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Irl530ns PDF
Irl530ns PDF
Irl530ns PDF
IRL530NS/L
HEXFET® Power MOSFET
l Advanced Process Technology D
l Surface Mount (IRL530NS) VDSS =100V
l Low-profile through-hole (IRL530NL)
l 175°C Operating Temperature RDS(on) = 0.10Ω
l Fast Switching G11
l Fully Avalanche Rated ID = 17A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
D 2 P ak T O -26 2
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRL530NL) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
17
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
12 A
IDM Pulsed Drain Current
60
PD @TA = 25°C Power Dissipation 3.8 W
PD @TC = 25°C Power Dissipation 79 W
Linear Derating Factor 0.53 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy
150 mJ
IAR Avalanche Current 9.0 A
EAR Repetitive Avalanche Energy 7.9 mJ
dv/dt Peak Diode Recovery dv/dt
5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.9
°C/W
RθJA Junction-to-Ambient ( PCB Mounted,steady-state)** ––– 40
1/09/04
IRL530NS/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ.Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.122––– V/°C Reference to 25°C, ID = 1mA
––– –––0.100 VGS = 10V, ID = 9.0A
RDS(on) Static Drain-to-Source On-Resistance ––– –––0.120 Ω VGS = 5.0V, ID = 9.0A
––– –––0.150 VGS = 4.0V, ID = 8.0A
VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 7.7 ––– ––– S VDS = 50V, ID = 9.0A
––– ––– 25 VDS = 100V, VGS = 0V
IDSS Drain-to-Source Leakage Current A
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 16V
IGSS nA
Gate-to-Source Reverse Leakage ––– –––-100 VGS = -16V
Qg Total Gate Charge ––– ––– 34 ID = 9.0A
Qgs Gate-to-Source Charge ––– ––– 4.8 nC VDS = 80V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 20 VGS = 5.0V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 7.2 ––– VDD = 50V
tr Rise Time ––– 53 ––– ns ID = 9.0A
td(off) Turn-Off Delay Time ––– 30 ––– RG = 6.0Ω, VGS = 5.0V
tf Fall Time ––– 26 ––– RD = 5.5Ω, See Fig. 10
Between lead,
LS Internal Source Inductance ––– 7.5 –––
nH and center of die contact
Ciss Input Capacitance ––– 800 ––– VGS = 0V
Coss Output Capacitance ––– 160 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 90 ––– ƒ = 1.0MHz, See Fig. 5
––– ––– 60
(Body Diode)
p-n junction diode. S
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 9.0A, VGS = 0V
trr Reverse Recovery Time ––– 140 210 ns TJ = 25°C, IF = 9.0A
Qrr Reverse Recovery Charge ––– 740 1100 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 3.7mH
Uses IRL530N data and test conditions
RG = 25Ω, IAS = 9.0A. (See Figure 12)
ISD ≤ 9.0A, di/dt ≤ 540A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended soldering techniques refer to application note #AN-994.
IRL530NS/L
100 VGS
100 VGS
TOP 15V TOP 15V
12V 12V
10V 10V
8.0V 8.0V
ID , Drain-to-Source Current (A )
ID , Drain-to-Source Current (A )
6.0V 6.0V
4.0V 4.0V
3.0V 3.0V
BOTTOM 2.5V BOTTOM 2.5V
10 10
2.5 V
1 1
2 .5V
2 0µ s P U LS E W ID TH 2 0µ s P U LS E W ID TH
T J = 2 5°C T J = 1 75 °C
0.1 A 0.1 A
0.1 1 10 100 0.1 1 10 100
V D S , D rain-to-S ource V oltage (V ) V D S , D rain-to-S ource V oltage (V )
100 3.0
I D = 15 A
R D S (on) , D ra in-to -S o urc e O n R e s is ta nc e
T J = 2 5 °C
I D , D ra in -to-S ourc e C urrent (A)
2.5
T J = 1 7 5°C
10 2.0
(N o rm alize d)
1.5
1 1.0
0.5
V DS = 5 0V
2 0µ s P U L S E W ID TH V G S = 1 0V
0.1 0.0 A
A -60 -40 -20 0 20 40 60 80 100 120 140 160 180
2 3 4 5 6 7 8 9 10
1400 15
V GS = 0V , f = 1MHz I D = 9.0 A
C iss = C g s + C g d , C d s S H O R TE D V D S = 8 0V
1000
9
800
600
6
C oss
400
C rss 3
200
FO R TE S T C IR C U IT
S E E FIG U R E 1 3
0 A 0 A
1 10 100 0 10 20 30 40 50
V D S , D rain-to-S ourc e V oltage (V ) Q G , T otal G ate C harge (nC )
100 1000
O P E R A T IO N IN T H IS A R E A LIM IT E D
B Y R D S (o n )
I S D , R everse Drain C urrent (A )
I D , D rain Current (A )
T J = 17 5°C
100
10µ s
10
T J = 2 5°C
10 10 0µs
T C = 25 °C 1m s
T J = 17 5°C
V G S = 0V S ing le P u lse 10m s
1 A 1 A
0.4 0.6 0.8 1.0 1.2 1.4 1 10 100 1000
V S D , S ourc e-to-D rain V oltage (V ) V D S , D rain-to-S ource V oltage (V )
20 RD
VDS
VGS
D.U.T.
15 RG
I D , Drain Current (A)
+
- VDD
5.0V
10 Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
VDS
90%
0
25 50 75 100 125 150 175
TC , Case Temperature ( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs. td(on) tr t d(off) tf
Case Temperature
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
1 D = 0.50
0.20
0.10
0.05 P DM
0.1 0.02 SINGLE PULSE t1
0.01 (THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
50
V D D = 25 V
0 A
V(BR)DSS 25 50 75 100 125 150 175
VDD
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
VDS
IAS
50KΩ
12V .2µF
QG .3µF
5.0 V +
V
D.U.T. - DS
QGS QGD
VGS
VG
3mA
IG ID
Charge Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
IRL530NS/L
+
- +
-
RG • dv/dt controlled by RG +
• Driver same type as D.U.T. VDD
-
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VGS=10V *
Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent
Ripple ≤ 5% ISD
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IRL530NS/L
1.60 (.063)
1.50 (.059)
1.60 (.063)
4.10 (.161) 1.50 (.059)
3.90 (.153) 0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
30.40 (1.197)
NOTES : MAX.
1. COMFORMS TO EIA-418. 26.40 (1.039) 4
2. CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)
3. DIMENSION MEASURED @ HUB.
3
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 01/04
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/