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A-Si TFT LCD
A-Si TFT LCD
A-Si TFT LCD
• The similarity
: cleaning, deposition of thin films, photolitho., and wet & dry etching of the thin films
1. c-Si MOS vs a-Si TFT
• The difference
1) a-Si TFT on glass vs c-Si MOS on Si wafers
2) the process temp : a-Si TFT (250 ~350) vs c-Si MOS (~1,000℃)
• Critical issues in the processing of TFT arrays
:low-resistance gate-line, uniform & fine etching, and lithographic accuracy
to achieve high precision, large aperture ratio, low power,and large screen
It is required to minimize the number of array processes by reducing the
number of photo masks and simplify thin-film-formation & etching process
2. Fabrication process of a-Si TFT
2. Fabrication process of a-Si TFT
3. Fabrication process of C/F
• Color filters (CFs) can be made with either dyes or pigments, utilizing coloring
method such as dyeing, diffusion, electro-deposition, and printing
3. Fabrication process of C/F
3. Fabrication process of C/F
• The TFT-array and color-filter are made into an LCD panel by assembling the
two substrates together with a sealant, while the cell gap is maintained by spacers.
4. LC cell process
• After forming alignment layers on the lower panel of TFT and the upper panel of C/F,
scatter the spacers and print the seals to put together.
• After putting them together, inject liquid crystal into the inside using the capillary pheno-
menon and seal the inlet to finish the LCD process
5. Assembling LCD Modules
• When the polarizing plates are attached to the finished panel, the driver-IC is mounted
to it, PCB (Printed Circuit Board) is assembled and finally the backlight units and the
enclosure are assembled, the module is completed.
6. a-Si TFT structures
* Coplanar- type TFT : source/data and gate are formed in the same layer.
( most poly silicon)
* Stagged-ty[e TFT : source/drain and gate are formed at different layers
( most armorphous silicon)
: inverted staggered (bottom gate)/ Normal staggered (top gate)
7. a-Si TFT Design
The operational characteristics of a TFT are determined by the sizes of its electrodes,
the W/L ratio, and the overlap between the gate electrode and the source-drain
7. a-Si TFT Design
• Because a-Si has photoelectric characteristics, the a-Si TFT must be shielded from
incident light .
• The a-Si layer must also be as thin as possible to minimize the generation of
photo-induced current, which can cause the TFT to malfunction.
7. a-Si TFT Design
• In the top-gate structure, a light-shield layer must first be formed at the region of
the TFT channel.(The formation of this light shield may cause an extra process step)
• In bottom-gate TFTs, a gate electrode is first formed at the TFT channel region,
where it also serves as a light-shield layer.
7. a-Si TFT Design
Aperture Ratio
• The aperture ratio is given by the area of the pixel aperture divided by the total
pixel area (aperture area plus the area of the opaque elements).
: In the unit cell, TFT electrodes, storage-capacitor electrodes, signal bus-lines,
and the black-matrix material constitute opaque areas.
• To increase the aperture ratio as much as possible, the size of the opaque elements
must be made as small as possible, while maintaining a design that maximizes the
size of the pixel-electrode area
7. a-Si TFT Design
Aperture Ratio