) = 1.5 Vdc) − − 1
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C) − − 5
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Emitter Cutoff Current (VEB = 9 Vdc, IC = 0)
IEBO − − 1 mAdc
SECOND BREAKDOWN
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
Second Breakdown Collector Current with bass forward biased IS/b See Figure 11 −
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
Clamped Inductive SOA with base reverse biased
RBSOA See Figure 12 −
DC Current Gain ÎÎÎÎÎ

ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ON CHARACTERISTICS (Note 2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ hFE −
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 0.5 Adc, VCE = 2 Vdc) 8 − 40
(IC = 1 Adc, VCE = 2 Vdc) 5 − 25
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector−Emitter Saturation Voltage VCE(sat) Vdc
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 0.5 Adc, IB = 0.1 Adc) − − 0.5
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 1 Adc, IB = 0.25 Adc) − − 1
(IC = 1.5 Adc, IB = 0.5 Adc) − − 3
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 1 Adc, IB = 0.25 Adc, TC = 100_C) − − 1
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Base−Emitter Saturation Voltage VBE(sat) Vdc
(IC = 0.5 Adc, IB = 0.1 Adc) − − 1
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 1 Adc, IB = 0.25 Adc) − − 1.2
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 1 Adc, IB = 0.25 Adc, TC = 100_C) − − 1.1
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Current−Gain − Bandwidth Product (IC = 100 mAdc, VCE = 10 Vdc, f = 1 MHz) fT 4 10 − MHz
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Cob − 21 − pF
SWITCHING CHARACTERISTICS
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
Resistive Load (Table 1)
ÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Delay Time
ÎÎÎÎÎÎÎÎ
Rise Time ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(VCC = 125 Vdc, IC = 1 A,
td
tr
−
−
0.05
0.5
0.1
1
ms
ms
ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
IB1 = IB2 = 0.2 A, tp = 25 ms,
Storage Time Duty Cycle v 1%) ts − 2 4 ms
ÎÎÎÎÎÎÎÎ
Fall Time
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
tf − 0.4 0.7 ms
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Inductive Load, Clamped (Table 1, Figure 13)
ÎÎÎÎÎÎÎÎ
Storage Time
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ tsv − 1.7 4 ms
ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 1 A, Vclamp = 300 Vdc,
Crossover Time tc − 0.29 0.75 ms
IB1 = 0.2 A, VBE(off) = 5 Vdc, TC = 100_C)
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Fall Time tfi − 0.15 − ms
2. Pulse Test: PW = 300 ms, Duty Cycle v 2%.
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2
MJE13003
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)

80 2
60 TJ = 25°C
TJ = 150°C
1.6
40
hFE , DC CURRENT GAIN
30 25°C
1.2 IC = 0.1 A 0.3 A 0.5 A 1A 1.5 A
20
−55 °C 0.8
10
8 0.4
6 VCE = 2 V
VCE = 5 V
4 0
0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 2 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2
IC, COLLECTOR CURRENT (AMP) IB, BASE CURRENT (AMP)
Figure 1. DC Current Gain Figure 2. Collector Saturation Region
1.4 0.35
VBE(sat) @ IC/IB = 3 0.3

1.2 VBE(on) @ VCE = 2 V
0.25 IC/IB = 3
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
1
TJ = −55°C 0.2 TJ = −55°C
25°C 0.15 25°C

0.8
25°C 0.1
0.6 150°C 150°C
0.05
0.4 0
0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 2 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 2
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 3. Base−Emitter Voltage Figure 4. Collector−Emitter Saturation Region
104 500
VCE = 250 V 300 TJ = 25°C
IC, COLLECTOR CURRENT (A)
103 200 Cib

μ
C, CAPACITANCE (pF)
TJ = 150°C
100
102 125°C
70
100°C 50
101 75°C 30
50°C 20
100
10 Cob
25°C
REVERSE FORWARD 7
10−1 5
−0.4 −0.2 0 +0.2 +0.4 +0.6 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000
VBE, BASE−EMITTER VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Collector Cutoff Region Figure 6. Capacitance
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3
MJE13003
Table 1. Test Conditions for Dynamic Performance
RESISTIVE
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING
SWITCHING
+5 V
VCC
33 +125 V
1N4933
MJE210
L
0.001 mF MR826*
RC
33 1N4933
TEST CIRCUITS
5V TUT
PW 2N222 IC Vclamp RB SCOPE
RB
1k 2
DUTY CYCLE ≤ 10% 68 *SELECTED FOR ≥ 1 kV
tr, tf ≤ 10 ns 1 IB 5.1 k D1
+5 Vk VCE
51
1N4933 1 T.U.T. −4.0
k 2N2905 V
0.02 mF 270 MJE200
NOTE 47
PW and VCC Adjusted for Desired IC 100
1/2 W
RB Adjusted for Desired IB1 − VBE(off)
VCC = 125 V
CIRCUIT
VALUES
Coil Data:
GAP for 30 mH/2 A VCC = 20 V RC = 125 W
Ferroxcube Core #6656
Lcoil = 50 mH Vclamp = 300 Vdc D1 = 1N5820 or Equiv.
Full Bobbin (~200 Turns) #20
RB = 47 W
OUTPUT WAVEFORMS
+10.3 V 25 ms
IC tf CLAMPED
TEST WAVEFORMS
t1 Adjusted to
IC(pk)
Obtain IC 0
t Lcoil (IC Test Equipment
t1 tf pk)
t1 ≈ Scope−Tektronics − 8.5 V
VCC
VCE 475 or Equivalent
VCEor Lcoil (IC tr, tf < 10 ns
pk)
Vclamp t2 ≈ Duty Cycle = 1.0%
t Vclamp
RB and RC adjusted
TIME t2
for desired IB and IC
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4
MJE13003
ÎÎÎ
ÎÎÎ
ÎÎÎ
ICPK Table 2. Typical Inductive Switching Performance
Vclamp
ÎÎÎÎÎÎÎÎÎÎ
IC
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
TC tsv trv tfi tti tc
ÎÎÎ ÎÎÎ
ÎÎÎ
90% Vclamp 90% IC AMP _C ms ms ms ms ms
ÎÎÎ
ÎÎÎ
ÎÎÎ
IC tsv trv tfi tti
0.5 25 1.3 0.23 0.30 0.35 0.30
ÎÎÎ
ÎÎÎ
ÎÎÎ
100 1.6 0.26 0.30 0.40 0.36
tc
ÎÎÎ
ÎÎÎ
ÎÎÎ
1 25 1.5 0.10 0.14 0.05 0.16
VCE 10% Vclamp 10% 100 1.7 0.13 0.26 0.06 0.29
ÎÎÎ
ÎÎÎ
ÎÎÎ
IB 90% IB1 ICPK 2% IC
1.5 25 1.8 0.07 0.10 0.05 0.16
ÎÎÎ
ÎÎÎ
ÎÎÎ
100 3 0.08 0.22 0.08 0.28
TIME
Figure 7. Inductive Switching Measurements

NOTE: All Data Recorded in the Inductive Switching Circuit in Table 1
SWITCHING TIMES NOTE
In resistive switching circuits, rise, fall, and storage times An enlarged portion of the inductive switching
have been defined and apply to both current and voltage waveforms is shown in Figure 7 to aid in the visual identity
waveforms since they are in phase. However, for inductive of these terms.
loads which are common to SWITCHMODE power For the designer, there is minimal switching loss during
supplies and hammer drivers, current and voltage storage time and the predominant switching power losses
waveforms are not in phase. Therefore, separate occur during the crossover interval and can be obtained
measurements must be made on each waveform to using the standard equation from AN−222:
determine the total switching time. For this reason, the PSWT = 1/2 VCCIC(tc)f
following new terms have been defined. In general, t rv + t fi ] t c. However, at lower test currents
tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp this relationship may not be valid.
trv = Voltage Rise Time, 10−90% Vclamp As is common with most switching transistors, resistive
switching is specified at 25_C and has become a benchmark
tfi = Current Fall Time, 90−10% IC
for designers. However, for designers of high frequency
tti = Current Tail, 10−2% IC converter circuits, the user oriented specifications which
tc = Crossover Time, 10% Vclamp to 10% IC make this a “SWITCHMODE” transistor are the inductive
switching speeds (tc and tsv) which are guaranteed at 100_C.
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5
MJE13003
RESISTIVE SWITCHING PERFORMANCE
2 10
7 ts VCC = 125 V
1 VCC = 125 V 5 IC/IB = 5
IC/IB = 5 TJ = 25°C
0.7 3
tr TJ = 25°C
0.5
2
t, TIME (s)
t, TIME (s)
0.3
μ
μ
0.2 1
td @ VBE(off) = 5 V 0.7
0.1 0.5
0.07 0.3 tf
0.05
0.2
0.03
0.02 0.1
0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 10 20 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 2
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 8. Turn−On Time Figure 9. Turn−Off Time
1
0.7
r(t), EFFECTIVE TRANSIENT THERMAL
D = 0.5
0.5
RESISTANCE (NORMALIZED)
0.3 0.2
0.2
0.1
P(pk)
0.1 0.05 ZqJC(t) = r(t) RqJC
0.07 RqJC = 3.12°C/W MAX
0.02 D CURVES APPLY FOR POWER
0.05
PULSE TRAIN SHOWN t1
0.03 READ TIME AT t1 t2
0.01
0.02 TJ(pk) − TC = P(pk) RqJC(t)
SINGLE PULSE DUTY CYCLE, D = t1/t2
0.01
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 50 100 200 500 1000
t, TIME OR PULSE WIDTH (ms)
Figure 10. Thermal Response
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MJE13003
The Safe Operating Area figures shown in Figures 11 and 12 are SAFE OPERATING AREA INFORMATION
specified ratings for these devices under the test conditions
shown. FORWARD BIAS
There are two limitations on the power handling ability of
10 a transistor: average junction temperature and second
5 breakdown. Safe operating area curves indicate IC − VCE
IC, COLLECTOR CURRENT (AMP)
2 10 ms limits of the transistor that must be observed for reliable

100 ms operation; i.e., the transistor must not be subjected to greater
1 5.0ms dissipation than the curves indicate.
0.5 dc 1.0 ms The data of Figure 11 is based on TC = 25_C; T J(pk) is
TC = 25°C
0.2
variable depending on power level. Second breakdown
THERMAL LIMIT (SINGLE PULSE) pulse limits are valid for duty cycles to 10% but must be
0.1 BONDING WIRE LIMIT derated when TC ≥ 25_C. Second breakdown limitations do
0.0 SECOND BREAKDOWN LIMIT
not derate the same as thermal limitations. Allowable
5 CURVES APPLY BELOW RATED VCEO
0.02
current at the voltages shown on Figure 11 may be found at
MJE13003 any case temperature by using the appropriate curve on
0.01
5 10 20 50 100 200 300 500 Figure 13.
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) T J(pk) may be calculated from the data in Figure 10. At
high case temperatures, thermal limitations will reduce the
Figure 11. Active Region Safe Operating power that can be handled to values less than the limitations
Area
imposed by second breakdown.
REVERSE BIAS
1.6
For inductive loads, high voltage and high current must be
IC, COLLECTOR CURRENT (AMP)
sustained simultaneously during turn−off, in most cases,

1.2
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
VBE(off) = 9 V at or below a specific value of collector current. This can be
TJ ≤ 100°C accomplished by several means such as active clamping, RC
0.8
IB1 = 1 A MJE13003 snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
0.4
and represents the voltage−current conditions during
5V reverse biased turn−off. This rating is verified under
3V clamped conditions so that the device is never subjected to
1.5 V an avalanche mode. Figure 12 gives RBSOA characteristics.
0
0 100 200 300 400 500 600 700 800
VCEV, COLLECTOR−EMITTER CLAMP VOLTAGE (VOLTS)
Figure 12. Reverse Bias Safe Operating Area
SECOND BREAKDOWN
0.8 DERATING
POWER DERATING FACTOR
0.6
THERMAL
DERATING
0.4
0.2
0
20 40 60 80 100 120 140 160
TC, CASE TEMPERATURE (°C)
Figure 13. Forward Bias Power Derating
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7
MJE13003
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE Z
NOTES:
−B− 1. DIMENSIONING AND TOLERANCING PER ANSI
U F C Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
Q 3. 077−01 THRU −08 OBSOLETE, NEW STANDARD
M 077−09.
−A−
INCHES MILLIMETERS
1 2 3 DIM MIN MAX MIN MAX
A 0.425 0.435 10.80 11.04
B 0.295 0.305 7.50 7.74
H C 0.095 0.105 2.42 2.66
K D 0.020 0.026 0.51 0.66
F 0.115 0.130 2.93 3.30
G 0.094 BSC 2.39 BSC
H 0.050 0.095 1.27 2.41
J 0.015 0.025 0.39 0.63
V J K 0.575 0.655 14.61 16.63
M 5_ TYP 5 _ TYP
G R Q 0.148 0.158 3.76 4.01
S 0.25 (0.010) M A M B M R 0.045 0.065 1.15 1.65
S 0.025 0.035 0.64 0.88
D 2 PL U 0.145 0.155 3.69 3.93
V 0.040 −−− 1.02 −−−
0.25 (0.010) M A M B M
STYLE 3:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: http://onsemi.com
Literature Distribution Center for ON Semiconductor USA/Canada
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Order Literature: http://www.onsemi.com/litorder
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 For additional information, please contact your
Email: orderlit@onsemi.com Phone: 81−3−5773−3850 local Sales Representative.
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MJE13003

SWITCHMODEt Series NPN

MJE13003G TO−225 500 Units/Box

© Semiconductor Components Industries, LLC, 2006 1 Publication Order Number:

DC Current Gain ÎÎÎÎÎ

VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 1. DC Current Gain Figure 2. Collector Saturation Region

VBE(sat) @ IC/IB = 3 0.3

25°C 0.15 25°C

Figure 3. Base−Emitter Voltage Figure 4. Collector−Emitter Saturation Region

103 200 Cib

Figure 5. Collector Cutoff Region Figure 6. Capacitance

Table 1. Test Conditions for Dynamic Performance

Figure 7. Inductive Switching Measurements

SWITCHING TIMES NOTE

RESISTIVE SWITCHING PERFORMANCE

Figure 8. Turn−On Time Figure 9. Turn−Off Time

Figure 10. Thermal Response

2 10 ms limits of the transistor that must be observed for reliable

sustained simultaneously during turn−off, in most cases,

Figure 12. Reverse Bias Safe Operating Area

Figure 13. Forward Bias Power Derating

SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.

PUBLICATION ORDERING INFORMATION

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