3240
16, 2017
Compact Quad-Band Polarization-Insensitive
Ultrathin Metamaterial Absorber With Wide
Angle Stability
Abhishek Sarkhel, Member, IEEE, and Sekhar Ranjan Bhadra Chaudhuri, Senior Member, IEEE
Abstract—In this letter, a compact ultrathin quad-band
polarization-insensitive metamaterial absorber with a wide angle
of absorption is proposed. The unit cell of the proposed struc-
ture comprises conductive cross dipoles loaded with split-ring
resonators. The proposed absorber exhibits simulated peak ab-
sorption of 96.15%, 99.17%, 99.75%, and 98.75% at 3.68, 8.58,
10.17, and 14.93 GHz, respectively. The proposed multiband ab-
sorber is ultrathin and compact in configuration with a thickness
of 0.0122 λ and a unit cell size of 0.122 λ (corresponding to the
lowest frequency). Moreover, by understanding the interaction of
the unit cell with incident electromagnetic radiation, a conceptual
equivalent circuit model is developed, which is used to understand
the influence of coupling on the quad band of absorption. The
simulated response of the proposed design demonstrates that it
has quad-band polarization-insensitive absorption characteristics.
In addition, the proposed absorber shows high absorption for an
oblique incidence angle up to 60◦ for both transverse-electric and
transverse-magnetic polarizations.
Index Terms—Compact, metamaterials, microwave absorber,
polarization-insensitive, quad-band, ultrathin, wide angle.
I. INTRODUCTION
HE exotic response of metamaterials in subwavelength
T scale has been extensively studied over various electro-
magnetic spectrums due to its novel properties of negative-index
of refraction, cloaking, perfect absorption, etc. [1]. Researchers
are taking a considerable interest on metamaterials as absorbers
due to its compact and ultrathin characteristics. It is important
to note that a metamaterial as a multiband absorber has various
potential applications such as radar cross-section reduction,
electromagnetic interference/electromagnetic compatibility,
and radio frequency identification. In the recent past, a few
metamaterial absorbers with triple band of absorption have
been reported [2]–[4]. Bhattacharyya et al. [2] presented a
triple-band polarization-insensitive metamaterial absorber con-
sisting of various scaled square loops. However, the orthogonal
Manuscript received August 14, 2017; accepted October 10, 2017. Date of
publication November 2, 2017; date of current version December 14, 2017.
(Corresponding author: Abhishek Sarkhel.)
A. Sarkhel is with the Department of Electronics and Communication, Na-
tional Institute of Technology Meghalaya, Shillong 793003, India (e-mail:
abhisheksarkhel@gmail.com).
S. R. Bhadra Chaudhuri is with the Department of Electronics and Telecom-
munication Engineering, Indian Institute of Engineering Science and Technol-
ogy, Howrah 700001, India (e-mail: prof.srbc@gmail.com).
Color versions of one or more of the figures in this letter are available online
at http://ieeexplore.ieee.org.
Digital Object Identifier 10.1109/LAWP.2017.2768077
1536-1225 © 2017 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission.
See http://www.ieee.org/publications standards/publications/rights/index.html for more information.
IEEE ANTENNAS AND WIRELESS PROPAGATION LETTERS, VOL.
arrangement of scaled square loops compromises the compact-
ness of the structure. The absorber structure in [3] has a need
of enough space among resonators to enhance the strength of
resonance, which also compromises compactness. In another
approach, fractal methodology was employed to realize a
multiple band of absorption with polarization-insensitive wide
angle characteristics [4]. However, the unit cell in [4] based
on circular fractal structure appears to be large in size. In this
context, it is essential to note that there are some applications
requiring absorbers having small electrical footprint with
ultrathin feature [5].
In the literature [6]–[8], triple-band polarization-insensitive
metamaterial absorbers with ultrathin feature were also stud-
ied. It might be noted that although these absorbers have
polarization-insensitive ultrathin characteristics, they are con-
fined to only triple band of absorption. A scaled stacked-layers
approach for realization of multiband absorption has also been
reported [9]. In spite of triple/quad band of absorption, the tech-
nique described in [9] increases the overall thickness of the
absorber, which is not desired due to ultrathin requirement for
practical applications. Despite advanced requirement of practi-
cal applications, very few metamaterial absorbers with compact
ultrathin quad and higher band of absorption characteristics
have been reported [10]–[12]. It is important to note that the
compactness of such absorbers can be further improved by still
preserving its ultrathin characteristic, as a result of which design
of a compact ultrathin quad or higher band of absorber with a
polarization-insensitive and wide-angle characteristic requires
further attention.
In this letter, a quad-band absorber with an electrically
compact ultrathin characteristic has been proposed. It exhibits
polarization-insensitive wide angle of absorptions in S-, X-,
and Ku-bands. The proposed absorber with a unit cell size of
0.122 λ is the most compact structure when compared with
the existing triple and higher band of absorbers presented in
[6]–[8] and [10]–[12]. Moreover, the proposed design also has
a relatively small thickness of 0.0122 λ. The mechanism of
absorption at multiple frequency bands is analyzed by using
a conceptual equivalent circuit model. The circuit model has
been developed by understanding the interaction of electro-
magnetic field with engineered structure of the absorber. The
combined effect of conductive cross dipoles loaded with split-
ring resonators (SRRs) results in quad band of absorption for
both transverse-electric (TE) and transverse-magnetic (TM) po-
larization. Lastly, the metamaterial absorber has been fabri-
cated and measured using free-space method, thus providing
a promising approach for compact ultrathin quad-band absorber
design.
SARKHEL AND BHADRA CHAUDHURI: COMPACT QUAD-BAND POLARIZATION-INSENSITIVE ULTRATHIN METAMATERIAL ABSORBER
Fig. 1. Unit cell geometry and design parameters. (a) Front view of the
proposed quad-band absorber unit cell a x = a y = 10, a = 0.2, b = 0.2, c =
3.6, d = 2, e = 0.2, f = g = 9.8 (unit: mm). (b) Structure A (conductive cross
dipoles). (c) Structure B (conductive cross dipoles loaded with SRR). (d) Struc-
ture C (conductive cross dipoles rotated by 45◦ ).
II. DESIGN AND ANALYSIS OF THE ABSORBER
Fig. 1(a) shows the front view of the unit cell geometry
of the proposed absorber. The unit cell of the quad-band
absorber is composed of a metallic pattern imprinted at the top
of a commercially available 1 mm thick grounded dielectric
substrate FR-4 (εr = 4.2, tan δ = 0.02). The top metallic
pattern of the proposed absorber is constructed by combining
conductive cross dipoles [shown as Structure A in Fig. 1(b)]
terminated by SRR at its edges [shown as Structure B in
Fig. 1(c)], and conductive cross dipoles rotated by 45◦ [shown
as Structure C in Fig. 1(d)]. The bottom layer of the substrate is
a continuous metal plane. The top metallic pattern and bottom
ground plane are made of copper of thickness 0.017 mm and
conductivity σ = 5.8 × 107 . The proposed unit cell is simu-
lated in commercially available electromagnetic solver ANSYS
HFSS with suitable periodic boundary condition [13]. In the
case of a ground-plane-based metamaterial absorber to increase
absorption, the reflectivity should be as small as possible. The
reflectivity is minimized when effective permittivity ε(ω) and
effective permeability  μ(ω) are equal. Thus, the normalized
impedance Z(ω) = μ(ω)/ε(ω) should be perfectly matched
to free space, and consequently absorption increases.
To illustrate, the design procedure simulations of Structures
A, B, and C have been performed separately, as shown in
Fig. 2(a). It is observed that Structure A has a single band of ab-
sorption at 4.92 GHz with a peak absorbance of 99.44%, whereas
the same structure when terminated by SRR (Structure B) re-
sults in triple band of absorption at 3.85, 10.01, 14.20 GHz with
peak absorption of 88.23%, 92.07%, 75.66%, respectively. The
absorption at 3.85 GHz is purely due to Structure A, whereas the
other two absorptions at 10.01, 14.20 GHz are due to the pres-
ence of SRR. Structure C also has a single band of absorption at
8.59 GHz with a peak absorbance of 95.97%. When Structures
B and C are combined, it results in the proposed absorber with
quad band of absorption at 3.68, 8.58, 10.17, and 14.93 GHz
with peak absorption of 96.15%, 99.17%, 99.75%, and 98.75%,
3241
Fig. 2. Simulated absorption response for (a) Structure A, Structure B, Struc-
ture C. (b) Proposed quad-band absorber.
Fig. 3. Simulated current distribution at top surface of the engineered structure
at peak absorption frequencies of (a) 3.68, (b) 8.58, (c) 10.17, and (d) 14.93 GHz.
Fig. 4. Simulated electric field distribution at top surface of the engineered
structure at peak absorption frequencies of (a) 3.68, (b) 8.58, (c) 10.17, and (d)
14.93 GHz.
respectively. Fig. 2(b) shows the quad-band absorption of the
proposed absorber. In order to get insight into the absorption
mechanism, surface current distributions representing the mag-
netic energy concentration for all the peak absorption frequen-
cies are shown in Fig. 3. It is observed that the absorption at
3.68 GHz (i.e., band 1) is mainly associated with excitation of
Structure A, whereas at 8.58 GHz (i.e., band 2), the absorption is
predominantly due to Structure C. It is important to note that in
the proposed quad-band absorber, the mutual coupling between
Structures B and C results in the enhancement of absorption at
all four frequency bands i.e., 3.68, 8.58, 10.17, and 14.93 GHz.
At band 3, i.e., at 10.17 GHz, the absorption is largely due to
the presence of SRR, i.e., Structure B, whereas the absorption
at 14.61 GHz is due to the mutual coupling between Structures
B and C as observed from the current distribution. This mutual
coupling effect results in enhancement of absorption at both the
higher frequency bands. The simulated electric field distribu-
tions at peak absorption frequencies have been shown in Fig. 4.
In order to understand the influence of coupling on individual
band of absorption, a conceptual equivalent circuit model is also
developed. The effect of mutual coupling on absorption has been
further explained through a circuit-level analysis. Moreover,
alongside the topology of the circuit model, circuit parameters
are also extracted by using Keysight Advanced Design System.
In a multiband absorber scenario, multiple electric and mag-
netic resonances associated with the engineered structure have
a significant influence on strength of absorbance on individual
3242
Fig. 5. Equivalent circuit models of the proposed absorber at their respec-
tive quad band of absorption frequencies of (a) 3.68, (b) 8.58, (c) 10.17, and
(d) 14.93 GHz.
frequency band. It is important to note that these resonances at
individual band of absorption can be modeled as an LC reso-
nant circuit in parallel with a transmission line section, which
is terminated to a short circuit. The equivalent circuit model
of the proposed absorber shown in Fig. 5 is developed by ana-
lyzing the interaction of the incident electromagnetic radiation
with the absorber structure. In circuit model analysis, the par-
asitic resonances and higher order resonances are assumed to
be negligible [10]. The presence of ground plane in the engi-
neered structure results in a single port analysis of the circuit
model. The interaction of incident electromagnetic wave with
the artificially engineered structure results in a current on top
of the metallic pattern that results in an inductive effect. The
IEEE ANTENNAS AND WIRELESS PROPAGATION LETTERS, VOL. 16, 2017
capacitive effect arises due to presence of dielectric substrate
between the top metallic pattern and bottom ground plane. The
resistive component of equivalent circuit represents the effect
of dielectric and conductor losses.
The surface current distribution at the lowest frequency
band centered on 3.68 GHz is shown in Fig. 3(a). It is seen
that the surface current is dominantly present on the vertical
strip of Structure A, as a result of which the absorption at
3.68 GHz is influenced by inductive effect introduced by the
vertical strip. The inductive effect is modeled as i1A Ld in
the circuit model shown in Fig. 5(a). Moreover, the electric
field distribution at lowest absorption frequency shown in
Fig. 4(a) shows a large amount of accumulation of charges
at the edges of Structure C along with top and bottom SRRs
of Structure B. Such accumulations of charges introduce a
dominant capacitive loading effect. The loading effect of
individual SRR is modeled as an LC tank circuit, whereas
Structure C is modeled as a series combination of inductive
and capacitive element having an inductance of j1C Ld and
capacitance CC 1 , as shown in Fig. 5(a). It is important to note
that inductive loading offered by Structure C along with top
and bottom SRRs is not significant. The corresponding circuit
parameters are i1A Ld = 0.24 nH, CB S 1 = 0.98 pF, K1B Ls =
0.65 nH, j1C Ld = 1.04 nH, CC 1 = 1 pF, and R = 1.5 Ω. The
second absorption at 8.58 GHz is influenced by the inductive
effect of Structure C. The inductive effect arises due to the
presence of surface current, as seen from Fig. 3(b). It is also
seen that the presence of top and bottom SRRs as well as the
left and right SRRs also results in an inductive effect. The
accumulation of charges at the edges of Structure C and SRRs
results in the capacitive effect. The SRRs are modeled as four
LC resonator tank circuits, whereas the inductive/capacitive
effect of Structure C is modeled as a series combination
of inductive and capacitive elements with inductance and
capacitance of j2C Ldt , CC 2t and j2C Ldb , CC 2b for the top
and bottom parts of the engineered structure, respectively. The
corresponding circuit model is shown in Fig. 5(b). The inductive
effect of Structure A is modeled as i2A Ldt and i2A Ldb for top
and bottom parts of the structure, whereas i2A Ldl and i2A Ldr
for left and right parts of the structure. The corresponding
circuit parameters are i2A Ldt = i2A Ldb = 1.06 nH, CB S 2t =
CB S 2b = 0.51 pF, K2B Lst = K2B Lsb = 0.57 nH, j2C Ldt =
j2C Ldb = 0.51 nH, CC 2t = CC 2b = 0.23 pF, i2A Ldl =
i2A Ldr = 0.39 nH, K2B Lsl = K2B Lsr = 0.48 nH, CB S 2l =
CB S 2r = 0.32 pF, and R = 4.7 Ω.
The circuit model of third absorption at 10.17 GHz is
similar to the second absorption, as shown in Fig. 5(c). Despite
similarity, unlike second absorption, the inductive effect at third
absorption is mostly contributed by left and right SRRs, whereas
a higher accumulation of charges results in a dominant capaci-
tive effect. The corresponding circuit parameters are i3A Ldt =
i3A Ldb = 1.28 nH, CB S 3t = CB S 3b = 10.56 pF, K3B Lst =
K3B Lsb = 1.00 nH, j3C Ldt = j3C Ldb = 0.63 nH, CC 3t =
CC 3b = 0.18 pF, i3A Ldl = i3A Ldr = 0.45 nH, K3B Lsl =
K3B Lsr = 0.42 nH, CB S 3l = CB S 3r = 0.4 pF, and R =
7.24 Ω. The circuit model at the highest frequency of 14.93 GHz,
as shown in Fig. 5(d), is also observed to be similar to the lowest
frequency of 3.68 GHz. It is important to note that despite
similarity in circuit model, the nature of inductive/capacitive
loading effect is significantly different. The surface current
distribution at 14.93 GHz is mostly concentrated in Structure
C along with upper and lower SRRs. It induces a dominant
inductive loading effect. Furthermore, the dense accumulation
SARKHEL AND BHADRA CHAUDHURI: COMPACT QUAD-BAND POLARIZATION-INSENSITIVE ULTRATHIN METAMATERIAL ABSORBER 3243

TABLE I
COMPARISON OF UNIT CELL PERIOD, THICKNESS, ANGULAR STABILITY
PERFORMANCE OF PROPOSED ABSORBER WITH SOME REFERRED
ULTRATHIN ABSORBERS

Absorber Unit cell size Thickness (mm) Angle stability (°)

[6] 0.184 λ .0153 λ 60

[7] 0.284 λ .0158 λ 60
[8] 0.183 λ .0183 λ X
[10] 0.169 λ .0126 λ 60
[11] 0.205 λ .0137 λ 45
[12] 0.289 λ .0115 λ 60
proposed 0.122 λ .0122 λ 60

X: Not mentioned, λ: Corresponding to the lowest frequency.

Fig. 6. Comparison between full wave and circuit model analysis of the pro-
posed absorber at their respective quad band of absorptions.

Fig. 8. (a) Enlarged view of fabricated sample. (b) Experimental verification

of quad-band absorption characteristics of the proposed absorber under oblique
incidence for TE polarization.

Fig. 7. Simulated absorption response of proposed absorber with different

angle of incidence. (a) TE polarization. (b) TM polarization.
of charges at the edges of Structure B along with upper
and lower SRRs also results in dominant capacitive loading
effect for 14.93 GHz. The corresponding circuit parameters
are i4A Ld = 0.15 nH, CB S 4 = 0.4 pF, K4B Ls = 0.47 nH,
j4C Ld = 3.15 nH, CC 4 = 1.68 pF, and R = 6.09 Ω. The cou-
pling coefficients are represented as 0 < in A < 1, 0 < jn C < 1,
and 0 < kn B < 1, where n = 1, 2, 3, 4 represents quadband
of absorption. The comparison between full-wave and circuit
model analyses is shown in Fig. 6.
The simulated absorption response of the proposed quad-
band absorber studied by varying different angle of incidence
(θ) for both TE and TM polarizations is shown in Fig. 7. It is
seen that for both the polarization states the absorption remains
above 90% up to an angle of 60◦ . The shift of absorption peak
with an increase in angle of incidence observed in TE mode at
14.93 GHz is due to the dependence of current path on angle
of incidence [10]. However, in the case of TM polarization, the
response of proposed absorber remains almost the same in all
four bands.
It is important to note that the fourfold symmetry of the pro-
posed engineered structure results in a polarization-insensitive
absorption. For the sake of brevity, the corresponding discussion
has not been included.
The proposed absorber has been compared in Table I with
previously published compact ultrathin multiband absorbers in
the literature. It is seen that proposed structure with quad-band
characteristics is the most compact structure when compared
with the existing triple and higher band of absorbers presented
in [6]–[8] and [10]–[12] with a relatively small thickness of
0.0122 λ0 and a wide angle stability of 60◦ .
III. EXPERIMENTAL VERIFICATION
A prototype of the proposed quad-band absorber composed
of finite-size array of 15 × 15 unit cells has been fabricated
by using standard printed circuit board technology. The metal
thickness and substrate specification of the fabricated sample
are the same as simulation. The fabricated sample is shown in
Fig. 8(a). The prototype has been measured by using free-space
method outlined in [11]. In the experimental setup to separately
measure the reflection response of a copper sheet and the fab-
ricated sample, a pair of standard horn antenna and microwave
network analyzer is used inside an anechoic chamber. The
normalization of the reflection coefficient of the sample with
that of the copper sheet results in actual reflection response of
the proposed absorber. The measured response of the absorber
under different angle of incidence for TE polarization state is
shown in Fig. 8(b). It shows the wide angle stability of the pro-
posed absorber. The corresponding measured response for TM
polarization state is not shown for the sake of brevity. A slight
shift in frequency observed between measured and simulated re-
sults is due to the finite size of the fabricated sample, fabrication
tolerances, and issue alignment of the measurement setup.
IV. CONCLUSION
In this letter, a compact, ultrathin, polarization-insensitive
metamaterial absorber with a quad band of absorption char-
acteristics has been introduced. Compared with earlier works
on multiband absorber, the proposed design is compact in con-
figuration with a considerably small unit cell size. Moreover,
the proposed design also has a relatively small thickness with
possible application in S-, X-, and Ku-bands.
3244
REFERENCES
[1] C. M. Soukoulis and M. Wegener, “Past achievements and future chal-
lenges in the development of three-dimensional photonic metamaterials,”
Nature Photon., vol. 5, pp. 523–530, Jul. 2011.
[2] S. Bhattacharyya, S. Ghosh, and K. V. Srivastava, “Triple band
polarization-independent metamaterial absorber with bandwidth enhance-
ment at X-band,” J. Appl. Phys., vol. 114, no. 9, Sep. 2013, Art. no. 094514.
[3] J. Chen, Z. Hu, S. Wang, X. Huang, and M. Liu, “A triple-band,
polarization- and incident angle-independent microwave metamaterial ab-
sorber with interference theory,” Eur. Phys. J. B, vol. 89, no. 1, pp. 1–9,
Jan. 2016.
[4] H. Jiang, Z. Xue, W. Li, and W. Ren, “Multiband polarisation insensi-
tive metamaterial absorber based on circular fractal structure,” Microw.,
Antennas Propag., vol. 10, no. 11, pp. 1141–1145, Aug. 2016.
[5] Z. X. Cao, F. G. Yuan, and L. H. Li, “A super-compact metamaterial
absorber cell in L-band,” J. Appl. Phys., vol. 115, no. 18, Apr. 2014, Art.
no. 184904.
[6] B. Bian et al., “Novel triple-band polarization-insensitive wide-angle
ultra-thin microwave metamaterial absorber,” J. Appl. Phys., vol 114,
no. 19, Nov. 2013, Art. no. 194511.
IEEE ANTENNAS AND WIRELESS PROPAGATION LETTERS, VOL. 16, 2017
[7] S. Bhattacharyya and K. V. Srivastava, “Triple band polarization-
independent ultra-thin metamaterial absorber using electric field-driven
LC resonator,” J. Appl. Phys., vol. 115, no. 6, Jan. 2014, Art. no. 064508.
[8] S. Bhattacharyyaa, S. Ghoshb, and K. V. Srivastava, “Equivalent circuit
model of an ultra-thin polarization-independent triple band metamaterial
absorber,” AIP Adv., vol. 4, no. 9, Sep. 2014, Art. no. 097127.
[9] M. R. Soheilifar and R. A. Sadeghzadeh, “Design, fabrication and char-
acterisation of scaled and stacked layers planar metamaterial absorber,”
Microw., Antennas Propag., vol. 9, no. 1, pp. 86–93, Jan. 2015.
[10] Z. Mao et al., “Multi-band polarization-insensitive metamaterial absorber
based on Chinese ancient coin-shaped structures,” J. Appl. Phys., vol. 115,
no. 20, May 2014, Art. no. 204505.
[11] D. Chaurasiya, S. Ghosh, S. Bhattacharyya, A. Bhattacharya, and
K. V. Srivastava, “Compact multi-band polarisation-insensitive metama-
terial absorber,” Microw., Antennas Propag., vol. 10, no. 1, pp. 94–101,
Jan. 2016.
[12] M. Agarwal, A. K. Behera, and M. K. Meshram, “Wide-angle quad-band
polarisation insensitive metamaterial absorber,” Electron. Lett., vol. 52,
no. 5, pp. 340–342, Mar. 2016.
[13] HFSS ver. 15, Ansoft Corporation, Pittsburgh, PA, USA, 2015.