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    C82B Transistors: N-Channel JFET

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    Wendi Mustafa
    This document provides specifications for an N-channel JFET transistor intended for military and high reliability applications. It lists maximum ratings for drain-source breakdown voltage, gate-source breakdown voltage, drain current, gate current, power dissipation, operating temperature, and other electrical characteristics under specified test conditions.

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    C82B Transistors: N-Channel JFET

    Uploaded by

    Wendi Mustafa
    16 views1 page
    This document provides specifications for an N-channel JFET transistor intended for military and high reliability applications. It lists maximum ratings for drain-source breakdown voltage, gate-source breakdown voltage, drain current, gate current, power dissipation, operating temperature, and other electrical characteristics under specified test conditions.

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    Original Title

    AMMIS149882-1

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    This document provides specifications for an N-channel JFET transistor intended for military and high reliability applications. It lists maximum ratings for drain-source breakdown voltage, gate-source breakdown voltage, drain current, gate current, power dissipation, operating temperature, and other electrical characteristics under specified test conditions.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
    Download as pdf or txt
    16 views1 page

    C82B Transistors: N-Channel JFET

    Uploaded by

    Wendi Mustafa
    This document provides specifications for an N-channel JFET transistor intended for military and high reliability applications. It lists maximum ratings for drain-source breakdown voltage, gate-source breakdown voltage, drain current, gate current, power dissipation, operating temperature, and other electrical characteristics under specified test conditions.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    C82B Transistors

    N-Channel JFET

    Military/High-RelN

    V(BR)DSS (V)

    V(BR)GSS (V)

    I(D) Max. (A)10m

    I(G) Max. (A)

    Absolute Max. Power Diss. (W)200m

    Maximum Operating Temp (øC)150õ

    I(GSS) Max. (A)

    @V(GS) (V) (Test Condition)

    V(GS)off Min. (V)

    I(DSS) Max. (A)

    V(GS)off Max. (V)10

    @Vgs (test) (V)

    @V(DS) (V) (Test Condition)

    @I(D) (A) (Test Condition)

    I(DSS) Min. (A)

    I(DSS) Max. (A)

    @V(DS) (V) (Test Condition)

    r(DS)on Max. (Ohms)

    g(fs) Min. (S) Trans. conduct..03m

    g(fs) Max; (S) Trans. conduct;.20m

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