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Btech Ee 3 Sem Analog Devices and Circuits A1130 2 Dec 2018
Btech Ee 3 Sem Analog Devices and Circuits A1130 2 Dec 2018
Btech Ee 3 Sem Analog Devices and Circuits A1130 2 Dec 2018
com
SECTION-A
1. Write briefly :
j. A uniform piece of n-type of silicon that is 1m long senses a voltage of 1V.
Determine the velocity of the electrons.
SECTION-B
2. Draw the circuit diagram of full waver bride rectifier and compute Idc, Irms, Ripple factor,
Efficiency of rectification, and PIV of a diode.
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RL 1 k
IC 3V
Vout
750 mV Q1
SECTION-C
7. Design the circuit of Fig. 2 so as to provide a transconductance of (1/52) for Q1. Assume
Vcc = 2.5 V, = 100, and Is = 5 × l0 -17 A. What is the maximum tolerable value of Rc?
VCC
R1 RC Small Enough to
Avoid Saturation
Y
I1 IC
X Q1
I1 >> IB
IB
R2
RE +
VRE > > Variation in VX and VBE
–
Fig. 2 Circuit diagram
8. Derive the expression of voltage gain, current gain, input impedance, and output
impedance in a common collector amplifier using h-parameters.
9. Calculate the bias current of M1 in Fig. 3. Assume nCox = 100 A/V2 and VTH = 0.4 V.
If the gate voltage increases by 10 mV, what is the change in the drain voltage?
VDD = 1.8 V
RD 5 k
ID
X
M1 W 2
=
L 0.18
1V
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