8.192 WORD X 8 BIT CMOS STATIC RAM ESCRIPTION ‘The TOSS6SAPL ic a 65.956 bit static random access memory organized as 8.192 words by 8 bits using CMOS ve from 4 single SV supply. Advanced oireuit techniques provide both high speed and low power features with a maximum operating current of 5mA/MHz and maximum access time of 100ns/120ns/150ns When OR 1s a logical low or CEI is a logical high, the device is placed in low power standby mode in whien standby current is 2uA typically. The TCSSGSAPL has three control inputs. Two chip enables (CEI, CRA) allow for device selection and data retention control, and an output enable input (GE) provides fast memory access. Thus the TCSS6SAPL 1s suitable for use in various Iioroprocessor application systems where high speed, low power, and battery back up are required The TOSSEZAPL also features pin compatibility with the 64K bit EPROM (TMM2764D), RAM and EPROM are then interchangeable in the same socket, resulting in flexibility in the definition of the quantity of RAM versus EPROM in microprocessor application systems. The TOSS63APL is offered in 4 dual-in-line 28 pin standard 600 mil plastic package FEATURES] ” Low Power Dissipation + Directly TTL Compatible: ALL Inputs and 27.5aW/Miz (Max.) Operating . + Pin Compatible with 2764 type EPROM + Standby Current: 100uA(Ilax.) Ta=70°C eons OuA(itax.) Ta ‘TCSS6SAPL Family (Package type) ‘TCSS63APL-10: 100ns(Max.) Package Type [Device Nane] ‘TCSS63APL~12: 120ns(Max.) 600 mil DIP RTCSSO5APL ee eee 300 mil DIP (Slim Package)| TC5563APL + SV Single Power Supply F i + Power Down Features: CE2, CEL Fist Package (SOP) ao + Fully Static Operation + See TCSS6SAPL/AFL Technical Data. + Data Retention Supply Voltage: 2.05.5 (Pia COMMECTION (BLOCK DIAGRAM PIN CONNECTION) (ror VIEW), «oy TCS S6SAPL maiz7 64D cLock ‘PRECHAROE : oan: ciacuin uodi Vap¥o> verdr Woe ‘idde fine alede | Bbpow oe a pp ‘ards spoea ards 2apN.c, 48 2 lle — nat Gee ei Be so teH | || smere cm | —-oxp neds 5bAR faqs pan 48 BREE! ARRAY do eb oe Abd Zapoe 29 RHE] ace case ido aba ade bee a Bais 2 fads elle Roto hives = satin Tabor an aaa (ossse) voids isp i7or Sota bos ane Yoage pice Side infos os$3 igpros + ‘Supe isp 1706 onde _ 3808 ae censz a (PIN NAMES l CoLTua DECODER 08 ‘AO \ Al2 [Address Inputs Wa Read/Write Control Input [se | etpot testis Tague ae aeawats CEI, CE2 | Chip Enable Inputs T/Ol~ 1/08] Data Input/Output DD Power (+5V) GND Ground N.C | No Connection gee = < cer BATC5563APL-10, TC5563APL—12 TC5563APL-15 OPERATION MODE ‘OPEPATION MODE cer cE2 oF R/a | I/o1~1/08 | POWER Read L ¥ L H Dour Tpp0 Write L u * L Din Topo Output Deselect L u @ H High-Z Ippo # * * * High-Z Tpps Standby a a ; . pe — *: Hor MAXIMUM RATINGS SieBoL TEM RATING UNIT bb Power Supply Voltage 70.307.0 v VIN Tuput Voltage -0.3— 7.0 v Vi/0 Tnput and Output Voltage =0.5 0, Vppt0.5 v PD Power Dissipation 0.8 Ww Tsolder | Soldering Temperature 260+ 10 °C sec Tees Storage Temperature 55150 *c Topr Operating Temperature 0~70 °C *; -3,0V at pulse width 50ns Max. D.C. RECOMMENDED OPERATING CONDITIONS SYMBOL PARAMETER MIN. me. | max. [| uniT VDD Power Supply Voltage 45 3.0 3.5 Viet Input High Voltage 2.2 - Vppt0.3 YL Input Low Voltage 0.3" = 0.8 : You Data Retention Supply Voltage 2.0 = 3.5 OV at pulse width 50ns Max. B2TC5563APL-10, TC5S563APL—12 D.C, and OPERATING CHARACTERISTICS (Ta=0~ 70°C, Vpp=5V#10z) SYMBOL PARAMETER TEST CONDITION MIN. UNIT Ti. [input Leakage Current |Vzy-0~ Vp - vA Ton |Output High Current | Voyj=2.4V. -1.0] - - mA ToL [output Low Current Vou=0.4V 4.0] - = mA @i-Vyq or CED=Vyy oF tro output Leakage Current [R/weVy, or OE*Vzy - | - |21.0) ua Vours0~ Yop Teyelent-Ous Sai on ean Teyeld tessezapL-20]-c7stq | - | 45 | ma 1 C ee Other tnput= Iresséaart-12| "eet - | - | go | ma Vin/Vin, teyetd _ | _ loyr=Ona jrcsse3api-15| cycle 35 | ma loperating Current Vop=5.5V Teyele=1.0us - [- 3 | ma |CEL=0.2V ae Tc55634PL-10] evel | 1 ICE2=Vpp-0.2V =100n5| iL DD02 . tcye: lother input= |noss63apL-12 feyetg ele 35 | ma Vyp-0.2¥/0.2¥ resse3ari-15| “<4 - | - | 30 | ma 7 _ aa =150ng Ippsi_|Standby Current Vi or CE2*ViL = f= 3 | ma . ICEL=Vpp-0.2V [Vppes-5v | 2 | 100 Ipps2 |Standby Current gy a vA lor CE2#0.2v Vpp=3-0v | = 1 | 50 %: In standby mode with CE12 Vpp-0.2V, these specification limits are guaranteed under the condition of CE2% Vpp-0.2V or CE2$0.2V. CAPACITANCE (Ta=25%C) SYMBOL PARAMETER TEST CONDITION max, | UNIT Cin | Input Capacitance ViN=GND 10 : Cour | Output Capacitance Vour=GNb 10 ® Note: This parameter is periodically sampled and is not 100% tested.