Problem Set#1

Semiconductor devices1-Fall2010-IAU Fasa

1-In silicon, the lattice constant is 5.43Å. Assume a hard-sphere model,(a)Calculate

atoms
the radius of a silicon atom. (b) Determine the density of silicon atoms in . (c)
cm 3
Use the Avogadro constant to find the density of silicon.
2-A silicon wafer 1mm thick having a diameter of 200mm contains 5.41 mg of boron
uniformly distributed in substitutional sites. Find (a) the boron concentration in
atoms
and (b) the average distance between boron atoms.
cm 3
3-A Czochralski-grown crystal is doped with boron. Why is the boron concentration
larger at the tail end of the crystal than at the seed end?
4-Why is the impurity concentration larger in the center of the wafer than at its
perimeter?
E
5-The equilibrium density of cavity n1 is given by N exp( − 1 ) , where N is the
kT
density of semiconductor atoms and E1 is the energy of formation. Calculate n1 in
silicon at 27°C, 900°C, and 1200°C. Assume E1 = 2.3eV .
6-How many chips of area 400 mm 2 can be placed on a wafer 300mm in diameter?
Explain your assumptions regarding the chip shape and unused wafer perimeter.

7-Calculate the junction depth and the total amount of dopant introduced after boron
predeposition performed at 950°C for 30 minutes in a neutral ambient. Assume the
substrate is n-type silicon with N D = 1.8 ×10 16 cm −3 and the boron surface
−3
concentration is N 0 = 1.8 ×10 cm .
20

8-If the sample in Problem7 is subjected to a neutral drive-in at 1050°C for 60

minutes, calculate the diffusion profile and the junction depth.
9-Assume the measured phosphorus profile can be represented by a Gaussian function
cm 2
with a diffusivity D = 2.3 ×10 −13 . The measured surface concentration is
s
atoms
1 ×10 18 , and the measured junction depth is 1µm at a substrate concentration
cm 3
of 1×10 15 . Calculate the diffusion time and the total dopant in the diffused layer.

15 atoms
10-If arsenic is diffused into a thick slice of silicon doped with 10 boron at a
cm 3
temperature of 1100°C for 3 hours, what is the final distribution of arsenic if the
15 atoms
surface concentration is held fixed at 4 ×10 ? What are the diffusion length
cm 3
and junction depth?

11-Explain the meaning of intrinsic diffusion and extrinsic diffusion.