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Basic Theory BJT
Basic Theory BJT
Basic Theory BJT
Suppose that the BJT is biased with a temperature-dependent current IC (T) which is
described as follows
✓ ◆m
T
IC (T ) = IC0 . (A.1)
T0
the current. To develop the equation for VEB (T), the current at specified reference
✓ ◆m
Tr
IC (Tr ) = IC0 . (A.2)
T0
The well-known equation of IC is used in this analysis, where the collector current is
q(VBE Vg0 )
IC = CT h exp , (A.3)
kT
where, Vg0 , C and h are the bandgap voltage at 0K, a constant, and a constant which is
By substituting Equation A.3 into Equations A.1 and A.2 the new equations are
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obtained as,
✓ ◆m
T q(V BE(T ) Vg0 )
IC0 = CT h exp , (A.4)
T0 kT
and
✓ ◆m
Tr q(V BE(Tr ) Vg0 )
IC0 = CTrh exp . (A.5)
T0 kTr
To obtain the temperature dependence of base-emitter voltage VBE (T), Equation A.4
( TTr )m q(VBE (T ) Vg0 ) q(VBE (Tr ) Vg0 )
= exp . (A.6)
( TTr )h kT kTr
✓ ◆m h
T q(VBE (T ) Vg0 ) q(VBE (Tr ) Vg0 )
ln = . (A.7)
Tr kT kTr
✓ ◆ ✓ ◆
T T kT T
VBE (T ) = Vg0 1 + VBE (Tr ) (h m) ln . (A.8)
Tr Tr q Tr
In circuit design, it is convenient to express VEB (T) in Equation A.8 as the sum of a
constant term, a term proportional to T , and a higher order term. Thus the Equation
✓ ◆
kTr k T
VBE (T ) = Vg0 + (h m) l T + (h
|{z} m) T Tr T ln , (A.9)
q q Tr
| {z } linear | {z }
constant high order
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where,
Vg0 + (h m) kTqr VBE (Tr )
l= . (A.10)
Tr
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