2SD1766 / 2SD1758 / 2SD1862

Transistors

Medium power transistor (32V, 2A)

2SD1766 / 2SD1758 / 2SD1862

!Features !External dimensions (Units : mm)

1) Low VCE(sat).
2SD1766 2SD1758
www.DataSheet4U.com VCE(sat) = 0.5V (Typ.)
4.5+0.2
2.3+0.2

0.5±0.1
−0.1
1.5 +
6.5±0.2 −0.1
(IC/IB = 2A / 0.2A)
0.2

1.5±0.3
1.6±0.1 −0.1 C0.5
5.1+0.2
−0.1 0.5±0.1

2) Complements the 2SB1188 /

2.5 +0.2
−0.1
4.0±0.3

−0.1
5.5+0.3

9.5±0.5
2SB1182 / 2SB1240

0.9

1.5
(1) (2) (3)

2.5
0.4 +0.1 0.75 0.65±0.1
−0.05
0.9
1.0±0.2

0.4±0.1 0.5±0.1 0.4±0.1 0.55±0.1

1.5±0.1 1.5±0.1 2.3±0.2 2.3±0.2 1.0±0.2
3.0±0.2

!Structure Abbreviated symbol : DB∗

(1) (2) (3)
Epitaxial planar type
ROHM : MPT3 (1) Base ROHM : CPT3 (1) Base
NPN silicon transistor EIAJ : SC-62 (2) Collector EIAJ : SC-63 (2) Collector
(3) Emitter (3) Emitter

2SD1862
6.8±0.2 2.5±0.2
4.4±0.2
0.9
1.0

0.65Max.
14.5±0.5

0.5±0.1

(1) (2) (3)

2.54 2.54
1.05 0.45±0.1

ROHM : ATV (1) Emitter

(2) Collector
(3) Base

∗ Denotes hFE

!Absolute maximum ratings (Ta=25°C)

Parameter Symbol Limits Unit
Collector-base voltage VCBO 40 V
Collector-emitter voltage VCEO 32 V
Emitter-base voltage VEBO 5 V
2 A (DC)
Collector current IC
2.5 A (Pulse) ∗1
0.5
2SD1766 W ∗2
Collector 2
power PC
dissipation 2SD1758 10 W (TC=25°C)
2SD1862 1 W ∗3
Junction temperature Tj 150 °C
Storage temperature Tstg −55~+150 °C
∗1 Single pulse, PW=20ms
∗2 When mounted on a 40×40×0.7 mm ceramic board.
∗3 Printed circuit board: 1.7 mm thick, collector copper plating 1 cm2 or lager.
 2SD1766 / 2SD1758 / 2SD1862
Transistors

!Electrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage BVCBO 40 − − V IC=50µA
Collector-emitter breakdown voltage BVCEO 32 − − V IC=1mA
Emitter-base breakdown voltage BVEBO 5 − − V IE=50µA
Collector cutoff current ICBO − − 1 µA VCB=20V
Emitter cutoff current IEBO − − 1 µA VEB=4V
2SD1766,2SD1758 82 − 390 ∗
DC current
hFE − VCE=3V, IC=0.5A
www.DataSheet4U.comtransfer ratio 2SD1862 120 − 390
Collector-emitter saturation voltage VCE(sat) − 0.5 0.8 V IC/IB=2A/0.2A ∗

− − ∗
Transition frequency fT 100 MHz VCE=5V, IE=−50mA, f=100MHz
Output capacitance Cob − 30 − pF VCB=10V, IE=0A, f=1MHz
∗ Measured using pulse current.

!Packaging specifications and hFE

Package Taping
Code T100 TL TV2
Basic ordering
Type hFE unit (pieces) 1000 2500 2500
2SD1766 PQR − −
2SD1758 PQR − −
2SD1862 QR − −

hFE values are classified as follows :

Item P Q R
hFE 82~180 120~270 180~390

!Electrical characteristic curves

0.5
2000 Ta=25°C Ta=25°C 2.7mA Ta=25°C
VCE=3V
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (mA)

1000 3.0mA 500

2.4mA
0.4
DC CURRENT GAIN : hFE

500 2.1mA
200 1.8mA
0.3 200
100 1.5mA
50 VCE=3V
1.2mA 1V
100
0.2
20 0.9mA
10
0.6mA 50
5 0.1
0.3mA
2
0 IB=0A
1 20
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0.4 0.8 1.2 1.6 2.0 5 10 20 50 100 200 500 1A 2A

BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (mA)

Fig.1 Grounded emitter propagation Fig.2 Grounded emitter output Fig.3 DC current gain vs. collector
characteristics characteristics current
 2SD1766 / 2SD1758 / 2SD1862
Transistors
2 1000
COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)

BASE SATURATION VOLTAGE : VBE(sat) (V)

Ta=25°C Ta=25°C Ta=25°C

TRANSITION FREQUENCY : fT (MHz)

VCE=5V
500 500
1

IC/IB=10
200 200
0.5

100 100
IC/IB=50 0.2
50 50
20
0.1

10 20
20
www.DataSheet4U.com 5 10 20 50 100 200 500 1A 2A 5 10 20 50 100 200 500 1A 2A −1 -2 −5 −10 −20 −50 −100−200 −500 −1A

COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA)

Fig.4 Collector-emitter saturation Fig.5 Collector-emitter saturation Fig.6 Transition frequency vs. emitter
voltage vs. collector current voltage vs. collector current current
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

1000 5 5
: Cib (pF)

Ta=25°C
f=1MHz

COLLECTOR CURRENT : IC (A)

2 2
COLLECTOR CURRENT : IC (A)

500 IE=0A
IC=0A
1 1
Cib PW=100ms∗
200
EMITTER INPUT CAPACITANCE

0.5 0.5
PW=10ms∗
100 0.2 100ms∗ 0.2
DC
Cob 0.1 0.1
50
0.05 Ta=25°C 0.05
TC=25°C
∗Single ∗Single
20
0.02 nonrepetitive 0.02 nonrepetitive
pulse pulse
10 0.01 0.01
0.5 1 2 5 10 20 0.1 0.2 0.5 1 2 5 10 20 50 0.1 0.2 0.5 1 2 5 10 20 50

COLLECTOR TO BASE VOLTAGE : VCB (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.7 Collector output capacitance vs. Fig.8 Safe operating area Fig.9 Safe operating area
collector-base voltage (2SD1766) (2SD1758)
Emitter input capacitance vs.
emitter-base voltage

3
2
PW

Ic Max
COLLECTOR CURRENT : IC (A)

=1
PW

Ic Max Pulse
0m
=1

1
s
0 0m

0.5
s
DC

0.2

0.1

0.05 Ta=25°C
Single
nonrepetitive
pulse
0.2 0.5 1 2 5 10 20 50

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.10 Safe operating area

(2SD1862)